SE9603587D0 - A device for epitaxially growing objects and method for such a growth - Google Patents

A device for epitaxially growing objects and method for such a growth

Info

Publication number
SE9603587D0
SE9603587D0 SE9603587A SE9603587A SE9603587D0 SE 9603587 D0 SE9603587 D0 SE 9603587D0 SE 9603587 A SE9603587 A SE 9603587A SE 9603587 A SE9603587 A SE 9603587A SE 9603587 D0 SE9603587 D0 SE 9603587D0
Authority
SE
Sweden
Prior art keywords
conduit
epitaxially growing
growth
room
substrate
Prior art date
Application number
SE9603587A
Other languages
English (en)
Inventor
Olle Kordina
Alex Ellison
Erik Janzen
Marko Tuominen
Chun-Yuan Gu
Original Assignee
Abb Research Ltd
Okmetic Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd, Okmetic Ltd filed Critical Abb Research Ltd
Priority to SE9603587A priority Critical patent/SE9603587D0/sv
Publication of SE9603587D0 publication Critical patent/SE9603587D0/sv
Priority to EP97944244A priority patent/EP0931186B1/en
Priority to DE69728681T priority patent/DE69728681T2/de
Priority to JP51643398A priority patent/JP4510151B2/ja
Priority to AT97944244T priority patent/ATE264413T1/de
Priority to PCT/SE1997/001612 priority patent/WO1998014643A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Polyesters Or Polycarbonates (AREA)
SE9603587A 1996-10-01 1996-10-01 A device for epitaxially growing objects and method for such a growth SE9603587D0 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE9603587A SE9603587D0 (sv) 1996-10-01 1996-10-01 A device for epitaxially growing objects and method for such a growth
EP97944244A EP0931186B1 (en) 1996-10-01 1997-09-25 A device for epitaxially growing objects and method for such a growth
DE69728681T DE69728681T2 (de) 1996-10-01 1997-09-25 Verfahren und Vorrichtung zur epiktaktischem Wachsen von Objekten
JP51643398A JP4510151B2 (ja) 1996-10-01 1997-09-25 目的物をエピタキシャル成長させるための装置およびそのような成長をさせるための方法
AT97944244T ATE264413T1 (de) 1996-10-01 1997-09-25 Verfahren und vorrichtung zur epitaktischem wachsen von objekten
PCT/SE1997/001612 WO1998014643A1 (en) 1996-10-01 1997-09-25 A device for epitaxially growing objects and method for such a growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9603587A SE9603587D0 (sv) 1996-10-01 1996-10-01 A device for epitaxially growing objects and method for such a growth

Publications (1)

Publication Number Publication Date
SE9603587D0 true SE9603587D0 (sv) 1996-10-01

Family

ID=20404095

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9603587A SE9603587D0 (sv) 1996-10-01 1996-10-01 A device for epitaxially growing objects and method for such a growth

Country Status (6)

Country Link
EP (1) EP0931186B1 (sv)
JP (1) JP4510151B2 (sv)
AT (1) ATE264413T1 (sv)
DE (1) DE69728681T2 (sv)
SE (1) SE9603587D0 (sv)
WO (1) WO1998014643A1 (sv)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9503428D0 (sv) † 1995-10-04 1995-10-04 Abb Research Ltd A method for epitaxially growing objects and a device for such a growth
JP2008034780A (ja) * 2006-07-07 2008-02-14 Fuji Electric Holdings Co Ltd エピタキシャルＳｉＣ膜付き半導体ＳｉＣ基板の製造方法およびそのエピタキシャルＳｉＣ成膜装置
JP4347325B2 (ja) * 2006-08-10 2009-10-21 信越化学工業株式会社 単結晶ＳｉＣ、その製造方法及び単結晶ＳｉＣの製造装置
JP4923881B2 (ja) 2006-09-06 2012-04-25 株式会社デンソー 炭化珪素製造装置
JP7306217B2 (ja) * 2019-10-23 2023-07-11 株式会社レゾナック 坩堝及びＳｉＣ単結晶成長装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4444812A (en) * 1980-07-28 1984-04-24 Monsanto Company Combination gas curtains for continuous chemical vapor deposition production of silicon bodies
JPH0637355B2 (ja) * 1985-07-08 1994-05-18 日本電気株式会社 炭化珪素単結晶膜の製造方法
JPS6237374A (ja) * 1985-08-08 1987-02-18 Sumitomo Electric Ind Ltd 気相成長装置
JPS62193242A (ja) * 1986-02-20 1987-08-25 Canon Inc 堆積膜形成法
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
JPH08148439A (ja) * 1994-11-15 1996-06-07 Nissin Electric Co Ltd 薄膜気相成長装置
SE9502288D0 (sv) * 1995-06-26 1995-06-26 Abb Research Ltd A device and a method for epitaxially growing objects by CVD

Also Published As

Publication number Publication date
EP0931186B1 (en) 2004-04-14
JP4510151B2 (ja) 2010-07-21
DE69728681D1 (de) 2004-05-19
ATE264413T1 (de) 2004-04-15
WO1998014643A1 (en) 1998-04-09
JP2001501161A (ja) 2001-01-30
EP0931186A1 (en) 1999-07-28
DE69728681T2 (de) 2005-04-14

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