SE9503426D0 - A device for heat treatment of objects and a method for producing a susceptor - Google Patents

A device for heat treatment of objects and a method for producing a susceptor

Info

Publication number
SE9503426D0
SE9503426D0 SE9503426A SE9503426A SE9503426D0 SE 9503426 D0 SE9503426 D0 SE 9503426D0 SE 9503426 A SE9503426 A SE 9503426A SE 9503426 A SE9503426 A SE 9503426A SE 9503426 D0 SE9503426 D0 SE 9503426D0
Authority
SE
Sweden
Prior art keywords
susceptor
wall
substrate
objects
heat treatment
Prior art date
Application number
SE9503426A
Other languages
English (en)
Inventor
Olle Kordina
Willy Hermansson
Marko Tuominen
Original Assignee
Abb Research Ltd
Okmetic Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd, Okmetic Ltd filed Critical Abb Research Ltd
Priority to SE9503426A priority Critical patent/SE9503426D0/sv
Publication of SE9503426D0 publication Critical patent/SE9503426D0/sv
Priority to US08/543,628 priority patent/US5879462A/en
Priority to AT96933696T priority patent/ATE203068T1/de
Priority to PCT/SE1996/001227 priority patent/WO1997013011A1/en
Priority to DE69613855T priority patent/DE69613855T2/de
Priority to JP51418997A priority patent/JP4744652B2/ja
Priority to EP96933696A priority patent/EP0865518B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE9503426A 1995-10-04 1995-10-04 A device for heat treatment of objects and a method for producing a susceptor SE9503426D0 (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE9503426A SE9503426D0 (sv) 1995-10-04 1995-10-04 A device for heat treatment of objects and a method for producing a susceptor
US08/543,628 US5879462A (en) 1995-10-04 1995-10-16 Device for heat treatment of objects and a method for producing a susceptor
AT96933696T ATE203068T1 (de) 1995-10-04 1996-10-01 Vorrichtung zum wärmebehandeln von objekten
PCT/SE1996/001227 WO1997013011A1 (en) 1995-10-04 1996-10-01 A device for heat treatment of objects and a method for producing a susceptor
DE69613855T DE69613855T2 (de) 1995-10-04 1996-10-01 Vorrichtung zum wärmebehandeln von objekten
JP51418997A JP4744652B2 (ja) 1995-10-04 1996-10-01 対象物の熱処理装置とサセプタの製造法
EP96933696A EP0865518B1 (en) 1995-10-04 1996-10-01 A device for heat treatment of objects

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9503426A SE9503426D0 (sv) 1995-10-04 1995-10-04 A device for heat treatment of objects and a method for producing a susceptor
US08/543,628 US5879462A (en) 1995-10-04 1995-10-16 Device for heat treatment of objects and a method for producing a susceptor

Publications (1)

Publication Number Publication Date
SE9503426D0 true SE9503426D0 (sv) 1995-10-04

Family

ID=26662388

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9503426A SE9503426D0 (sv) 1995-10-04 1995-10-04 A device for heat treatment of objects and a method for producing a susceptor

Country Status (4)

Country Link
US (1) US5879462A (sv)
EP (1) EP0865518B1 (sv)
SE (1) SE9503426D0 (sv)
WO (1) WO1997013011A1 (sv)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6217662B1 (en) * 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
US6063186A (en) 1997-12-17 2000-05-16 Cree, Inc. Growth of very uniform silicon carbide epitaxial layers
SE9801190D0 (sv) * 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
US6824611B1 (en) * 1999-10-08 2004-11-30 Cree, Inc. Method and apparatus for growing silicon carbide crystals
US6451112B1 (en) * 1999-10-15 2002-09-17 Denso Corporation Method and apparatus for fabricating high quality single crystal
DE10055033A1 (de) * 2000-11-07 2002-05-08 Aixtron Ag CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor
JP3864696B2 (ja) * 2000-11-10 2007-01-10 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
US6569250B2 (en) 2001-01-08 2003-05-27 Cree, Inc. Gas-driven rotation apparatus and method for forming silicon carbide layers
US6896738B2 (en) * 2001-10-30 2005-05-24 Cree, Inc. Induction heating devices and methods for controllably heating an article
US6797069B2 (en) * 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
US6797337B2 (en) * 2002-08-19 2004-09-28 Micron Technology, Inc. Method for delivering precursors
US7256375B2 (en) * 2002-08-30 2007-08-14 Asm International N.V. Susceptor plate for high temperature heat treatment
DE10243022A1 (de) * 2002-09-17 2004-03-25 Degussa Ag Abscheidung eines Feststoffs durch thermische Zersetzung einer gasförmigen Substanz in einem Becherreaktor
US7118781B1 (en) * 2003-04-16 2006-10-10 Cree, Inc. Methods for controlling formation of deposits in a deposition system and deposition methods including the same
ITMI20031196A1 (it) * 2003-06-13 2004-12-14 Lpe Spa Sistema per crescere cristalli di carburo di silicio
US7181132B2 (en) 2003-08-20 2007-02-20 Asm International N.V. Method and system for loading substrate supports into a substrate holder
US7052546B1 (en) 2003-08-28 2006-05-30 Cape Simulations, Inc. High-purity crystal growth
DE10341020B4 (de) * 2003-09-03 2005-12-08 Eads Deutschland Gmbh Verfahren zum Innenbeschichten von Hohlkörpern
US7365289B2 (en) * 2004-05-18 2008-04-29 The United States Of America As Represented By The Department Of Health And Human Services Production of nanostructures by curie point induction heating
US20060065634A1 (en) * 2004-09-17 2006-03-30 Van Den Berg Jannes R Low temperature susceptor cleaning
US20060060145A1 (en) * 2004-09-17 2006-03-23 Van Den Berg Jannes R Susceptor with surface roughness for high temperature substrate processing
US7732739B2 (en) 2004-10-19 2010-06-08 Canon Anelva Corporation Substrate heat treatment apparatus and substrate transfer tray used in substrate heat treatment
DE102004062553A1 (de) * 2004-12-24 2006-07-06 Aixtron Ag CVD-Reaktor mit RF-geheizter Prozesskammer
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
EP2501838B1 (en) 2009-11-18 2017-01-25 REC Silicon Inc. Fluid bed reactor
US10407769B2 (en) * 2016-03-18 2019-09-10 Goodrich Corporation Method and apparatus for decreasing the radial temperature gradient in CVI/CVD furnaces
DE102018108291A1 (de) * 2018-04-09 2019-10-10 Eisenmann Se Ofen
IT201900022047A1 (it) * 2019-11-25 2021-05-25 Lpe Spa Dispositivo di supporto substrati per una camera di reazione di un reattore epitassiale con rotazione a flusso di gas, camera di reazione e reattore epitassiale

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE570290C (de) * 1933-02-14 Hirsch Induktionsofen
US3125416A (en) * 1964-03-17 Method for producing high purity monocrystalline
DE496462C (de) * 1927-04-21 1930-04-25 Hirsch Elektrischer Induktionsofen zum Schmelzen oder zur Behandlung von Stoffen in Waerme
FR899255A (fr) * 1943-07-07 1945-05-25 Procédé de chauffage par induction
US2743306A (en) * 1953-08-12 1956-04-24 Carborundum Co Induction furnace
US2901381A (en) * 1956-10-12 1959-08-25 Bell Telephone Labor Inc Method of making electrical resistors
NL238194A (sv) * 1958-05-29
US3343920A (en) * 1966-01-11 1967-09-26 Norton Co Furnace for making silicon carbide crystals
JPS605683B2 (ja) * 1979-08-21 1985-02-13 東邦レーヨン株式会社 黒鉛繊維の製造装置
US4263872A (en) * 1980-01-31 1981-04-28 Rca Corporation Radiation heated reactor for chemical vapor deposition on substrates
DE3230727C2 (de) * 1982-08-18 1987-02-19 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von Einkristallen aus Siliziumkarbid SiC
KR910002578B1 (ko) * 1988-01-19 1991-04-27 닙폰 가이시 카부시키카이샤 고밀도 SiC 소결체의 제조방법
US5433167A (en) * 1992-02-04 1995-07-18 Sharp Kabushiki Kaisha Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
US5441011A (en) * 1993-03-16 1995-08-15 Nippon Steel Corporation Sublimation growth of single crystal SiC
SE9502288D0 (sv) * 1995-06-26 1995-06-26 Abb Research Ltd A device and a method for epitaxially growing objects by CVD

Also Published As

Publication number Publication date
US5879462A (en) 1999-03-09
EP0865518A1 (en) 1998-09-23
EP0865518B1 (en) 2001-07-11
WO1997013011A1 (en) 1997-04-10

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