BR8304635A - Dispositivo e processo de deposicao de vapor quimico - Google Patents

Dispositivo e processo de deposicao de vapor quimico

Info

Publication number
BR8304635A
BR8304635A BR8304635A BR8304635A BR8304635A BR 8304635 A BR8304635 A BR 8304635A BR 8304635 A BR8304635 A BR 8304635A BR 8304635 A BR8304635 A BR 8304635A BR 8304635 A BR8304635 A BR 8304635A
Authority
BR
Brazil
Prior art keywords
reaction chamber
steam device
vacuum chamber
chemical steam
chamber
Prior art date
Application number
BR8304635A
Other languages
English (en)
Inventor
Bryant A Campbell
Nicholas E Miller
Original Assignee
Anicon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anicon Inc filed Critical Anicon Inc
Publication of BR8304635A publication Critical patent/BR8304635A/pt

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/80Material per se process of making same
    • Y10S505/815Process of making per se
    • Y10S505/818Coating
    • Y10S505/819Vapor deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/825Apparatus per se, device per se, or process of making or operating same
    • Y10S505/826Coating
BR8304635A 1982-08-27 1983-08-26 Dispositivo e processo de deposicao de vapor quimico BR8304635A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/412,237 US4545327A (en) 1982-08-27 1982-08-27 Chemical vapor deposition apparatus

Publications (1)

Publication Number Publication Date
BR8304635A true BR8304635A (pt) 1984-04-10

Family

ID=23632185

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8304635A BR8304635A (pt) 1982-08-27 1983-08-26 Dispositivo e processo de deposicao de vapor quimico

Country Status (17)

Country Link
US (1) US4545327A (pt)
EP (1) EP0104764B1 (pt)
JP (1) JPS5959878A (pt)
KR (1) KR880000472B1 (pt)
AT (1) ATE47894T1 (pt)
AU (1) AU538152B2 (pt)
BR (1) BR8304635A (pt)
CA (1) CA1196777A (pt)
DE (1) DE3380823D1 (pt)
DK (1) DK383683A (pt)
ES (2) ES8600086A1 (pt)
IL (1) IL69170A (pt)
IN (1) IN159736B (pt)
NO (1) NO832366L (pt)
PT (1) PT77245B (pt)
YU (1) YU175883A (pt)
ZA (1) ZA835184B (pt)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097622A (ja) * 1983-11-01 1985-05-31 Toshiba Mach Co Ltd エピタキシヤル装置
US4539933A (en) * 1983-08-31 1985-09-10 Anicon, Inc. Chemical vapor deposition apparatus
DE3502592A1 (de) * 1985-01-26 1986-07-31 Rotring-Werke Riepe Kg, 2000 Hamburg Roehrchenschreibgeraet
CA1251100A (en) * 1985-05-17 1989-03-14 Richard Cloutier Chemical vapor deposition
FR2589168B1 (fr) * 1985-10-25 1992-07-17 Solems Sa Appareil et son procede d'utilisation pour la formation de films minces assistee par plasma
DE3539981C1 (de) * 1985-11-11 1987-06-11 Telog Systems Gmbh Verfahren und Vorrichtung zur Behandlung von Halbleitermaterialien
US4965515A (en) * 1986-10-15 1990-10-23 Tokyo Electron Limited Apparatus and method of testing a semiconductor wafer
DE8704734U1 (pt) * 1987-03-31 1987-05-14 Plasma-Electronic Gmbh + Co, 7024 Filderstadt, De
US4975561A (en) * 1987-06-18 1990-12-04 Epsilon Technology Inc. Heating system for substrates
FR2618799B1 (fr) * 1987-07-27 1989-12-29 Inst Nat Rech Chimique Reacteur de depot en phase vapeur
EP0307608B1 (de) * 1987-09-16 1992-05-13 Siemens Aktiengesellschaft Anordnung zur Durchführung eines Ausheilprozesses an einer Halbleiterscheibe und Verfahren zum Ausheilen einer Halbleiterscheibe
US5169478A (en) * 1987-10-08 1992-12-08 Friendtech Laboratory, Ltd. Apparatus for manufacturing semiconductor devices
US4854266A (en) * 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
KR890008922A (ko) * 1987-11-21 1989-07-13 후세 노보루 열처리 장치
US4914276A (en) * 1988-05-12 1990-04-03 Princeton Scientific Enterprises, Inc. Efficient high temperature radiant furnace
KR0155545B1 (ko) * 1988-06-27 1998-12-01 고다까 토시오 기판의 열처리 장치
KR0152260B1 (ko) * 1988-07-08 1998-12-15 고다까 토시오 프로우브 장치
US4931306A (en) * 1988-11-25 1990-06-05 Vapor Technologies Inc. High penetration deposition process and apparatus
US5059770A (en) * 1989-09-19 1991-10-22 Watkins-Johnson Company Multi-zone planar heater assembly and method of operation
US5108792A (en) * 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
US5071670A (en) * 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
US5179677A (en) * 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity
US5085887A (en) * 1990-09-07 1992-02-04 Applied Materials, Inc. Wafer reactor vessel window with pressure-thermal compensation
US5320680A (en) * 1991-04-25 1994-06-14 Silicon Valley Group, Inc. Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow
US5461214A (en) * 1992-06-15 1995-10-24 Thermtec, Inc. High performance horizontal diffusion furnace system
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
AU8011394A (en) * 1993-10-13 1995-05-04 Materials Research Corporation Vacuum seal of heating window to housing in wafer heat processing machine
US5575856A (en) * 1994-05-11 1996-11-19 Sony Corporation Thermal cycle resistant seal and method of sealing for use with semiconductor wafer processing apparatus
US6093252A (en) * 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
WO1997008356A2 (en) * 1995-08-18 1997-03-06 The Regents Of The University Of California Modified metalorganic chemical vapor deposition of group iii-v thin layers
US5782980A (en) * 1996-05-14 1998-07-21 Advanced Micro Devices, Inc. Low pressure chemical vapor deposition apparatus including a process gas heating subsystem
US6024393A (en) 1996-11-04 2000-02-15 Applied Materials, Inc. Robot blade for handling of semiconductor substrate
US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US6780464B2 (en) * 1997-08-11 2004-08-24 Torrex Equipment Thermal gradient enhanced CVD deposition at low pressure
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
US6383330B1 (en) 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
WO2002049395A2 (en) * 2000-12-12 2002-06-20 Tokyo Electron Limited Rapid thermal processing lamp and method for manufacturing the same
US7378127B2 (en) * 2001-03-13 2008-05-27 Micron Technology, Inc. Chemical vapor deposition methods
TW564498B (en) * 2001-08-20 2003-12-01 Asml Us Inc Apparatus and method for insulating a seal in a process chamber
KR100431657B1 (ko) * 2001-09-25 2004-05-17 삼성전자주식회사 웨이퍼의 처리 방법 및 처리 장치, 그리고 웨이퍼의 식각방법 및 식각 장치
US7390366B2 (en) * 2001-11-05 2008-06-24 Jusung Engineering Co., Ltd. Apparatus for chemical vapor deposition
JP3984820B2 (ja) * 2001-11-16 2007-10-03 株式会社神戸製鋼所 縦型減圧cvd装置
KR100453014B1 (ko) * 2001-12-26 2004-10-14 주성엔지니어링(주) Cvd 장치
JP2003213421A (ja) * 2002-01-21 2003-07-30 Hitachi Kokusai Electric Inc 基板処理装置
US7229666B2 (en) * 2002-01-22 2007-06-12 Micron Technology, Inc. Chemical vapor deposition method
US6787185B2 (en) * 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
JP4157718B2 (ja) * 2002-04-22 2008-10-01 キヤノンアネルバ株式会社 窒化シリコン膜作製方法及び窒化シリコン膜作製装置
US7468104B2 (en) * 2002-05-17 2008-12-23 Micron Technology, Inc. Chemical vapor deposition apparatus and deposition method
US6887521B2 (en) * 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
US6946033B2 (en) * 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
US20040052969A1 (en) * 2002-09-16 2004-03-18 Applied Materials, Inc. Methods for operating a chemical vapor deposition chamber using a heated gas distribution plate
KR100481874B1 (ko) * 2003-02-05 2005-04-11 삼성전자주식회사 집적회로 제조에 사용되는 확산로 및 확산로의 냉각방법
DE10320597A1 (de) * 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
US20040244949A1 (en) * 2003-05-30 2004-12-09 Tokyo Electron Limited Temperature controlled shield ring
US20050098107A1 (en) * 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
US7169233B2 (en) 2003-11-21 2007-01-30 Asm America, Inc. Reactor chamber
US7615061B2 (en) 2006-02-28 2009-11-10 Arthrocare Corporation Bone anchor suture-loading system, method and apparatus
BRPI0806833A2 (pt) 2007-02-01 2014-05-13 Willard & Kelsey Solar Group Llc Sistema e método para revestir material semicondutor em lâminas de vidro, e, lâmina de vidro revestida de semicondutor.
US20090191031A1 (en) * 2008-01-28 2009-07-30 Willard & Kelsey Solar Group, Llc System and method for cooling semiconductor coated hot glass sheets
US9169554B2 (en) * 2008-05-30 2015-10-27 Alta Devices, Inc. Wafer carrier track
JP5043776B2 (ja) * 2008-08-08 2012-10-10 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
CN102422394B (zh) 2009-03-16 2015-10-14 奥塔装置公司 用于气相沉积的反应器盖子组件
US8338210B2 (en) 2010-06-14 2012-12-25 Asm International N.V. Method for processing solar cell substrates
JP5541274B2 (ja) * 2011-12-28 2014-07-09 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
US20130196053A1 (en) * 2012-01-10 2013-08-01 State of Oregon acting by and through the State Board of Higher Education on behalf of Oregon Stat Flow cell design for uniform residence time fluid flow
US10100409B2 (en) 2015-02-11 2018-10-16 United Technologies Corporation Isothermal warm wall CVD reactor
DE102015220127A1 (de) * 2015-10-15 2017-04-20 Wacker Chemie Ag Vorrichtung zur Isolierung und Abdichtung von Elektrodenhalterungen in CVD Reaktoren

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1245334B (de) * 1962-08-30 1967-07-27 Siemens Ag Vorrichtung zur Herstellung von Halbleitereinkristallen durch Abscheiden aus der Gasphase
DE1244733B (de) * 1963-11-05 1967-07-20 Siemens Ag Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern
US3456616A (en) * 1968-05-08 1969-07-22 Texas Instruments Inc Vapor deposition apparatus including orbital substrate support
DE1929422B2 (de) * 1969-06-10 1974-08-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial
GB1331912A (en) * 1971-03-12 1973-09-26 Unisearch Ltd Furnaces for production of planar transistors and integrated circuits
FR2134220A1 (fr) * 1971-04-27 1972-12-08 Snecma Procede en phase vapeur pour le recouvrement de surfaces au moyen de derives du titane
US3830194A (en) * 1972-09-28 1974-08-20 Applied Materials Tech Susceptor support structure and docking assembly
DE2359004C3 (de) * 1972-11-29 1983-05-19 Applied Materials, Inc., 95051 Santa Clara, Calif. Vorrichtung zur Erwärmung von aus einkristallinem Material bestehenden Substraten
US3913738A (en) * 1973-05-03 1975-10-21 Illinois Tool Works Multi container package and carrier
US4098923A (en) * 1976-06-07 1978-07-04 Motorola, Inc. Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat
JPS5337186A (en) * 1976-09-17 1978-04-06 Hitachi Ltd Chemical gas phase accumulating method
JPS5821025B2 (ja) * 1976-10-20 1983-04-26 松下電器産業株式会社 気相化学蒸着装置
US4348580A (en) * 1980-05-07 1982-09-07 Tylan Corporation Energy efficient furnace with movable end wall
US4309240A (en) * 1980-05-16 1982-01-05 Advanced Crystal Sciences, Inc. Process for chemical vapor deposition of films on silicon wafers
GB2089840B (en) * 1980-12-20 1983-12-14 Cambridge Instr Ltd Chemical vapour deposition apparatus incorporating radiant heat source for substrate

Also Published As

Publication number Publication date
YU175883A (en) 1986-04-30
JPS6256232B2 (pt) 1987-11-25
KR840005751A (ko) 1984-11-15
ES540894A0 (es) 1986-06-01
ZA835184B (en) 1984-03-28
ES525174A0 (es) 1985-10-01
ES8607761A1 (es) 1986-06-01
EP0104764B1 (en) 1989-11-08
DK383683D0 (da) 1983-08-22
CA1196777A (en) 1985-11-19
PT77245A (en) 1983-09-01
IL69170A0 (en) 1983-11-30
NO832366L (no) 1984-02-28
US4545327A (en) 1985-10-08
ATE47894T1 (de) 1989-11-15
KR880000472B1 (ko) 1988-04-07
EP0104764A2 (en) 1984-04-04
DE3380823D1 (en) 1989-12-14
IL69170A (en) 1987-03-31
EP0104764A3 (en) 1984-05-16
JPS5959878A (ja) 1984-04-05
AU538152B2 (en) 1984-08-02
DK383683A (da) 1984-02-28
ES8600086A1 (es) 1985-10-01
IN159736B (pt) 1987-06-06
PT77245B (en) 1986-02-12
AU1848083A (en) 1984-03-01

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