IL69170A - Chemical vapor deposition apparatus - Google Patents

Chemical vapor deposition apparatus

Info

Publication number
IL69170A
IL69170A IL69170A IL6917083A IL69170A IL 69170 A IL69170 A IL 69170A IL 69170 A IL69170 A IL 69170A IL 6917083 A IL6917083 A IL 6917083A IL 69170 A IL69170 A IL 69170A
Authority
IL
Israel
Prior art keywords
chemical vapor
vapor deposition
reaction chamber
deposition apparatus
vacuum chamber
Prior art date
Application number
IL69170A
Other languages
English (en)
Other versions
IL69170A0 (en
Original Assignee
Anicon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anicon Inc filed Critical Anicon Inc
Priority to IL8007983A priority Critical patent/IL80079A/xx
Publication of IL69170A0 publication Critical patent/IL69170A0/xx
Priority to IL80079A priority patent/IL80079A0/xx
Publication of IL69170A publication Critical patent/IL69170A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/818—Coating
    • Y10S505/819—Vapor deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/826—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Infusion, Injection, And Reservoir Apparatuses (AREA)
  • Surgical Instruments (AREA)
  • Die Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
IL69170A 1982-08-27 1983-07-06 Chemical vapor deposition apparatus IL69170A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IL8007983A IL80079A (en) 1982-08-27 1983-07-06 Chemical vapor deposition process
IL80079A IL80079A0 (en) 1982-08-27 1986-09-18 Chemical vapor deposition process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/412,237 US4545327A (en) 1982-08-27 1982-08-27 Chemical vapor deposition apparatus

Publications (2)

Publication Number Publication Date
IL69170A0 IL69170A0 (en) 1983-11-30
IL69170A true IL69170A (en) 1987-03-31

Family

ID=23632185

Family Applications (1)

Application Number Title Priority Date Filing Date
IL69170A IL69170A (en) 1982-08-27 1983-07-06 Chemical vapor deposition apparatus

Country Status (17)

Country Link
US (1) US4545327A (xx)
EP (1) EP0104764B1 (xx)
JP (1) JPS5959878A (xx)
KR (1) KR880000472B1 (xx)
AT (1) ATE47894T1 (xx)
AU (1) AU538152B2 (xx)
BR (1) BR8304635A (xx)
CA (1) CA1196777A (xx)
DE (1) DE3380823D1 (xx)
DK (1) DK383683A (xx)
ES (2) ES525174A0 (xx)
IL (1) IL69170A (xx)
IN (1) IN159736B (xx)
NO (1) NO832366L (xx)
PT (1) PT77245B (xx)
YU (1) YU175883A (xx)
ZA (1) ZA835184B (xx)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097622A (ja) * 1983-11-01 1985-05-31 Toshiba Mach Co Ltd エピタキシヤル装置
US4539933A (en) * 1983-08-31 1985-09-10 Anicon, Inc. Chemical vapor deposition apparatus
DE3502592A1 (de) * 1985-01-26 1986-07-31 Rotring-Werke Riepe Kg, 2000 Hamburg Roehrchenschreibgeraet
CA1251100A (en) * 1985-05-17 1989-03-14 Richard Cloutier Chemical vapor deposition
FR2589168B1 (fr) * 1985-10-25 1992-07-17 Solems Sa Appareil et son procede d'utilisation pour la formation de films minces assistee par plasma
DE3539981C1 (de) * 1985-11-11 1987-06-11 Telog Systems Gmbh Verfahren und Vorrichtung zur Behandlung von Halbleitermaterialien
US4965515A (en) * 1986-10-15 1990-10-23 Tokyo Electron Limited Apparatus and method of testing a semiconductor wafer
DE8704734U1 (xx) * 1987-03-31 1987-05-14 Plasma-Electronic Gmbh + Co, 7024 Filderstadt, De
US4975561A (en) * 1987-06-18 1990-12-04 Epsilon Technology Inc. Heating system for substrates
FR2618799B1 (fr) * 1987-07-27 1989-12-29 Inst Nat Rech Chimique Reacteur de depot en phase vapeur
EP0307608B1 (de) * 1987-09-16 1992-05-13 Siemens Aktiengesellschaft Anordnung zur Durchführung eines Ausheilprozesses an einer Halbleiterscheibe und Verfahren zum Ausheilen einer Halbleiterscheibe
US5169478A (en) * 1987-10-08 1992-12-08 Friendtech Laboratory, Ltd. Apparatus for manufacturing semiconductor devices
US4854266A (en) * 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
KR890008922A (ko) * 1987-11-21 1989-07-13 후세 노보루 열처리 장치
US4914276A (en) * 1988-05-12 1990-04-03 Princeton Scientific Enterprises, Inc. Efficient high temperature radiant furnace
KR0155545B1 (ko) * 1988-06-27 1998-12-01 고다까 토시오 기판의 열처리 장치
KR0152260B1 (ko) * 1988-07-08 1998-12-15 고다까 토시오 프로우브 장치
US4931306A (en) * 1988-11-25 1990-06-05 Vapor Technologies Inc. High penetration deposition process and apparatus
US5059770A (en) * 1989-09-19 1991-10-22 Watkins-Johnson Company Multi-zone planar heater assembly and method of operation
US5108792A (en) * 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
US5071670A (en) * 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
US5179677A (en) * 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity
US5085887A (en) * 1990-09-07 1992-02-04 Applied Materials, Inc. Wafer reactor vessel window with pressure-thermal compensation
US5320680A (en) * 1991-04-25 1994-06-14 Silicon Valley Group, Inc. Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow
US5461214A (en) * 1992-06-15 1995-10-24 Thermtec, Inc. High performance horizontal diffusion furnace system
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
WO1995010639A1 (en) * 1993-10-13 1995-04-20 Materials Research Corporation Vacuum seal of heating window to housing in wafer heat processing machine
US5575856A (en) * 1994-05-11 1996-11-19 Sony Corporation Thermal cycle resistant seal and method of sealing for use with semiconductor wafer processing apparatus
US6093252A (en) 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
WO1997008356A2 (en) * 1995-08-18 1997-03-06 The Regents Of The University Of California Modified metalorganic chemical vapor deposition of group iii-v thin layers
US5782980A (en) * 1996-05-14 1998-07-21 Advanced Micro Devices, Inc. Low pressure chemical vapor deposition apparatus including a process gas heating subsystem
US6024393A (en) 1996-11-04 2000-02-15 Applied Materials, Inc. Robot blade for handling of semiconductor substrate
US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US6780464B2 (en) * 1997-08-11 2004-08-24 Torrex Equipment Thermal gradient enhanced CVD deposition at low pressure
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
US6383330B1 (en) 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
WO2002049395A2 (en) * 2000-12-12 2002-06-20 Tokyo Electron Limited Rapid thermal processing lamp and method for manufacturing the same
US7378127B2 (en) * 2001-03-13 2008-05-27 Micron Technology, Inc. Chemical vapor deposition methods
TW564498B (en) * 2001-08-20 2003-12-01 Asml Us Inc Apparatus and method for insulating a seal in a process chamber
KR100431657B1 (ko) * 2001-09-25 2004-05-17 삼성전자주식회사 웨이퍼의 처리 방법 및 처리 장치, 그리고 웨이퍼의 식각방법 및 식각 장치
US7390366B2 (en) * 2001-11-05 2008-06-24 Jusung Engineering Co., Ltd. Apparatus for chemical vapor deposition
JP3984820B2 (ja) * 2001-11-16 2007-10-03 株式会社神戸製鋼所 縦型減圧ｃｖｄ装置
KR100453014B1 (ko) * 2001-12-26 2004-10-14 주성엔지니어링(주) Ｃｖｄ 장치
JP2003213421A (ja) * 2002-01-21 2003-07-30 Hitachi Kokusai Electric Inc 基板処理装置
US7229666B2 (en) * 2002-01-22 2007-06-12 Micron Technology, Inc. Chemical vapor deposition method
US6787185B2 (en) * 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
JP4157718B2 (ja) * 2002-04-22 2008-10-01 キヤノンアネルバ株式会社 窒化シリコン膜作製方法及び窒化シリコン膜作製装置
US7468104B2 (en) * 2002-05-17 2008-12-23 Micron Technology, Inc. Chemical vapor deposition apparatus and deposition method
US6887521B2 (en) * 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
US20040052969A1 (en) * 2002-09-16 2004-03-18 Applied Materials, Inc. Methods for operating a chemical vapor deposition chamber using a heated gas distribution plate
US6946033B2 (en) * 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
KR100481874B1 (ko) * 2003-02-05 2005-04-11 삼성전자주식회사 집적회로 제조에 사용되는 확산로 및 확산로의 냉각방법
DE10320597A1 (de) * 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
US20040244949A1 (en) * 2003-05-30 2004-12-09 Tokyo Electron Limited Temperature controlled shield ring
US20050098107A1 (en) * 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
US7169233B2 (en) 2003-11-21 2007-01-30 Asm America, Inc. Reactor chamber
US7615061B2 (en) 2006-02-28 2009-11-10 Arthrocare Corporation Bone anchor suture-loading system, method and apparatus
KR20090110863A (ko) * 2007-02-01 2009-10-22 윌라드 앤드 켈시 솔라 그룹, 엘엘씨 유리 시트 반도체 코팅을 위한 시스템과 방법
US20090191031A1 (en) * 2008-01-28 2009-07-30 Willard & Kelsey Solar Group, Llc System and method for cooling semiconductor coated hot glass sheets
US9169554B2 (en) * 2008-05-30 2015-10-27 Alta Devices, Inc. Wafer carrier track
JP5043776B2 (ja) * 2008-08-08 2012-10-10 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP2012521094A (ja) 2009-03-16 2012-09-10 アルタ デバイセズ，インコーポレイテッド ウエハキャリアトラック
US8338210B2 (en) 2010-06-14 2012-12-25 Asm International N.V. Method for processing solar cell substrates
JP5541274B2 (ja) * 2011-12-28 2014-07-09 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
US20130196053A1 (en) * 2012-01-10 2013-08-01 State of Oregon acting by and through the State Board of Higher Education on behalf of Oregon Stat Flow cell design for uniform residence time fluid flow
US10100409B2 (en) 2015-02-11 2018-10-16 United Technologies Corporation Isothermal warm wall CVD reactor
DE102015220127A1 (de) * 2015-10-15 2017-04-20 Wacker Chemie Ag Vorrichtung zur Isolierung und Abdichtung von Elektrodenhalterungen in CVD Reaktoren

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1245334B (de) * 1962-08-30 1967-07-27 Siemens Ag Vorrichtung zur Herstellung von Halbleitereinkristallen durch Abscheiden aus der Gasphase
DE1244733B (de) * 1963-11-05 1967-07-20 Siemens Ag Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern
US3456616A (en) * 1968-05-08 1969-07-22 Texas Instruments Inc Vapor deposition apparatus including orbital substrate support
DE1929422B2 (de) * 1969-06-10 1974-08-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial
GB1331912A (en) * 1971-03-12 1973-09-26 Unisearch Ltd Furnaces for production of planar transistors and integrated circuits
FR2134220A1 (fr) * 1971-04-27 1972-12-08 Snecma Procede en phase vapeur pour le recouvrement de surfaces au moyen de derives du titane
US3830194A (en) * 1972-09-28 1974-08-20 Applied Materials Tech Susceptor support structure and docking assembly
GB1452076A (en) * 1972-11-29 1976-10-06 Applied Materials Inc Process and apparatus for preparing semiconductor wafers without crystallographic slip
US3913738A (en) * 1973-05-03 1975-10-21 Illinois Tool Works Multi container package and carrier
US4098923A (en) * 1976-06-07 1978-07-04 Motorola, Inc. Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat
JPS5337186A (en) * 1976-09-17 1978-04-06 Hitachi Ltd Chemical gas phase accumulating method
JPS5821025B2 (ja) * 1976-10-20 1983-04-26 松下電器産業株式会社 気相化学蒸着装置
US4348580A (en) * 1980-05-07 1982-09-07 Tylan Corporation Energy efficient furnace with movable end wall
US4309240A (en) * 1980-05-16 1982-01-05 Advanced Crystal Sciences, Inc. Process for chemical vapor deposition of films on silicon wafers
GB2089840B (en) * 1980-12-20 1983-12-14 Cambridge Instr Ltd Chemical vapour deposition apparatus incorporating radiant heat source for substrate

Also Published As

Publication number Publication date
ES8607761A1 (es) 1986-06-01
DE3380823D1 (en) 1989-12-14
ES540894A0 (es) 1986-06-01
BR8304635A (pt) 1984-04-10
KR840005751A (ko) 1984-11-15
ES8600086A1 (es) 1985-10-01
AU1848083A (en) 1984-03-01
US4545327A (en) 1985-10-08
PT77245A (en) 1983-09-01
DK383683D0 (da) 1983-08-22
EP0104764A2 (en) 1984-04-04
KR880000472B1 (ko) 1988-04-07
ZA835184B (en) 1984-03-28
EP0104764A3 (en) 1984-05-16
ES525174A0 (es) 1985-10-01
JPS5959878A (ja) 1984-04-05
PT77245B (en) 1986-02-12
DK383683A (da) 1984-02-28
JPS6256232B2 (xx) 1987-11-25
EP0104764B1 (en) 1989-11-08
CA1196777A (en) 1985-11-19
AU538152B2 (en) 1984-08-02
ATE47894T1 (de) 1989-11-15
NO832366L (no) 1984-02-28
IN159736B (xx) 1987-06-06
IL69170A0 (en) 1983-11-30
YU175883A (en) 1986-04-30

Similar Documents

Publication Publication Date Title
IL69170A (en) Chemical vapor deposition apparatus
SG45405A1 (en) Gas feeding device and deposition film forming apparatus employing the same
TW366514B (en) Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment
KR920700468A (ko) 기판상의 층 용착 방법 및 그 처리 시스템
PT79138A (en) Chemical vapor deposition apparatus
KR920003424A (ko) 표면처리 장치, 표면처리방법 및 반도체장치의 제조방법
ZA913797B (en) Process for improved preparation of treatment gas in heat treatments
ES8203144A1 (es) Perfeccionamientos introducidos en un elemento de caldeo, enparticular para botes de conservas
US5283414A (en) Plasma treatment apparatus
TW358224B (en) Chemical vapor deposition apparatus
JPS5467377A (en) Plasma processing apparatus
JPS5575945A (en) Optical fiber coating method
JPS6473078A (en) C.v.d. device
JPS5713738A (en) Vapor-phase growing apparatus
JPS5796535A (en) Cvd device
JPS5717495A (en) Growing apparatus for single crystal
JPS55160424A (en) Vapor phase epitaxial device
SU1046344A1 (ru) Устройство дл нанесени покрытий
JPS57152126A (en) Cvd device under normal-pressure
JPS5694748A (en) Manufacturing method of semiconductor device
JPS6430212A (en) Substrate conveying tray for organic metal chemical vapor growth device
JPS5687324A (en) Plasma reaction device
GB1026817A (en) Process of forming pyrographite
JPS53116775A (en) Vapor phase growth apparatus of semiconductor crystals
TH2075A (th) เครื่องเคลือบสารที่ได้จากปฏิกิริยาเคมีของไอสาร

Legal Events

Date Code Title Description
KB Patent renewed
KB20 Patent renewed for 20 years
EXP Patent expired