TW358224B - Chemical vapor deposition apparatus - Google Patents

Chemical vapor deposition apparatus

Info

Publication number
TW358224B
TW358224B TW086113166A TW86113166A TW358224B TW 358224 B TW358224 B TW 358224B TW 086113166 A TW086113166 A TW 086113166A TW 86113166 A TW86113166 A TW 86113166A TW 358224 B TW358224 B TW 358224B
Authority
TW
Taiwan
Prior art keywords
chamber
vapor deposition
chemical vapor
deposition apparatus
sensor
Prior art date
Application number
TW086113166A
Other languages
Chinese (zh)
Inventor
Seung-Hee Nam
Young-Sun Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW358224B publication Critical patent/TW358224B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Abstract

A sort of chemical vapor deposition apparatus, including: an airtight chamber for reaction of reaction gases; a sensor installed on the bottom of the chamber, having wafers on it; a heater surrounding the sensor for controlling the temperature inside the chamber; a gas injector tube, protruding from the bottom of the chamber in a predetermined length and disposed between the heater and the sensor; and a gas escape for unloading the reaction gas from the chamber, being connected to a predetermined area in the bottom.
TW086113166A 1996-09-14 1997-09-11 Chemical vapor deposition apparatus TW358224B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960039995A KR19980021208A (en) 1996-09-14 1996-09-14 Chemical vapor deposition equipment

Publications (1)

Publication Number Publication Date
TW358224B true TW358224B (en) 1999-05-11

Family

ID=19473822

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086113166A TW358224B (en) 1996-09-14 1997-09-11 Chemical vapor deposition apparatus

Country Status (3)

Country Link
JP (1) JPH10102256A (en)
KR (1) KR19980021208A (en)
TW (1) TW358224B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6305314B1 (en) * 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6503330B1 (en) 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6551399B1 (en) 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
KR20010078621A (en) * 2000-02-09 2001-08-21 황 철 주 Apparatus for chemical vapor deposition
US6617173B1 (en) 2000-10-11 2003-09-09 Genus, Inc. Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition
KR100730065B1 (en) * 2000-12-20 2007-06-20 엘지.필립스 엘시디 주식회사 Chemical Enhanced Vapor Deposition Device

Also Published As

Publication number Publication date
JPH10102256A (en) 1998-04-21
KR19980021208A (en) 1998-06-25

Similar Documents

Publication Publication Date Title
TW340138B (en) Apparatus for low pressure chemical vapor deposition the invention relates to an apparatus for low pressure chemical vapor deposition
TW275132B (en) Treatment apparatus
EP0176295A3 (en) Eliminating unwanted material from a gas flow line
EP0393809A3 (en) Pressure resistant thermal reactor system for semiconductor processing
TW332304B (en) Improved gas diffuser plate assembly and RF electrode
AU2003216719A1 (en) Method and installation for the densification of substrates by means of chemical vapour infiltration
ES2000147A6 (en) Exhaust system for motor vehicles or the like.
IL129580A0 (en) Apparatus and process for controlled atmosphere chemical vapor deposition
WO1988007096A3 (en) Epitaxial installation
CA2234986A1 (en) Nitriding process and nitriding furnace therefor
TW358224B (en) Chemical vapor deposition apparatus
AU566336B2 (en) Gas premeable element of refractory material
DE3660157D1 (en) Composite tube for heating gases
WO2002005321A3 (en) Method to isolate multi zone heater from atmosphere
DE59510526D1 (en) heater
JPS6157222A (en) Apparatus for purifying noxious substance containing halogen
WO2000011411A3 (en) Water heater with heat sensitive air inlet
EP0823595A3 (en) Heaters
JPS56158420A (en) Vapor growth device
JPS5432184A (en) Forming apparatus for nitride coating
US5860805A (en) Effluent-gas-scavenger system for process tube, minimizing back diffusion and atmospheric contamination
EP0913641A3 (en) Combustion chamber for a water heater, particularly gas heated devices
WO1999040758A3 (en) Remote exposure of workpieces using a one atmosphere uniform glow discharge plasma
EP0739650A3 (en) Evacuating system with off-gas cleaning and process for operating it
SE8703182D0 (en) RESPONSE CELL FOR EPITAXIAL GROWTH OF SEMICONDUCTOR MATERIAL

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees