KR19980021208A - Chemical vapor deposition equipment - Google Patents

Chemical vapor deposition equipment Download PDF

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Publication number
KR19980021208A
KR19980021208A KR1019960039995A KR19960039995A KR19980021208A KR 19980021208 A KR19980021208 A KR 19980021208A KR 1019960039995 A KR1019960039995 A KR 1019960039995A KR 19960039995 A KR19960039995 A KR 19960039995A KR 19980021208 A KR19980021208 A KR 19980021208A
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KR
South Korea
Prior art keywords
chamber
vapor deposition
chemical vapor
gas
susceptor
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KR1019960039995A
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Korean (ko)
Inventor
남승희
김영선
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김광호
삼성전자 주식회사
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Priority to KR1019960039995A priority Critical patent/KR19980021208A/en
Priority to TW086113166A priority patent/TW358224B/en
Priority to JP9250182A priority patent/JPH10102256A/en
Publication of KR19980021208A publication Critical patent/KR19980021208A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Abstract

화학기상증착 장비가 개시되어 있다. 이 장비는 반응 가스가 화학적으로 반응하는 밀폐된 챔버와, 상기 챔버의 바닥에 설치되어 웨이퍼를 올려놓는 서셉터와, 상기 서셉터의 주위를 감싸도록 설치되어 챔버 내의 온도를 조절하는 히터와, 상기 히터의 내부에 설치되고 상기 챔버의 안쪽을 향하여 일정길이를 갖도록 돌출된 가스 주입관과, 상기 챔버의 바닥의 소정영역에 연통되어 반응된 가스를 챔버 외부로 배출시키는 가스 배출관을 포함하는 것을 특징으로 한다. 이에 따라, 본 발명의 화학기상증착장비를 이용하여 HSG 실리콘막을 형성하는 경우에 HSG 실리콘 핵 밀도를 균일하게 형성할 수 있고, HSG 실리콘막의 재현성을 개선시킬 수 있다.Chemical vapor deposition equipment is disclosed. The equipment includes a closed chamber in which a reactive gas reacts chemically, a susceptor installed at the bottom of the chamber to place a wafer, a heater installed to cover the periphery of the susceptor, and a temperature controlled chamber. A gas injection tube installed inside the heater and protruding to have a predetermined length toward the inside of the chamber, and a gas discharge tube communicating with a predetermined region of the bottom of the chamber to discharge the reacted gas to the outside of the chamber; do. Accordingly, when the HSG silicon film is formed using the chemical vapor deposition apparatus of the present invention, the HSG silicon nucleus density can be uniformly formed, and the reproducibility of the HSG silicon film can be improved.

Description

화학기상증착 장비(chemical vapor deposition apparatus)Chemical vapor deposition apparatus

본 발명은 반도체소자의 제조용 장비에 관한 것으로, 특히 화학기상증착 장비에 관한 것이다.The present invention relates to equipment for the manufacture of semiconductor devices, and more particularly to chemical vapor deposition equipment.

반도체소자를 제조하기 위하여 사용되는 장비로는 크게 웨이퍼의 소정영역에 원하는 불순물을 주입하는 이온주입 장비와, 열산화막을 성장시키기 위한 퍼니스와, 도전막 또는 절연막을 웨이퍼 상에 증착시키기 위한 증착 장비와, 상기 증착된 도전막 또는 절연막을 원하는 형태로 패터닝하기 위한 노광장비 및 식각장비가 있다. 이들 장비 중에서 증착장비는 물질막을 증착시키는 메카니즘에 따라 여러 가지로 분류할 수 있다. 여러 가지의 증착장비들 중에 가장 널리 사용되는 장비중의 하나가 반응 가스들을 밀폐된 챔버 내에 주입하고, 이들 반응가스들을 소정의 온도와 압력 하에서 화학적으로 반응시킴으로써, 원하는 물질막을 웨이퍼 상에 형성시키는 화학기상증착 장비이다. 화학기상증착 장비는 막질 및 두께의 균일도가 우수하여 반도체 제조공정에 필수적으로 사용된다. 이러한 화학기상증착 장비는 반도체소자, 예컨대 DRAM 소자의 셀 커패시터의 스토리지 전극을 형성하는 데 사용된다. DRAM 소자의 셀 커패시터는 그 용량이 클수록 셀 특성, 예컨대 저전압 동작 특성 및 알파 입자에 의한 소프트 에러 발생률이 개선되므로 셀 면적이 작은 고집적 DRAM 소자의 경우에 셀 커패시터의 용량을 증가시키는 것은 필수적으로 요구된다. 이와 같이 셀 커패시터의 용량을 증가시키는 방법으로는 여러 가지가 있으며, 이들 여러 가지의 방법 중에 스토리지 전극의 표면적을 증가시키는 방법이 활발히 연구되고 있다. 스토리지 전극의 표면적을 증가시키는 방법으로 스토리지 전극의 표면에 무수히 많은 반구형의 그레인을 갖는 HSG 실리콘막을 형성하는 방법이 널리 이용되고 있다. HSG 실리콘막은 일반적으로 비정질실리콘막으로 커패시터의 스토리지 전극을 형성한 다음, 그 결과물을 상술한 화학기상증착 장비에 투입하고, 소정의 반응가스를 사용하여 상기 스토리지 전극 표면에 선택적으로 실리콘 핵을 형성하고, 소정의 온도에서 어닐링하여 상기 실리콘 핵을 성장시킴으로써 형성한다. 이때, 화학기상증착 장비 내에서 반응 가스들의 화학반응은 온도에 매우 민감하므로 챔버 벽의 온도 및 챔버 내의 온도를 정확하게 조절하여야만 HSG 실리콘막의 재현성 및 균일도를 유지할 수 있다.Equipment used to manufacture semiconductor devices includes ion implantation equipment for injecting desired impurities into a predetermined region of a wafer, a furnace for growing a thermal oxide film, a deposition equipment for depositing a conductive film or an insulating film on a wafer; There is an exposure apparatus and an etching apparatus for patterning the deposited conductive layer or insulating layer in a desired form. Among these equipment, deposition equipment can be classified into various types according to the mechanism for depositing the material film. One of the most widely used equipment among various deposition equipment is the chemical which injects reactant gases into a closed chamber and chemically reacts them under a predetermined temperature and pressure, thereby forming a desired material film on the wafer. It is a vapor deposition equipment. Chemical vapor deposition equipment is used in semiconductor manufacturing process because of excellent film quality and uniformity of thickness. Such chemical vapor deposition equipment is used to form storage electrodes of cell capacitors of semiconductor devices, such as DRAM devices. As the cell capacitor of a DRAM device has a larger capacity, cell characteristics such as low voltage operation characteristics and soft error incidence caused by alpha particles are improved. Therefore, it is essential to increase the capacity of the cell capacitor in the case of a highly integrated DRAM device having a small cell area. . As described above, there are various methods of increasing the capacity of the cell capacitor, and among these various methods, a method of increasing the surface area of the storage electrode has been actively studied. As a method of increasing the surface area of the storage electrode, a method of forming an HSG silicon film having a myriad of hemispherical grains on the surface of the storage electrode is widely used. The HSG silicon film is generally formed of an amorphous silicon film to form a storage electrode of a capacitor, and then the resultant is introduced into the above-described chemical vapor deposition equipment, and a silicon nucleus is selectively formed on the surface of the storage electrode using a predetermined reaction gas. The silicon nucleus is formed by annealing at a predetermined temperature. At this time, since the chemical reaction of the reaction gases in the chemical vapor deposition equipment is very sensitive to temperature, it is possible to maintain the reproducibility and uniformity of the HSG silicon film only by accurately controlling the temperature of the chamber wall and the temperature in the chamber.

도 1은 종래의 화학기상증착 장비의 개략도이다.1 is a schematic diagram of a conventional chemical vapor deposition equipment.

도 1을 참조하면, 종래의 화학기상증착 장비는 반응 가스들이 서로 반응하는 챔버(1)와, 상기 챔버(1)의 바닥에 설치되어 웨이퍼를 올려놓는 서셉터(3)와, 상기 서셉터(3) 주위를 감싸면서 챔버(1) 내의 온도를 조절하는 히터(5)와, 상기 챔버(1)의 측벽의 소정영역에 연통되어 외부로부터 챔버(1) 내부로 반응 가스를 유입시키는 통로인 가스 주입용 배관(7)과, 상기 챔버(1)의 바닥의 소정영역에 연통되어 챔버(1) 내의 반응된 가스들을 외부로 배출시키기 위한 배기관(9)을 구비한다.Referring to FIG. 1, a conventional chemical vapor deposition apparatus includes a chamber 1 in which reaction gases react with each other, a susceptor 3 installed on the bottom of the chamber 1, and a wafer placed thereon, and the susceptor ( 3) a gas that is a passage for allowing the reaction gas to flow into the chamber 1 from the outside by communicating with a heater 5 for controlling the temperature in the chamber 1 while surrounding the chamber and controlling a temperature of the side wall of the chamber 1. An injection pipe 7 and an exhaust pipe 9 for communicating with a predetermined region of the bottom of the chamber 1 to discharge the reacted gases in the chamber 1 to the outside are provided.

상술한 종래의 화학기상증착 장비는 챔버 내에 반응 가스를 주입시키는 가스 주입용 배관(7)이 챔버(1) 측벽의 외부에 설치되어 있으므로, 챔버(1) 내로 유입되는 반응 가스의 온도가 챔버(1) 내의 온도보다 낮은 상태를 유지한다. 따라서, 챔버(1) 내로 주입된 반응가스의 온도가 충분히 상승하지 않은 상태로 화학반응을 일으키어 반응 속도가 느릴뿐만 아니라 웨이퍼 상에 실리콘 핵이 균일하게 형성되는 것을 방해한다. 또한, 챔버(1) 벽의 냉각을 방해하여 챔버(1) 벽에도 실리콘막이 형성되어 챔버(1) 내의 분위기를 변화시킨다. 따라서, HSG 실리콘막을 반복적으로 형성할 때 재현성이 저하되는 문제점이 있다.In the above-described conventional chemical vapor deposition equipment, since the gas injection pipe 7 for injecting the reaction gas into the chamber is installed outside the side wall of the chamber 1, the temperature of the reaction gas flowing into the chamber 1 may be increased. Maintain lower than temperature in 1). Therefore, a chemical reaction occurs in a state in which the temperature of the reaction gas injected into the chamber 1 is not sufficiently raised, thereby slowing the reaction rate and preventing uniform formation of silicon nuclei on the wafer. In addition, the cooling of the wall of the chamber 1 is prevented, so that a silicon film is formed on the wall of the chamber 1 to change the atmosphere in the chamber 1. Therefore, there is a problem in that reproducibility is lowered when repeatedly forming the HSG silicon film.

본 발명의 목적은 HSGi 실리콘막의 재현성 및 균일도를 향상시킬 수 있는 화학기상증착 장비를 제공하는 데 있다.An object of the present invention is to provide a chemical vapor deposition apparatus that can improve the reproducibility and uniformity of the HSGi silicon film.

도 1은 종래의 화학기상증착 장비의 개략도이다.1 is a schematic diagram of a conventional chemical vapor deposition equipment.

도 2는 본 발명의 화학기상증착 장비의 개략도이다.2 is a schematic diagram of a chemical vapor deposition apparatus of the present invention.

상기 목적은 달성하기 위하여 본 발명의 화학기상증착 장비는 반응 가스가 화학적으로 반응하는 밀폐된 챔버와, 상기 챔버의 바닥에 설치되어 웨이퍼를 올려놓는 서셉터와, 상기 서셉터의 주위를 감싸도록 설치되어 챔버 내의 온도를 조절하는 히터와, 상기 히터의 내부에 설치되고 상기 챔버의 안쪽을 향하여 일정길이를 갖도록 돌출된 가스 주입관과, 상기 챔버의 바닥의 소정영역에 연통되어 반응된 가스를 챔버 외부로 배출시키는 가스 배출관을 포함하는 것을 특징으로 한다.In order to achieve the above object, the chemical vapor deposition apparatus of the present invention is installed to enclose a closed chamber in which a reaction gas is chemically reacted, a susceptor installed on the bottom of the chamber, and a wafer placed on the bottom of the chamber. And a heater for controlling a temperature in the chamber, a gas injection tube installed inside the heater and protruding to have a predetermined length toward the inside of the chamber, and a gas reacted in communication with a predetermined region at the bottom of the chamber outside the chamber. It characterized in that it comprises a gas discharge pipe to discharge to.

이하, 첨부도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명의 화학기상증착 장비를 설명하기 위한 개략도이다. 여기서, 도 1과 동일한 참조번호로 표시한 부분은 동일부분을 의미한다.Figure 2 is a schematic diagram for explaining the chemical vapor deposition equipment of the present invention. Here, the parts denoted by the same reference numerals as in FIG. 1 mean the same parts.

도 2를 참조하면, 본 발명의 화학기상증착 장비는 반응 가스가 소정의 온도와 소정의 압력 하에서 화학적으로 반응하는 밀폐된 챔버(1)와, 상기 챔버(1) 바닥에 설치되어 웨이퍼를 올려놓는 서셉터(3)와, 상기 서셉터(3)의 측면을 둘러싸도록 설치되고 상기 챔버 내의 온도를 조절하는 히터(5)와, 상기 히터의 안쪽에 설치되고 상기 챔버의 내부를 향하여 일정길이를 갖도록 돌출된 적어도 하나 이상의 가스 주입관(11)과, 상기 챔버(1) 바닥의 소정영역에 연통되어 반응된 가스를 챔버 외부로 배출시키는 가스 배출관(9)을 구비한다. 여기서, 상기 가스 배출관(9)은 챔버(1) 내부를 소정의 압력으로 유지시키기 위한 진공 펌프(도시하지 않음)와 연결된다.Referring to FIG. 2, the chemical vapor deposition apparatus of the present invention includes a closed chamber 1 in which a reaction gas chemically reacts under a predetermined temperature and a predetermined pressure, and a wafer installed on the bottom of the chamber 1 to place a wafer. A susceptor 3, a heater 5 installed to surround the side of the susceptor 3 and controlling a temperature in the chamber, and a predetermined length toward the inside of the chamber and installed inside the heater. At least one protruding gas injection tube 11 and a gas discharge tube 9 which communicates with a predetermined area of the bottom of the chamber 1 and discharges the reacted gas to the outside of the chamber. Here, the gas discharge pipe 9 is connected to a vacuum pump (not shown) for maintaining the inside of the chamber 1 at a predetermined pressure.

본 발명은 상기 실시예에 한정되지 않고 당업자의 수준에서 그 변형 및 개량이 가능하다.The present invention is not limited to the above embodiments, and modifications and improvements are possible at the level of those skilled in the art.

상술한 바와 같이 본 발명의 실시예에 의하면, 반응 가스가 챔버 내부에 일정길이를 갖도록 돌출된 가스 주입관을 통하여 챔버 내부로 유입되기 때문에 챔버 내부에 도달한 반응 가스는 챔버 내부의 온도로 예열된 상태를 갖는다. 따라서, 반응 가스가 종래에 비하여 높은 활성화 에너지를 가지므로 화학반응 속도가 빠르며, 이에 따라 웨이퍼 상에 지역적으로 균일한 밀도를 갖는 실리콘 핵을 형성할 수 있다. 또한, 챔버 내부로 유입되는 반응 가스의 온도를 미리 예열시킴으로써, 반응 가스 내에 존재하는 불순물(산소 또는 탄소)을 초기에 분해시키어 웨이퍼 상에 불순물에 의한 오염입자가 흡착되는 것을 방지할 수 있고, 챔버 측벽에 반응 가스 주입관이 설치되지 않으므로 챔버 벽의 냉각 효과를 증대시키어 챔버 벽에 실리콘막이 증착되는 현상을 방지할 수 있다. 따라서, HSG 실리콘막의 재현성을 개선시킬 수 있다.As described above, according to the embodiment of the present invention, since the reaction gas is introduced into the chamber through the gas injection tube protruding to have a predetermined length inside the chamber, the reaction gas reaching the inside of the chamber is preheated to the temperature inside the chamber. Has a status. Therefore, since the reaction gas has a higher activation energy than the conventional one, the chemical reaction rate is high, thereby forming a silicon nucleus having a locally uniform density on the wafer. In addition, by preheating the temperature of the reaction gas introduced into the chamber in advance, impurities (oxygen or carbon) present in the reaction gas may be initially decomposed to prevent adsorbing of contaminated particles due to impurities on the wafer. Since the reaction gas injection tube is not installed on the sidewalls, the cooling effect of the chamber walls may be increased to prevent the silicon film from being deposited on the chamber walls. Therefore, the reproducibility of the HSG silicon film can be improved.

Claims (1)

반응 가스가 화학적으로 반응하는 밀폐된 챔버;An enclosed chamber in which the reaction gas reacts chemically; 상기 챔버의 바닥에 설치되어 웨이퍼를 올려놓는 서셉터;A susceptor installed at the bottom of the chamber to place a wafer; 상기 서셉터의 주위를 감싸도록 설치되어 챔버 내의 온도를 조절하는 히터;A heater installed to surround the susceptor to adjust a temperature in the chamber; 상기 히터의 내부에 설치되고 상기 챔버의 안쪽을 향하여 일정길이를 갖도록 돌출된 가스 주입관; 및A gas injection tube installed inside the heater and protruding to have a predetermined length toward the inside of the chamber; And 상기 챔버의 바닥의 소정영역에 연통되어 반응된 가스를 챔버 외부로 배출시키는 가스 배출관을 포함하는 것을 특징으로 하는 화학기상증착 장비.And a gas discharge pipe communicating with a predetermined area of the bottom of the chamber to discharge the reacted gas to the outside of the chamber.
KR1019960039995A 1996-09-14 1996-09-14 Chemical vapor deposition equipment KR19980021208A (en)

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Cited By (2)

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KR20010078621A (en) * 2000-02-09 2001-08-21 황 철 주 Apparatus for chemical vapor deposition
KR100730065B1 (en) * 2000-12-20 2007-06-20 엘지.필립스 엘시디 주식회사 Chemical Enhanced Vapor Deposition Device

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US6305314B1 (en) * 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6503330B1 (en) 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6551399B1 (en) 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
US6617173B1 (en) 2000-10-11 2003-09-09 Genus, Inc. Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010078621A (en) * 2000-02-09 2001-08-21 황 철 주 Apparatus for chemical vapor deposition
KR100730065B1 (en) * 2000-12-20 2007-06-20 엘지.필립스 엘시디 주식회사 Chemical Enhanced Vapor Deposition Device

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