JPS5337186A - Chemical gas phase accumulating method - Google Patents
Chemical gas phase accumulating methodInfo
- Publication number
- JPS5337186A JPS5337186A JP11080176A JP11080176A JPS5337186A JP S5337186 A JPS5337186 A JP S5337186A JP 11080176 A JP11080176 A JP 11080176A JP 11080176 A JP11080176 A JP 11080176A JP S5337186 A JPS5337186 A JP S5337186A
- Authority
- JP
- Japan
- Prior art keywords
- wafers
- gas phase
- chemical gas
- accumulating method
- phase accumulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To avoid the crystal defects such as dislocation, stacking fault, etc., by heating the wafers indirectly from the outside of the furnace while holding a large number of wafers vertically so that the principal surfaces of the wafers may become parallel to the direction of flowing of the reaction gas, without heating the wafers directly with the susceptor.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11080176A JPS5337186A (en) | 1976-09-17 | 1976-09-17 | Chemical gas phase accumulating method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11080176A JPS5337186A (en) | 1976-09-17 | 1976-09-17 | Chemical gas phase accumulating method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5337186A true JPS5337186A (en) | 1978-04-06 |
Family
ID=14544986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11080176A Pending JPS5337186A (en) | 1976-09-17 | 1976-09-17 | Chemical gas phase accumulating method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5337186A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS573706A (en) * | 1980-06-04 | 1982-01-09 | Hitachi Chem Co Ltd | Vapor-phase deposition |
JPS5959878A (en) * | 1982-08-27 | 1984-04-05 | アニコン・インコ−ポレ−テツド | Chemical evaporation deposition apparatus and method |
JPS59103434U (en) * | 1982-12-28 | 1984-07-12 | 株式会社豊田中央研究所 | Liquid phase epitaxial growth equipment |
JPH01108196A (en) * | 1987-10-20 | 1989-04-25 | Stanley Electric Co Ltd | Liquid phase crystal epitaxy apparatus for semiconductor crystal |
-
1976
- 1976-09-17 JP JP11080176A patent/JPS5337186A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS573706A (en) * | 1980-06-04 | 1982-01-09 | Hitachi Chem Co Ltd | Vapor-phase deposition |
JPS5959878A (en) * | 1982-08-27 | 1984-04-05 | アニコン・インコ−ポレ−テツド | Chemical evaporation deposition apparatus and method |
JPS6256232B2 (en) * | 1982-08-27 | 1987-11-25 | Anicon Inc | |
JPS59103434U (en) * | 1982-12-28 | 1984-07-12 | 株式会社豊田中央研究所 | Liquid phase epitaxial growth equipment |
JPH027464Y2 (en) * | 1982-12-28 | 1990-02-22 | ||
JPH01108196A (en) * | 1987-10-20 | 1989-04-25 | Stanley Electric Co Ltd | Liquid phase crystal epitaxy apparatus for semiconductor crystal |
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