JPS5337186A - Chemical gas phase accumulating method - Google Patents

Chemical gas phase accumulating method

Info

Publication number
JPS5337186A
JPS5337186A JP11080176A JP11080176A JPS5337186A JP S5337186 A JPS5337186 A JP S5337186A JP 11080176 A JP11080176 A JP 11080176A JP 11080176 A JP11080176 A JP 11080176A JP S5337186 A JPS5337186 A JP S5337186A
Authority
JP
Japan
Prior art keywords
wafers
gas phase
chemical gas
accumulating method
phase accumulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11080176A
Other languages
Japanese (ja)
Inventor
Akira Kanai
Mitsuru Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11080176A priority Critical patent/JPS5337186A/en
Publication of JPS5337186A publication Critical patent/JPS5337186A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To avoid the crystal defects such as dislocation, stacking fault, etc., by heating the wafers indirectly from the outside of the furnace while holding a large number of wafers vertically so that the principal surfaces of the wafers may become parallel to the direction of flowing of the reaction gas, without heating the wafers directly with the susceptor.
COPYRIGHT: (C)1978,JPO&Japio
JP11080176A 1976-09-17 1976-09-17 Chemical gas phase accumulating method Pending JPS5337186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11080176A JPS5337186A (en) 1976-09-17 1976-09-17 Chemical gas phase accumulating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11080176A JPS5337186A (en) 1976-09-17 1976-09-17 Chemical gas phase accumulating method

Publications (1)

Publication Number Publication Date
JPS5337186A true JPS5337186A (en) 1978-04-06

Family

ID=14544986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11080176A Pending JPS5337186A (en) 1976-09-17 1976-09-17 Chemical gas phase accumulating method

Country Status (1)

Country Link
JP (1) JPS5337186A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS573706A (en) * 1980-06-04 1982-01-09 Hitachi Chem Co Ltd Vapor-phase deposition
JPS5959878A (en) * 1982-08-27 1984-04-05 アニコン・インコ−ポレ−テツド Chemical evaporation deposition apparatus and method
JPS59103434U (en) * 1982-12-28 1984-07-12 株式会社豊田中央研究所 Liquid phase epitaxial growth equipment
JPH01108196A (en) * 1987-10-20 1989-04-25 Stanley Electric Co Ltd Liquid phase crystal epitaxy apparatus for semiconductor crystal

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS573706A (en) * 1980-06-04 1982-01-09 Hitachi Chem Co Ltd Vapor-phase deposition
JPS5959878A (en) * 1982-08-27 1984-04-05 アニコン・インコ−ポレ−テツド Chemical evaporation deposition apparatus and method
JPS6256232B2 (en) * 1982-08-27 1987-11-25 Anicon Inc
JPS59103434U (en) * 1982-12-28 1984-07-12 株式会社豊田中央研究所 Liquid phase epitaxial growth equipment
JPH027464Y2 (en) * 1982-12-28 1990-02-22
JPH01108196A (en) * 1987-10-20 1989-04-25 Stanley Electric Co Ltd Liquid phase crystal epitaxy apparatus for semiconductor crystal

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