JPS573706A - Vapor-phase deposition - Google Patents

Vapor-phase deposition

Info

Publication number
JPS573706A
JPS573706A JP7599880A JP7599880A JPS573706A JP S573706 A JPS573706 A JP S573706A JP 7599880 A JP7599880 A JP 7599880A JP 7599880 A JP7599880 A JP 7599880A JP S573706 A JPS573706 A JP S573706A
Authority
JP
Japan
Prior art keywords
base material
gas
deposition
mask
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7599880A
Other languages
Japanese (ja)
Inventor
Kazuo Asano
Masaru Kurata
Akira Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP7599880A priority Critical patent/JPS573706A/en
Publication of JPS573706A publication Critical patent/JPS573706A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:In the process for effecting vapor-phase deposition on the heated base material, a mask for screening the vapor from the thermal radiation from the base material is provided, thus ensuring the deposition on places difficult to be deposited. CONSTITUTION:In the heat-resistant vessel, e.g, of a quartz tube 2 provided with a high frequency coil on the outer surface, the base material 3 is supported on the jig 4 and the gas for deposition is introduced together with a carrier gas such as nitrogen or argon gas in the arrow direction. For example, a halogenated hydrocarbon is used as the deposition gas and, when the base material is heated, the gas is decomposed to form carbon, which deposits on the surface of the base material. During the deposition, a mask that has low thermal conductivity and withstands the thermal radiation from the base material such as heat-resistant asbestos or carbon cloth 5 is used to prevent the thermal decomposition of the gas before it reaches the surface of the base material, which is caused by the heat radiation from the base material. The position of the mask 5 is decided by testing.
JP7599880A 1980-06-04 1980-06-04 Vapor-phase deposition Pending JPS573706A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7599880A JPS573706A (en) 1980-06-04 1980-06-04 Vapor-phase deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7599880A JPS573706A (en) 1980-06-04 1980-06-04 Vapor-phase deposition

Publications (1)

Publication Number Publication Date
JPS573706A true JPS573706A (en) 1982-01-09

Family

ID=13592460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7599880A Pending JPS573706A (en) 1980-06-04 1980-06-04 Vapor-phase deposition

Country Status (1)

Country Link
JP (1) JPS573706A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913062A (en) * 1982-07-14 1984-01-23 Mitsubishi Chem Ind Ltd Method for depositing carbon generated on conductive base material by thermal decomposition in gaseous phase
JPS5930709A (en) * 1982-08-13 1984-02-18 Toa Nenryo Kogyo Kk Method for synthesizing carbon film and carbon granule in vapor phase
JPS6430357U (en) * 1987-08-12 1989-02-23
JPH02250973A (en) * 1989-03-25 1990-10-08 Tokyo Electron Ltd Film forming device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4942792A (en) * 1972-09-01 1974-04-22
JPS5211047B2 (en) * 1972-12-29 1977-03-28
JPS5337186A (en) * 1976-09-17 1978-04-06 Hitachi Ltd Chemical gas phase accumulating method
JPS55110031A (en) * 1979-02-19 1980-08-25 Fujitsu Ltd Method for vapor growth

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4942792A (en) * 1972-09-01 1974-04-22
JPS5211047B2 (en) * 1972-12-29 1977-03-28
JPS5337186A (en) * 1976-09-17 1978-04-06 Hitachi Ltd Chemical gas phase accumulating method
JPS55110031A (en) * 1979-02-19 1980-08-25 Fujitsu Ltd Method for vapor growth

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913062A (en) * 1982-07-14 1984-01-23 Mitsubishi Chem Ind Ltd Method for depositing carbon generated on conductive base material by thermal decomposition in gaseous phase
JPH059514B2 (en) * 1982-07-14 1993-02-05 Mitsubishi Chem Ind
JPS5930709A (en) * 1982-08-13 1984-02-18 Toa Nenryo Kogyo Kk Method for synthesizing carbon film and carbon granule in vapor phase
JPH0333641B2 (en) * 1982-08-13 1991-05-17 Tonen Kk
JPS6430357U (en) * 1987-08-12 1989-02-23
JPH02250973A (en) * 1989-03-25 1990-10-08 Tokyo Electron Ltd Film forming device

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Legal Events

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A621 Written request for application examination

Effective date: 20050228

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A762 Written abandonment of application

Effective date: 20061225

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