JPS648616A - Lamp annealing apparatus - Google Patents

Lamp annealing apparatus

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Publication number
JPS648616A
JPS648616A JP16448387A JP16448387A JPS648616A JP S648616 A JPS648616 A JP S648616A JP 16448387 A JP16448387 A JP 16448387A JP 16448387 A JP16448387 A JP 16448387A JP S648616 A JPS648616 A JP S648616A
Authority
JP
Japan
Prior art keywords
susceptor
melting point
point metal
high melting
metal material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16448387A
Other languages
Japanese (ja)
Inventor
Masanori Kominami
Makoto Kurotobi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16448387A priority Critical patent/JPS648616A/en
Publication of JPS648616A publication Critical patent/JPS648616A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To improve cohesion with substrate and gas purge and also realize improvement of short period annealing effect with high thermal conductivity by using a high melting point metal material, in place of graphite, at least for the surface of lamp annealing apparatus susceptor. CONSTITUTION:A lamp 1 for annealing, a susceptor 2 and a susceptor supporting rod 4 are place within a quartz tube and a substrate 3 to be processed are housed within the susceptor 2. The entire part of susceptors 21, 21 are formed by a high melting point metal material, or the susceptor surface is coated with a high melting point metal 22 while an interior is formed by graphite 23, or the susceptor supporting rod 4 is also formed by a high melting point metal. When tungsten is used as the high melting point metal material, uniformity and reproducibility can also be improved.
JP16448387A 1987-06-30 1987-06-30 Lamp annealing apparatus Pending JPS648616A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16448387A JPS648616A (en) 1987-06-30 1987-06-30 Lamp annealing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16448387A JPS648616A (en) 1987-06-30 1987-06-30 Lamp annealing apparatus

Publications (1)

Publication Number Publication Date
JPS648616A true JPS648616A (en) 1989-01-12

Family

ID=15794028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16448387A Pending JPS648616A (en) 1987-06-30 1987-06-30 Lamp annealing apparatus

Country Status (1)

Country Link
JP (1) JPS648616A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02303121A (en) * 1989-05-01 1990-12-17 American Teleph & Telegr Co <Att> Manufacture of semicowductor device
JPH08213337A (en) * 1994-11-30 1996-08-20 New Japan Radio Co Ltd Heat treatment of semiconductor substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02303121A (en) * 1989-05-01 1990-12-17 American Teleph & Telegr Co <Att> Manufacture of semicowductor device
JPH08213337A (en) * 1994-11-30 1996-08-20 New Japan Radio Co Ltd Heat treatment of semiconductor substrate

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