JPS55127080A - Photoconductive element - Google Patents
Photoconductive elementInfo
- Publication number
- JPS55127080A JPS55127080A JP3587279A JP3587279A JPS55127080A JP S55127080 A JPS55127080 A JP S55127080A JP 3587279 A JP3587279 A JP 3587279A JP 3587279 A JP3587279 A JP 3587279A JP S55127080 A JPS55127080 A JP S55127080A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- glow discharge
- photoconductive element
- silicon carbide
- gaseous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
PURPOSE: To obtain such photoconductive element as is high in field resistance and voltage resistance but small in dark current by subjecting an Si compound gaseous in an inert gas atmosphere and hydrocarbon simultanuously to glow discharge decomposition to noncrystal silicon carbide containing hydrogen.
CONSTITUTION: A substrate 1 consisitng of Si single crystal, stainless steel, Al, quartz glass, etc. is covered with a conductive coat of metal oxide, and the surface is kept thoroughly clean. Next, the substrate 1 is enclosed in a glow discharge device and heated to 150∼400°C, and Ar carrier gas containing H2, a mixed gas of SiH4gaseous at room temperature and C2H are fed in the device. After that, glow discharge is generated under pressures 102∼107Torr to decompose these gases, and noncrystal silicon carbide layer 2 is grown on the substrate 1. It is then adjusted to a desired conductivity, where necessary, by adding B2H6, PH3, etc. as contents. A photoconductive element is now obtainable through fixing electrodes 3 and 4 on the layer 2.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3587279A JPS55127080A (en) | 1979-03-26 | 1979-03-26 | Photoconductive element |
US06/132,406 US4329699A (en) | 1979-03-26 | 1980-03-21 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3587279A JPS55127080A (en) | 1979-03-26 | 1979-03-26 | Photoconductive element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55127080A true JPS55127080A (en) | 1980-10-01 |
Family
ID=12454078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3587279A Pending JPS55127080A (en) | 1979-03-26 | 1979-03-26 | Photoconductive element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55127080A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5662255A (en) * | 1979-10-26 | 1981-05-28 | Fuji Photo Film Co Ltd | Electrophotographic receptor |
JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
JPS57119356A (en) * | 1981-01-16 | 1982-07-24 | Canon Inc | Photoconductive member |
JPS57177147A (en) * | 1981-04-23 | 1982-10-30 | Canon Inc | Image forming member for electrophotography |
FR2523371A1 (en) * | 1982-03-10 | 1983-09-16 | Contellec Michel Le | Simplified cell for video retina - using photoconducting element in hydrogenated amorphous silicon carbide |
DE3408761A1 (en) | 1983-03-11 | 1984-09-20 | Canon K.K., Tokio/Tokyo | PHOTOSENSOR |
-
1979
- 1979-03-26 JP JP3587279A patent/JPS55127080A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5662255A (en) * | 1979-10-26 | 1981-05-28 | Fuji Photo Film Co Ltd | Electrophotographic receptor |
JPS639217B2 (en) * | 1979-10-26 | 1988-02-26 | Fuji Photo Film Co Ltd | |
JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
JPS6148276B2 (en) * | 1980-12-03 | 1986-10-23 | Kanegafuchi Kagaku Kogyo Kk | |
JPS57119356A (en) * | 1981-01-16 | 1982-07-24 | Canon Inc | Photoconductive member |
JPS628783B2 (en) * | 1981-01-16 | 1987-02-24 | Canon Kk | |
JPS57177147A (en) * | 1981-04-23 | 1982-10-30 | Canon Inc | Image forming member for electrophotography |
JPS628785B2 (en) * | 1981-04-23 | 1987-02-24 | Canon Kk | |
FR2523371A1 (en) * | 1982-03-10 | 1983-09-16 | Contellec Michel Le | Simplified cell for video retina - using photoconducting element in hydrogenated amorphous silicon carbide |
DE3408761A1 (en) | 1983-03-11 | 1984-09-20 | Canon K.K., Tokio/Tokyo | PHOTOSENSOR |
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