US4485121A - Method for producing a fluorine-containing amorphous semiconductor - Google Patents

Method for producing a fluorine-containing amorphous semiconductor Download PDF

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US4485121A
US4485121A US06/503,088 US50308883A US4485121A US 4485121 A US4485121 A US 4485121A US 50308883 A US50308883 A US 50308883A US 4485121 A US4485121 A US 4485121A
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gas
fluorine
containing amorphous
silicon
sif
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Hideki Matsumura
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Tokyo Institute of Technology NUC
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Definitions

  • the present invention relates to a method for producing a fluorine-containing amorphous semiconductor, particularly a fluorine-containing amorphous silicon, silicon carbide, silicon germanium or other amorphous semiconductors.
  • fluorine-containing amorphous semiconductors have been produced by decomposing either of mixed gases of silicon tetrafluoride SiF 4 gas with hydrogen gas or silicon tetrafluoride gas with silane (SiH 4 ) gas, with glow discharge as described in U.S. Pat. No. 4,226,898.
  • the production method of this prior art has a defect that the incorporation of fluorine into the amorphous semiconductor cannot be satisfactorily controlled, so that even though fluorine which is high in the bonding energy to silicon and should be inherently stable, is contained, the thermal stability is not improved as compared with that of the prior amorphous semiconductors which do not contain fluorine and further the electrooptical properties, such as the photoconductivity and photosensitivity are equal to or rather inferior to those of the prior amorphous semiconductors not containing fluorine.
  • the present invention aims at the production of amorphous semiconductors, such as amorphous silicon having high thermal stability, that is high heat resistance by containing fluorine in an amorphous semiconductor in a high controllability in an ideal form, whereby the inherent feature of fluorine is utilized.
  • the present invention lies in a method for producing a fluroine-containing amorphous semiconductor which comprises mixing silicon difluoride SiF 2 gas or silicon monofluoride SiF gas with hydrogen (H 2 ) gas or hydrogen atom (H) gas, decomposing the mixed gas by electric discharge and depositing the decomposed gas on a substrate to form the fluorine-containing amorphous semiconductor.
  • SiFH 3 gas or SiF 2 H 2 gas instead of the mixture of silicon difluoride gas or silicon monofluoride gas with hydrogen gas or hydrogen atom gas, SiFH 3 gas or SiF 2 H 2 gas may be used as the starting gas.
  • an amorphous semiconductor not having the above described defect can be obtained by using the mixed gas of silicon difluroide SiF 2 gas which is unstable at room temperature and under atmospheric pressure and therefore is not present in natural form but is very active and has a short life and possibility that fluorine can be incorporated in high controllability, or silicon monofluoride SiF which is a fragment thereof, with hydrogen gas or hydrogen atom gas, as a main component of a material gas.
  • FIG. 1 is a diagrammatic illustration of an apparatus for carrying out the method of the present invention
  • FIG. 2 is a graph showing the relation of an amount of hydrogen gas flowed to a rate of the film grown.
  • FIG. 3 is graphs showing the relation of the heat treating temperature to the photoconductivity and the photosensitivity.
  • the amorphous semiconductors produced by the method of the present invention include a fluorine-containing amorphous silicon or semiconductors in which a fluorine-containing amorphous silicon is a basic skeleton which contains other elements therein, for example, fluorine-containing amorphous silicon carbide or amorphous silicon germanium.
  • the decomposing deposit may be carried out by glow discharge process, discharge process which does not cause glow, arc discharge process or CVD process.
  • CVD process is somewhat low in the depositing speed.
  • the temperature of the substrate upon depositing is about 250°-600° C.
  • SiF 2 is used, so that it is possible to use the substrate temperature which is higher than about 500° C.
  • the depositing speed for obtaining the amorphous semiconductor having the same quality as the case using SiF 4 is very rapid as high as 2-3 times as compared with the case using SiF 4 .
  • the amorphous semiconductors produced by the method of the present invention can be used for solar cell, photosensor for facsimile, photosensitive material for electrophotography, photosensitive material for television camera, thin film transistor and the like.
  • silicon difluoride SiF 2 is mixed with hydrogen to prepare a base gas, said gas is decomposed with a high frequency glow discharge and an amorphous silicon semmiconductor is deposited on a substrate.
  • solid silicon and silicon tetrafluoride SiF 4 gas are heated in an electric furnace to generate silicon difluoride SiF 2 through a chemical reaction formula of SiF 4 +Si ⁇ 2SiF 2 .
  • a diagrammatic view of an apparatus in this case is shown in FIG. 1.
  • a high frequency glow discharge apparatus 1 is used as a furnace for producing the amorphous semiconductor, 120 sc cm (1 sc cm: an amount of gas flowed of 1 cc per minute in pressure difference of 1 atm) of hydrogen is introduced into said glow discharge apparatus 1 from an inlet tube 19 and at least 10 sc cm of SiF 2 is fed from an outlet end positioned at right side of a quartz tube 39.
  • a temperature of an electric furnace 37 is 1,150° C.
  • 10 sc cm of SiF 4 is introduced therein from an inlet end positioned at left side of the quartz tube 39, 10 sc cm or more of SiF 2 is generated in the electric furnace 37 and fed into the high frequency glow discharge apparatus 1.
  • a frequency having 13.65 MHz and a power of 25-30 W is flowed into a high frequency coil 5 from an input terminal 7.
  • a substrate 3 has been heated at about 500° C., an amorphous silicon semiconductor is deposited at a growing rate of 5-10 ⁇ /sec on the substrate 3.
  • an amorphous semiconductor may be stably deposited at a relatively high growing rate.
  • FIG. 2 shows a rate of amorphous silicon deposited when about 10 sc cm or more of SiF 2 (an amount of SiF 4 flowed: 10 sc cm) is flowed and an amount of H 2 flowed is varied by means of the apparatus of FIG. 1.
  • the temperature Ts of the substrate is 500° C.
  • the high frequency power is 30 W
  • the gas pressure Pg in the apparatus 1 is about 0.1 Torr (0.1 mmHg).
  • the growing rate is about 5-10 ⁇ /sec.
  • FIG. 3 shows the variation of the photoconductivity ⁇ p ( ⁇ cm) -1 (blank mark) and the photosensitivity ( ⁇ p / ⁇ d , ⁇ d : dark conductivity, black mark) when the amorphous silicon produced at an amount of H 2 flowed of 120 sc cm is subjected to heat treatment under vacuum.
  • the conditions for producing the sample other than the amount of hydrogen flowed are the same as those in FIG.
  • the photoconductivity was measured by He.Ne laser beam of 1 mW/cm 2 .
  • the properties are not substantially deteriorated after the heat treatment at a temperature of higher than 500° C.
  • the diffusion of impurities in the amorphous semiconductors produced by the method of the present invention is prevented.
  • a conventional amorphous silicon containing only hydrogen is applied to a solar cell, the properties are deteriorated with lapse of time due to diffusion of electrode metal and diffusion of p- or n-type dopants and the amorphous silicon is unstable and poor in the weather resistance.
  • the heat resistance is very high and the diffusion of the electrode metal and p- or n-type dopants is controlled, so that the defects in view of the deterioration with lapse of time, the unstability and the weather resistance are solved.
  • the present invention can produce very rapidly fluorine-containing semiconductors having high quality. Accordingly, the method of the present invention is very high in the practical value and very commercially valuable.

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Abstract

Production of fluorine-containing amorphous semiconductors having high thermal stability, photoconductivity and photosensitivity by decomposing a mixed gas of silicon difluoride gas or silicon monofluoride gas with hydrogen gas or hydrogen atom gas, or SiFH3 gas or SiF2 H2 gas with electric discharge and depositing the decomposed gas on a substrate.

Description

BACKGROUND OF THE INVENTION
1. Field of the Invention:
The present invention relates to a method for producing a fluorine-containing amorphous semiconductor, particularly a fluorine-containing amorphous silicon, silicon carbide, silicon germanium or other amorphous semiconductors.
2. Description of the Prior Art:
Recently, fluorine-containing amorphous semiconductors have been noticed to solar cell and other various uses.
Heretofore, fluorine-containing amorphous semiconductors have been produced by decomposing either of mixed gases of silicon tetrafluoride SiF4 gas with hydrogen gas or silicon tetrafluoride gas with silane (SiH4) gas, with glow discharge as described in U.S. Pat. No. 4,226,898. However, the production method of this prior art has a defect that the incorporation of fluorine into the amorphous semiconductor cannot be satisfactorily controlled, so that even though fluorine which is high in the bonding energy to silicon and should be inherently stable, is contained, the thermal stability is not improved as compared with that of the prior amorphous semiconductors which do not contain fluorine and further the electrooptical properties, such as the photoconductivity and photosensitivity are equal to or rather inferior to those of the prior amorphous semiconductors not containing fluorine.
SUMMARY OF THE INVENTION
The present invention aims at the production of amorphous semiconductors, such as amorphous silicon having high thermal stability, that is high heat resistance by containing fluorine in an amorphous semiconductor in a high controllability in an ideal form, whereby the inherent feature of fluorine is utilized.
The present invention lies in a method for producing a fluroine-containing amorphous semiconductor which comprises mixing silicon difluoride SiF2 gas or silicon monofluoride SiF gas with hydrogen (H2) gas or hydrogen atom (H) gas, decomposing the mixed gas by electric discharge and depositing the decomposed gas on a substrate to form the fluorine-containing amorphous semiconductor. In this case, instead of the mixture of silicon difluoride gas or silicon monofluoride gas with hydrogen gas or hydrogen atom gas, SiFH3 gas or SiF2 H2 gas may be used as the starting gas.
According to the present invention, an amorphous semiconductor not having the above described defect can be obtained by using the mixed gas of silicon difluroide SiF2 gas which is unstable at room temperature and under atmospheric pressure and therefore is not present in natural form but is very active and has a short life and possibility that fluorine can be incorporated in high controllability, or silicon monofluoride SiF which is a fragment thereof, with hydrogen gas or hydrogen atom gas, as a main component of a material gas.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a diagrammatic illustration of an apparatus for carrying out the method of the present invention;
FIG. 2 is a graph showing the relation of an amount of hydrogen gas flowed to a rate of the film grown; and
FIG. 3 is graphs showing the relation of the heat treating temperature to the photoconductivity and the photosensitivity.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
The amorphous semiconductors produced by the method of the present invention include a fluorine-containing amorphous silicon or semiconductors in which a fluorine-containing amorphous silicon is a basic skeleton which contains other elements therein, for example, fluorine-containing amorphous silicon carbide or amorphous silicon germanium.
The decomposing deposit may be carried out by glow discharge process, discharge process which does not cause glow, arc discharge process or CVD process. CVD process is somewhat low in the depositing speed.
The temperature of the substrate upon depositing is about 250°-600° C. In the present invention, SiF2 is used, so that it is possible to use the substrate temperature which is higher than about 500° C. In the present invention, the depositing speed for obtaining the amorphous semiconductor having the same quality as the case using SiF4 is very rapid as high as 2-3 times as compared with the case using SiF4.
The amorphous semiconductors produced by the method of the present invention can be used for solar cell, photosensor for facsimile, photosensitive material for electrophotography, photosensitive material for television camera, thin film transistor and the like.
In one embodiment of the method of the present invention, silicon difluoride SiF2 is mixed with hydrogen to prepare a base gas, said gas is decomposed with a high frequency glow discharge and an amorphous silicon semmiconductor is deposited on a substrate. In this embodiment, solid silicon and silicon tetrafluoride SiF4 gas are heated in an electric furnace to generate silicon difluoride SiF2 through a chemical reaction formula of SiF4 +Si→2SiF2. A diagrammatic view of an apparatus in this case is shown in FIG. 1.
In the embodiment of operation of the apparatus shown in FIG. 1, a high frequency glow discharge apparatus 1 is used as a furnace for producing the amorphous semiconductor, 120 sc cm (1 sc cm: an amount of gas flowed of 1 cc per minute in pressure difference of 1 atm) of hydrogen is introduced into said glow discharge apparatus 1 from an inlet tube 19 and at least 10 sc cm of SiF2 is fed from an outlet end positioned at right side of a quartz tube 39. When a temperature of an electric furnace 37 is 1,150° C., if 10 sc cm of SiF4 is introduced therein from an inlet end positioned at left side of the quartz tube 39, 10 sc cm or more of SiF2 is generated in the electric furnace 37 and fed into the high frequency glow discharge apparatus 1. In the high frequency glow discharge apparatus 1, a frequency having 13.65 MHz and a power of 25-30 W is flowed into a high frequency coil 5 from an input terminal 7. When a substrate 3 has been heated at about 500° C., an amorphous silicon semiconductor is deposited at a growing rate of 5-10 Å/sec on the substrate 3.
According to the method of the present invention, an amorphous semiconductor may be stably deposited at a relatively high growing rate. FIG. 2 shows a rate of amorphous silicon deposited when about 10 sc cm or more of SiF2 (an amount of SiF4 flowed: 10 sc cm) is flowed and an amount of H2 flowed is varied by means of the apparatus of FIG. 1. The temperature Ts of the substrate is 500° C., the high frequency power is 30 W, the gas pressure Pg in the apparatus 1 is about 0.1 Torr (0.1 mmHg). When an amount of H2 flowed is more than 100 sc cm, the growing rate is about 5-10 Å/sec.
Even though the amorphous silicon according to the method of the present invention if formed in a relatively high growing rate, the amorphous silicon has high heat resistance and photoconductivity, and the photoconductivity is not deteriorated even after the heat treatment at a temperature of higher than 500° C. under vacuum. As an example thereof, FIG. 3 shows the variation of the photoconductivity Δσp (Ωcm)-1 (blank mark) and the photosensitivity (Δσp /σd, σd : dark conductivity, black mark) when the amorphous silicon produced at an amount of H2 flowed of 120 sc cm is subjected to heat treatment under vacuum. The conditions for producing the sample other than the amount of hydrogen flowed are the same as those in FIG. 2. The photoconductivity was measured by He.Ne laser beam of 1 mW/cm2. As shown in FIG. 3, the properties are not substantially deteriorated after the heat treatment at a temperature of higher than 500° C. Furthermore, the diffusion of impurities in the amorphous semiconductors produced by the method of the present invention is prevented. When a conventional amorphous silicon containing only hydrogen is applied to a solar cell, the properties are deteriorated with lapse of time due to diffusion of electrode metal and diffusion of p- or n-type dopants and the amorphous silicon is unstable and poor in the weather resistance. In the amorphous silicon according to the present invention, the heat resistance is very high and the diffusion of the electrode metal and p- or n-type dopants is controlled, so that the defects in view of the deterioration with lapse of time, the unstability and the weather resistance are solved. Furthermore, the present invention can produce very rapidly fluorine-containing semiconductors having high quality. Accordingly, the method of the present invention is very high in the practical value and very commercially valuable.

Claims (7)

What is claimed is:
1. A method for producing a fluorine-containing amorphous semiconductor, which comprises decomposing a mixed gas obtained by mixing silicon difluoride SiF2 gas or silicon monofluoride SiF gas with hydrogen (H2) gas or hydrogen atom (H) gas, or SiFH3 gas or SiF2 H2 gas with electric discharge and depositing the decomposed gas on a substrate to form a fluorine-containing amorphous semiconductor.
2. The method as claimed in claim 1, wherein the formed fluorine-containing amorphous semiconductor is fluorine-containing amorphous silicon.
3. The method as claimed in claim 1, wherein the formed fluorine-containing amorphous semiconductor is a semiconductor in which fluorine-containing amorphous silicon is a basic skeleton and other elements are contained in the basic skeleton.
4. The method as claimed in claim 3, wherein said fluorine-containing amorphous semiconductor is fluorine-containing amorphous silicon carbide or amorphous silicon germanium.
5. The method as claimed in claim 1, wherein the decomposition is carried out at a temperature of about 250°-600° C.
6. The method as claimed in claim 5, wherein the decomposition temperature is about 250°-500° C.
7. The method as claimed in claim 5, wherein the decomposition temperature is about 500°-600° C.
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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4704300A (en) * 1984-03-12 1987-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for producing silicon nitride layer
US4717602A (en) * 1984-03-12 1988-01-05 Semiconductor Energy Laboratory Co., Ltd. Method for producing silicon nitride layers
EP0262980A2 (en) * 1986-10-03 1988-04-06 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes
US4761302A (en) * 1987-05-01 1988-08-02 The United States Department Of Energy Fluorination of amorphous thin-film materials with xenon fluoride
US4762808A (en) * 1987-06-22 1988-08-09 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes
US4839312A (en) * 1978-03-16 1989-06-13 Energy Conversion Devices, Inc. Fluorinated precursors from which to fabricate amorphous semiconductor material
US4870030A (en) * 1987-09-24 1989-09-26 Research Triangle Institute, Inc. Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer
EP0344863A1 (en) * 1988-05-30 1989-12-06 Interuniversitair Microelektronica Centrum Vzw A method of producing a thin film transistor
US5082696A (en) * 1986-10-03 1992-01-21 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes
US5154135A (en) * 1984-07-16 1992-10-13 Canon Kabushiki Kaisha Apparatus for forming a deposited film
US5518952A (en) * 1992-02-25 1996-05-21 Markpoint Development Ab Method of coating a piezoelectric substrate with a semiconducting material
US20150007615A1 (en) * 2013-07-02 2015-01-08 Valentin Gapontsev High Power Fiber Laser System with Side Pumping Arrangement
WO2016086617A1 (en) * 2014-12-03 2016-06-09 京东方科技集团股份有限公司 Solar cell and manufacturing method therefor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4839312A (en) * 1978-03-16 1989-06-13 Energy Conversion Devices, Inc. Fluorinated precursors from which to fabricate amorphous semiconductor material
US4717602A (en) * 1984-03-12 1988-01-05 Semiconductor Energy Laboratory Co., Ltd. Method for producing silicon nitride layers
US4704300A (en) * 1984-03-12 1987-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for producing silicon nitride layer
US5154135A (en) * 1984-07-16 1992-10-13 Canon Kabushiki Kaisha Apparatus for forming a deposited film
US5082696A (en) * 1986-10-03 1992-01-21 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes
EP0262980A3 (en) * 1986-10-03 1989-01-25 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes
EP0262980A2 (en) * 1986-10-03 1988-04-06 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes
US4761302A (en) * 1987-05-01 1988-08-02 The United States Department Of Energy Fluorination of amorphous thin-film materials with xenon fluoride
US4762808A (en) * 1987-06-22 1988-08-09 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes
US4870030A (en) * 1987-09-24 1989-09-26 Research Triangle Institute, Inc. Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer
EP0344863A1 (en) * 1988-05-30 1989-12-06 Interuniversitair Microelektronica Centrum Vzw A method of producing a thin film transistor
US5518952A (en) * 1992-02-25 1996-05-21 Markpoint Development Ab Method of coating a piezoelectric substrate with a semiconducting material
US20150007615A1 (en) * 2013-07-02 2015-01-08 Valentin Gapontsev High Power Fiber Laser System with Side Pumping Arrangement
WO2016086617A1 (en) * 2014-12-03 2016-06-09 京东方科技集团股份有限公司 Solar cell and manufacturing method therefor
US10205045B2 (en) 2014-12-03 2019-02-12 Boe Technology Group Co., Ltd. Solar cell and method of manufacturing the same

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