JPS6333874A - Manufacture of fluorinated silicon germanium thin-film - Google Patents
Manufacture of fluorinated silicon germanium thin-filmInfo
- Publication number
- JPS6333874A JPS6333874A JP61176645A JP17664586A JPS6333874A JP S6333874 A JPS6333874 A JP S6333874A JP 61176645 A JP61176645 A JP 61176645A JP 17664586 A JP17664586 A JP 17664586A JP S6333874 A JPS6333874 A JP S6333874A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mixed gas
- gef4
- gas
- containing fluorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical class [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910000077 silane Inorganic materials 0.000 claims abstract description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 8
- 239000011737 fluorine Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 43
- 230000003287 optical effect Effects 0.000 abstract description 11
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910006160 GeF4 Inorganic materials 0.000 abstract description 6
- PPMWWXLUCOODDK-UHFFFAOYSA-N tetrafluorogermane Chemical compound F[Ge](F)(F)F PPMWWXLUCOODDK-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052732 germanium Inorganic materials 0.000 abstract description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 5
- 239000002994 raw material Substances 0.000 abstract description 5
- SDNBGJALFMSQER-UHFFFAOYSA-N trifluoro(trifluorosilyl)silane Chemical compound F[Si](F)(F)[Si](F)(F)F SDNBGJALFMSQER-UHFFFAOYSA-N 0.000 abstract description 4
- 229910007264 Si2H6 Inorganic materials 0.000 abstract description 3
- 229910007260 Si2F6 Inorganic materials 0.000 abstract 1
- 230000003190 augmentative effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 2
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 2
- 229910052986 germanium hydride Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006757 chemical reactions by type Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- XPBBUZJBQWWFFJ-UHFFFAOYSA-N fluorosilane Chemical compound [SiH3]F XPBBUZJBQWWFFJ-UHFFFAOYSA-N 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光電変換素子（太陽電池、電子写真、センサー
、トランジスター）や熱電変換素子（熱電池、センサー
）として有用なａ−８：ｌＧｅ薄膜の製造法に関するも
のであり、特に任意の光学的エネルギーギャップを有し
、且つ光電特性の良好な膜を容易に得ることを目的とす
るものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention provides an a-8:lGe thin film useful as a photoelectric conversion element (solar cell, electrophotography, sensor, transistor) or a thermoelectric conversion element (thermal battery, sensor). The present invention relates to a manufacturing method, and particularly aims at easily obtaining a film having an arbitrary optical energy gap and good photoelectric properties.
近年５ｉＧｅ薄膜はその光吸収波長瑞が、長波長側にあ
り、多用途にその良質なものが求められている。しかし
５ｉＧｅ薄膜は一般にシランガス（ＳｉＨ４）とゲルマ
ンガス（ＧｅＨ４）との組合せから作製されているが、
所定の光学的エネルギーを有する膜を再現性良く作製す
ることが回部であり、しかも光電特性の良好な膜は得ら
れにくかった。In recent years, the light absorption wavelength of 5iGe thin films is on the long wavelength side, and high quality 5iGe thin films are required for a variety of uses. However, 5iGe thin films are generally made from a combination of silane gas (SiH4) and germane gas (GeH4);
The challenge is to produce a film having a predetermined optical energy with good reproducibility, and it has been difficult to obtain a film with good photoelectric properties.
また５ｉ）ｆ４ガスは空気中で激しく燃焼する発火性の
ガスであシ、ＧｅＨ４ガスも高温になると分解しやすい
ガスであることから取扱いにも難がある。Furthermore, 5i) F4 gas is an ignitable gas that burns violently in the air, and GeH4 gas is also difficult to handle because it easily decomposes at high temperatures.
本発明はかかる従来の製膜法の欠点を一掃するものであ
る。The present invention eliminates the drawbacks of such conventional film forming methods.
すなわち本発明は
（ａ） −ｆｆ式５ｉＨｎＦ４−ｎ （ｎ ； Ｏ〜
３ ）で衣わされる含フツ素シラン、
（ｂ） これより少量のＳｉＨ４、Ｓｉ２Ｈ６、Ｓ１
□Ｆ６のうちの少くとも１種、および
（ｃ） ＧｅＦ４とＨ３を含む混合ガスを用いること
を特徴とするフッ素系シリコンゲルマニウム薄膜の製造
法である。That is, the present invention provides (a) -ff formula 5iHnF4-n (n; O~
3) fluorine-containing silane coated with (b) smaller amounts of SiH4, Si2H6, S1
□This is a method for producing a fluorine-based silicon germanium thin film characterized by using a mixed gas containing at least one type of F6 and (c) GeF4 and H3.
本発明においては、シリコン源としてＳｉＦ、、ＳｉＨ
Ｆ３．８１ＨｚＦｘ、およびＳｉＨ，Ｆ’のフルオロシ
ラン類を用いるものであり、これらのガスはいずれも安
全性の高いガスでおシ、取扱上特に注意を要することは
ない。本発明においては、これらのフルオロシラン類に
対し、これよシもプラズマ雰囲気下において分解し易い
ガスを第二のシリコン源として用いるものである。これ
より分解し易いガスとしては、具体的にはシラン（Ｓｉ
Ｈ４）、ジシラン（８１４Ｈｇ）、ヘキサフルオロジシ
ラン（ＳｉｚＦｓ）が挙げられ、特に、第一のシリコン
源としてＳｉｔ。In the present invention, the silicon source is SiF, SiH.
F3.81HzFx, SiH, and F' fluorosilanes are used, and these gases are all highly safe gases and do not require special care in handling. In the present invention, a gas that is more easily decomposed in a plasma atmosphere than these fluorosilanes is used as the second silicon source. Specifically, a gas that is easier to decompose is silane (Si
H4), disilane (814Hg), hexafluorodisilane (SizFs), in particular Sit as the first silicon source.
を用いる場合には、第二のシリコン源としてヘキサフル
オロジシラン（ＳｉｚＦｓ ）も有効である。When using SizFs, hexafluorodisilane (SizFs) is also effective as the second silicon source.
また、Ｇｅ源としてはＧｅＦ４を用い、これらのガスに
更にＨ！を添加した混合ガスを使用する。In addition, GeF4 is used as the Ge source, and H! is added to these gases. Use a mixed gas with added
本発明者らは、ＳｉＦ４．５ｉＨＦ８、Ｓｉｎ、Ｆ、お
よびＳｉＨ，Ｆのフルオロシラン類をシリコン源として
用い、ゲルマニウム源としてＧｅＦ４を用い、更に、こ
れにＨ３を添加した混合ガスを用いてプラズマＣｖＤを
おこなって得た腺は元″を特性が良好であり、特に光学
的禁制帯幅１．５ｅＶ付近での光電特性に優れているこ
とを見い出した。しかし、膜の形成速度が必ずしも十分
でなく、工業的な製膜とは言い難い。The present inventors used fluorosilanes such as SiF4.5iHF8, Sin, F, and SiH,F as a silicon source, GeF4 as a germanium source, and further used a mixed gas containing H3 to perform plasma CVD. We found that the glands obtained by this process had good properties, especially in the photoelectric properties near the optical forbidden band width of 1.5 eV. However, the film formation rate was not necessarily sufficient. , it can hardly be called industrial film formation.
本発明においては、シリコン源としてフルオロシラン以
外に更に、これより少量のシラン（ＳｉＨ４）、ジシラ
ン（Ｓｉ！Ｈａ）、ヘキサフルオロジシラン（ＳｉｚＦ
ｓ）を添加することにより、ｊｔ、１１特性を荷に落と
すことなく堆積速度を飛躍的に大きくすることができる
ものである。In the present invention, in addition to fluorosilane, smaller amounts of silane (SiH4), disilane (Si!Ha), and hexafluorodisilane (SizF) are used as silicon sources.
By adding s), the deposition rate can be dramatically increased without compromising the jt, 11 characteristics.
本発明においては、ゲルマニウム源としでＧｅＦ４を用
い、また水素ガスを併用するものであるが、このほかに
ヘリウム、アルゴン、ネオン、キセノン等の希ガス類を
併用してもよい。また、フルオロシラン類と併用して用
いるシラン、ジシランの量は、シリコン源全体の０．１
％から５０％までの範囲が好ましく、より好ましくは、
０．５チから２０％までの範囲である。これより少ない
と、シラン、ジシランの併用の効果が少なく、膜形成速
度の増大が図れない。また、これより多いと良好な光電
物性が得られない。In the present invention, GeF4 is used as a germanium source, and hydrogen gas is used in combination, but rare gases such as helium, argon, neon, and xenon may also be used in combination. In addition, the amount of silane and disilane used in combination with fluorosilanes is 0.1 of the total silicon source.
% to 50%, more preferably,
It ranges from 0.5 inch to 20%. If the amount is less than this, the effect of using silane and disilane in combination will be small and it will not be possible to increase the film formation rate. Moreover, if the amount is more than this, good photoelectric properties cannot be obtained.
また、ＳｉＦ、と併用してＳｉ！Ｆ＠を用いる場合には
、ド限は、シラン、ジシランを用いる場合と同様である
が、上限については特に制限はない。Also, Si! can be used in combination with SiF! When using F@, the limit is the same as when using silane or disilane, but there is no particular restriction on the upper limit.
本発明の原料ガスの組合せにおいては、容易に光学的禁
制帯幅の制御が可能であり、例えば原料ガス中のゲルマ
ニウムの量を大きくすると、光学的禁制帯幅は狭くなる
。また、混合ガスの流量を大きくするか、放電電力を小
さくすると狭くなる。これらの条件を適宜選択して所望
の光学的禁制帯幅の膜を得ることができる。In the raw material gas combination of the present invention, the optical forbidden band width can be easily controlled; for example, when the amount of germanium in the raw material gas is increased, the optical forbidden band width becomes narrower. In addition, if the flow rate of the mixed gas is increased or the discharge power is decreased, the width becomes narrower. By appropriately selecting these conditions, a film having a desired optical bandgap width can be obtained.
展形成は通常のグロー放電可能な反応型中にａ−８ｉＧ
ｅ膜を形成すべき単結晶シリコン、ガラス、ステンレス
スチール、セラミックマたはそれらの異面に導電住換を
コーティングしたもの等の基板を配置する。ついで原料
の混合ガスを該反応室内に供給しつつ、放電エネルギー
を与え、減圧下に該基板上にａ−８ｉＧｅ膜を形成する
ものである。Expansion formation is a-8iG in a reaction type capable of normal glow discharge.
A substrate, such as single crystal silicon, glass, stainless steel, ceramic material, or a substrate coated with a conductive material on a different surface thereof, on which the e-film is to be formed is arranged. Next, while supplying a mixed gas of raw materials into the reaction chamber, discharge energy is applied to form an a-8iGe film on the substrate under reduced pressure.
ａ −５ｉＧｅ膜の形成速度は、主として原料ガス組成
比、ガス流量、圧力、族１！電力に依存し、流量、圧力
、放電電力のいずれかを犬とすることで膜の形成速度は
大となるが、ガス流量、放電電力を大きくすると、光学
内素１ｔｔｌＪ帯幅のコントロールが困峻となり圧力を
大きくすることにより、膜買の低下を招き、好ましくな
い。また、これらの条件を通常行なわれる範囲内で変化
させることによる膜形成速度の増大には限度があ夛、必
ずしも十分なものではない。これに対し、本発明におい
てはシリコン源としてシラン、ジシランを添加するのみ
でかかる不都合を排除でき、しかも光電特性も良好な膜
を容易に得ることができるものである。The formation rate of the a-5iGe film is mainly determined by the raw material gas composition ratio, gas flow rate, pressure, and Group 1! It depends on the electric power, and the film formation speed can be increased by adjusting the flow rate, pressure, or discharge power, but if the gas flow rate or discharge power is increased, it becomes difficult to control the optical element 1ttlJ bandwidth. Therefore, increasing the pressure will lead to a decrease in membrane resistance, which is undesirable. Furthermore, there are many limits to increasing the film formation rate by changing these conditions within the usual range, and it is not necessarily sufficient. In contrast, in the present invention, such disadvantages can be eliminated by simply adding silane or disilane as a silicon source, and a film with good photoelectric properties can also be easily obtained.
得られるａ −５ｉＧｅ薄膜の半導体特性は、上記の原
料ガス組成比、流量、圧力、放電電力および基板温度等
の因子によｐ変化するが、原料ガス中のゲルマニウム比
率が小さく流量を犬とすることにより、光を特性を良好
にできる。また、基板温度は２００〜３５０ ℃の範囲
が好ましい。The semiconductor properties of the obtained a-5iGe thin film vary depending on factors such as the above-mentioned source gas composition ratio, flow rate, pressure, discharge power, and substrate temperature, but the germanium ratio in the source gas is small and the flow rate is low. By doing so, the characteristics of the light can be improved. Further, the substrate temperature is preferably in the range of 200 to 350°C.
実施例１．２．３、比較例１
ＳｉＦ４−８ｉＨ，−ＧｅＦ４−Ｈ，の混合ガスを用い
、１３．５６ＭＨｚ高周波電源を有するプラズマＣＶＤ
装置にて、全ガス流量５５ＳＯＯＭ、基板温度３００℃
、放電電力密度０ 、 Ｉ ３ ｗ／ｉ、ガス圧力２０
０７ｎＴＯｒｒの条件でコーニング７０５９ガラス基板
上に膜形成をおこなった。（実施例１．２）また比較の
ため同−条件にてＳｉＦ４−（）８Ｆ４−Ｈｌの混合ガ
スを用いて、成膜をおこなった。また同−条件で５ｉＦ
４−８ｉ、Ｆ、 −ＧｅＦ４−Ｈ，のガスを用いて成膜
をおこなった。Example 1.2.3, Comparative Example 1 Plasma CVD using a mixed gas of SiF4-8iH, -GeF4-H and having a 13.56MHz high frequency power source
In the device, the total gas flow rate was 55SOOM, and the substrate temperature was 300℃.
, discharge power density 0, I 3 w/i, gas pressure 20
A film was formed on a Corning 7059 glass substrate under conditions of 0.07 nTOrr. (Example 1.2) For comparison, film formation was performed under the same conditions using a mixed gas of SiF4-()8F4-Hl. Also under the same conditions 5iF
The film was formed using a gas of 4-8i, F, -GeF4-H,.
（実施例３）これらのガス組成および、得られた膜の光
学的禁制帯幅、膜堆積速度、光導電率、暗導を率の測定
結果をｌＸ１表に示す。（Ｈｅ−Ｎｅレーザー６３２．
８ ｍ、３００μＷ／ｃｒＩｉで測定）（以下余ロー、
−シ
１’−１ｊ
第 １ 表
このように、比較例１のＳｉＦ４ Ｇｅ１４ Ｈｌの系
では、光電特性は良好であるが、換の堆積速度が十分で
ない、これに対し実施例１ではＳｉＦ４の約１／１００
、実施？ｌＪ ２では豹２／１００ ｔ−よシ分解し易
いＳｉＨ４を混入させるのみで、堆積速度が２倍以上に
増加した。(Example 3) These gas compositions and the measurement results of the optical bandgap, film deposition rate, photoconductivity, and dark conductivity of the obtained films are shown in Table 1X1. (He-Ne laser 632.
8 m, measured at 300μW/crIi) (hereinafter referred to as "Yuro")
-Si1'-1j Table 1 As described above, the SiF4 Ge14 Hl system of Comparative Example 1 has good photoelectric properties, but the deposition rate of SiF4 is not sufficient. 1/100
,implementation? In lJ2, the deposition rate was increased by more than twice by simply adding SiH4, which is more easily decomposed than 2/100 t-.
実施例４、比較例２
実施例］と同一条件にてＳｉＨ’Ｆ３−８ｉＨ４−Ｇｅ
Ｆ４−Ｈ２の混合ガスによシ膜形成をおこなった。また
比較のために５ｉＨＦ１−ＧｅＦ４−Ｈｌの混合ガスを
用いて成膜をおこなった。（ただし、全ガス流量は６０
ＳＯＣＭ）
この結果を第２表に示す。このように堆積速度に著しい
差がある。Example 4, Comparative Example 2 SiH'F3-8iH4-Ge under the same conditions as Example]
Film formation was performed using a mixed gas of F4-H2. For comparison, film formation was performed using a mixed gas of 5iHF1-GeF4-Hl. (However, the total gas flow rate is 60
SOCM) The results are shown in Table 2. There is thus a significant difference in deposition rate.
第２表
実施例５．６、比較例３
実施例】の装置を用い放電電力密度を０．０７’ＩＩＡ
ｒａとする以外は同様の条件によシ、ＳｉＨ，Ｆ’、
−８ｉＨ，−ＧｅＦ４Ｈｚ（実施例５）、Ｓｉ、Ｈ３Ｐ
、−！９１．Ｈ６−ＧｅＦ４−Ｈ，（実施例６）の混合
ガスにより成膜を行なった。また比較のために５ｉＨ２
Ｆ、−ＧｅＦ４−Ｈ２の混合ガスについて成膜を行なっ
た。Table 2 Example 5.6, Comparative Example 3 Using the device in Example, the discharge power density was 0.07'IIA.
SiH, F', under the same conditions except for ra.
-8iH, -GeF4Hz (Example 5), Si, H3P
,-! 91. Film formation was performed using a mixed gas of H6-GeF4-H (Example 6). Also for comparison 5iH2
Film formation was performed using a mixed gas of F, -GeF4-H2.
この結果を第３表に示すが、堆積速度に大きな差が生じ
た。The results are shown in Table 3, and a large difference occurred in the deposition rate.
第 ３ 表
実施例７、比較νす４．５．６
実施例１の装置を用い同様の条件でＳｉＨ３Ｆ−ＳｉＨ
４−ＧｅＦ４− Ｈ，の混合ガスによシ成膜を行なった
。また比較のために５ｉＨ３Ｆ−ＧｅＦ４−Ｈ，の混合
ガスについて成膜を行なった。（比較例４）また、５ｉ
Ｈ４−ＧｅＨ４−Ｈ，の混合ガスにより成膜を行なった
（条件は２００Ｆ７ｔＴＯｒｒ、３００℃、０．０３Ｗ
／ｃｎｉ）（比較例５）。さらにまた５ｉＦ４−８ｉＨ
４−ＧｅＨ４−Ｈ２の混合ガスにより成膜を行なった。Table 3 Example 7, Comparison 4.5.6 SiH3F-SiH using the apparatus of Example 1 and under the same conditions.
The film was formed using a mixed gas of 4-GeF4-H. For comparison, a film was formed using a mixed gas of 5iH3F-GeF4-H. (Comparative Example 4) Also, 5i
Film formation was performed using a mixed gas of H4-GeH4-H (conditions were 200F7tTorr, 300℃, 0.03W
/cni) (Comparative Example 5). Furthermore, 5iF4-8iH
Film formation was performed using a mixed gas of 4-GeH4-H2.
（条件は２００ ｍ’ｒｏｒｒ、 ３００℃、Ｏ，Ｉ３
Ｗ／ｉ）第 ４ 表
比較例６においては堆積速度は大きいが、光導ｘｉが低
く、良好な光電物性は得られなかった。(Conditions are 200 m'rorr, 300℃, O, I3
W/i) Table 4 In Comparative Example 6, the deposition rate was high, but the light guide xi was low and good photoelectric properties could not be obtained.
特許出願人 セントラル硝子株式会社； ・ −・ ｆｌ １ を警□−２ＪPatent applicant: Central Glass Co., Ltd.; fl 1 Police□-2J
Claims (1)
表わされる含フッ素シラン、 （ｂ）これより少量のＳｉＨ＿４、Ｓｉ＿２Ｈ＿■、Ｓ
ｉ＿２Ｆ＿６のうち少くとも１種、および （ｃ）ＧｅＦ＿４とＨ＿２を含む混合ガスを用いること
を特徴とするフッ素系シリコンゲルマニウム薄膜の製造
法。(1) In the glow discharge method, (a) a fluorine-containing silane represented by the general formula SiHnF_4_-_n (n; 0 to 3), (b) smaller amounts of SiH_4, Si_2H_■, S
A method for producing a fluorine-based silicon germanium thin film, the method comprising using at least one type of i_2F_6 and (c) a mixed gas containing GeF_4 and H_2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61176645A JPS6333874A (en) | 1986-07-29 | 1986-07-29 | Manufacture of fluorinated silicon germanium thin-film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61176645A JPS6333874A (en) | 1986-07-29 | 1986-07-29 | Manufacture of fluorinated silicon germanium thin-film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6333874A true JPS6333874A (en) | 1988-02-13 |
Family
ID=16017202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61176645A Pending JPS6333874A (en) | 1986-07-29 | 1986-07-29 | Manufacture of fluorinated silicon germanium thin-film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6333874A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02260666A (en) * | 1989-03-31 | 1990-10-23 | Mitsubishi Electric Corp | Manufacture of amorphous solar cell |
-
1986
- 1986-07-29 JP JP61176645A patent/JPS6333874A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02260666A (en) * | 1989-03-31 | 1990-10-23 | Mitsubishi Electric Corp | Manufacture of amorphous solar cell |
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