JPS6452069A - Method for synthesizing aluminum nitride film at high speed - Google Patents
Method for synthesizing aluminum nitride film at high speedInfo
- Publication number
- JPS6452069A JPS6452069A JP20639887A JP20639887A JPS6452069A JP S6452069 A JPS6452069 A JP S6452069A JP 20639887 A JP20639887 A JP 20639887A JP 20639887 A JP20639887 A JP 20639887A JP S6452069 A JPS6452069 A JP S6452069A
- Authority
- JP
- Japan
- Prior art keywords
- high speed
- temp
- gaseous
- substrate
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To synthesize a high density AlN film at a high speed by separately feeding vapor of an Al halide and gaseous NH3 and specifying the temp. range of the outlet of a nozzle for feeding the gases and the temp. of a substrate. CONSTITUTION:A vaporizer 2 is placed in a thermostatic chamber 3 and vapor of an Al halide such as AlCl3 1 in the vaporizer 2 is fed into an inner tube provided with a ribbon heater 4 by means of gaseous H2 as a carrier. Gaseous NH3 is fed through an outer tube. A Nichrome heater 5 is placed around the double tube for feeding the gases to set the temp. of the outlet of the nozzle 9 close to a substrate 8 at 150-350 deg.C. The temp. of the substrate 8 is set at >=500 deg.C. Thus, an AlN film can be synthesized at a high speed by CVD.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20639887A JPS6452069A (en) | 1987-08-21 | 1987-08-21 | Method for synthesizing aluminum nitride film at high speed |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20639887A JPS6452069A (en) | 1987-08-21 | 1987-08-21 | Method for synthesizing aluminum nitride film at high speed |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6452069A true JPS6452069A (en) | 1989-02-28 |
Family
ID=16522695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20639887A Pending JPS6452069A (en) | 1987-08-21 | 1987-08-21 | Method for synthesizing aluminum nitride film at high speed |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6452069A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007015404A1 (en) * | 2005-08-03 | 2007-02-08 | Nippon Light Metal Company, Ltd. | PROCESS FOR PRODUCING AlN SEMICONDUCTOR AND APPARATUS FOR PRODUCING AlN SEMICONDUCTOR |
JP2010228965A (en) * | 2009-03-27 | 2010-10-14 | Shin-Etsu Chemical Co Ltd | Corrosion resistant member |
JP2018135603A (en) * | 2018-03-22 | 2018-08-30 | プラサド ナーハー ガジル | Low-temperature deposition method of ceramic thin film |
-
1987
- 1987-08-21 JP JP20639887A patent/JPS6452069A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007015404A1 (en) * | 2005-08-03 | 2007-02-08 | Nippon Light Metal Company, Ltd. | PROCESS FOR PRODUCING AlN SEMICONDUCTOR AND APPARATUS FOR PRODUCING AlN SEMICONDUCTOR |
JP2007042847A (en) * | 2005-08-03 | 2007-02-15 | Tokyo Univ Of Agriculture & Technology | PROCESS AND EQUIPMENT FOR PRODUCING AlN SEMICONDUCTOR |
JP2010228965A (en) * | 2009-03-27 | 2010-10-14 | Shin-Etsu Chemical Co Ltd | Corrosion resistant member |
JP2018135603A (en) * | 2018-03-22 | 2018-08-30 | プラサド ナーハー ガジル | Low-temperature deposition method of ceramic thin film |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4747368A (en) | Chemical vapor deposition apparatus with manifold enveloped by cooling means | |
US4421592A (en) | Plasma enhanced deposition of semiconductors | |
GB2141444A (en) | Chemical vapor deposition of titanium nitride and like films | |
GB2089840A (en) | Chemical vapour deposition apparatus incorporating radiant heat source for substrate | |
JPS6452069A (en) | Method for synthesizing aluminum nitride film at high speed | |
JPS6436085A (en) | Method and apparatus for forming functional deposition film by microwave plasma cvd method | |
GB1105870A (en) | Manufacture of silicon carbide ribbons | |
JPS5623736A (en) | Vapor phase growing method | |
JPS5713746A (en) | Vapor-phase growing apparatus | |
SE9500325D0 (en) | Device for heat shielding when SiC is grown by CVD | |
JP2619888B2 (en) | Manufacturing method of aluminum nitride | |
JP2951769B2 (en) | Vapor phase growth equipment | |
JPS56161832A (en) | Gaseous phase treatment device | |
JPH0613256Y2 (en) | Reaction chamber gas introducer | |
JPS6489320A (en) | Vapor growth method | |
JPS6465100A (en) | Production of aluminum nitride whisker | |
JPS56169320A (en) | Silicon carbide semiconductor | |
JPS5676240A (en) | Quartz reaction tube for treatment of semiconductor | |
JPH038797A (en) | Method for synthesizing diamond in vapor phase under pressure | |
JPS5629337A (en) | Formation of silicon nitride film | |
JPH0341723A (en) | Thin-film manufacture apparatus | |
JPH01259524A (en) | Vapor phase epitaxy method of compound semiconductor | |
JPS632442Y2 (en) | ||
JPS57196710A (en) | Plasma vapor phase method | |
JPS60253212A (en) | Vapor growth device |