JPS6452069A - Method for synthesizing aluminum nitride film at high speed - Google Patents

Method for synthesizing aluminum nitride film at high speed

Info

Publication number
JPS6452069A
JPS6452069A JP20639887A JP20639887A JPS6452069A JP S6452069 A JPS6452069 A JP S6452069A JP 20639887 A JP20639887 A JP 20639887A JP 20639887 A JP20639887 A JP 20639887A JP S6452069 A JPS6452069 A JP S6452069A
Authority
JP
Japan
Prior art keywords
high speed
temp
gaseous
substrate
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20639887A
Other languages
Japanese (ja)
Inventor
Tatsuyoshi Kaya
Toshio Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd filed Critical Asahi Chemical Industry Co Ltd
Priority to JP20639887A priority Critical patent/JPS6452069A/en
Publication of JPS6452069A publication Critical patent/JPS6452069A/en
Pending legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To synthesize a high density AlN film at a high speed by separately feeding vapor of an Al halide and gaseous NH3 and specifying the temp. range of the outlet of a nozzle for feeding the gases and the temp. of a substrate. CONSTITUTION:A vaporizer 2 is placed in a thermostatic chamber 3 and vapor of an Al halide such as AlCl3 1 in the vaporizer 2 is fed into an inner tube provided with a ribbon heater 4 by means of gaseous H2 as a carrier. Gaseous NH3 is fed through an outer tube. A Nichrome heater 5 is placed around the double tube for feeding the gases to set the temp. of the outlet of the nozzle 9 close to a substrate 8 at 150-350 deg.C. The temp. of the substrate 8 is set at >=500 deg.C. Thus, an AlN film can be synthesized at a high speed by CVD.
JP20639887A 1987-08-21 1987-08-21 Method for synthesizing aluminum nitride film at high speed Pending JPS6452069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20639887A JPS6452069A (en) 1987-08-21 1987-08-21 Method for synthesizing aluminum nitride film at high speed

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20639887A JPS6452069A (en) 1987-08-21 1987-08-21 Method for synthesizing aluminum nitride film at high speed

Publications (1)

Publication Number Publication Date
JPS6452069A true JPS6452069A (en) 1989-02-28

Family

ID=16522695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20639887A Pending JPS6452069A (en) 1987-08-21 1987-08-21 Method for synthesizing aluminum nitride film at high speed

Country Status (1)

Country Link
JP (1) JPS6452069A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007015404A1 (en) * 2005-08-03 2007-02-08 Nippon Light Metal Company, Ltd. PROCESS FOR PRODUCING AlN SEMICONDUCTOR AND APPARATUS FOR PRODUCING AlN SEMICONDUCTOR
JP2010228965A (en) * 2009-03-27 2010-10-14 Shin-Etsu Chemical Co Ltd Corrosion resistant member
JP2018135603A (en) * 2018-03-22 2018-08-30 プラサド ナーハー ガジル Low-temperature deposition method of ceramic thin film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007015404A1 (en) * 2005-08-03 2007-02-08 Nippon Light Metal Company, Ltd. PROCESS FOR PRODUCING AlN SEMICONDUCTOR AND APPARATUS FOR PRODUCING AlN SEMICONDUCTOR
JP2007042847A (en) * 2005-08-03 2007-02-15 Tokyo Univ Of Agriculture & Technology PROCESS AND EQUIPMENT FOR PRODUCING AlN SEMICONDUCTOR
JP2010228965A (en) * 2009-03-27 2010-10-14 Shin-Etsu Chemical Co Ltd Corrosion resistant member
JP2018135603A (en) * 2018-03-22 2018-08-30 プラサド ナーハー ガジル Low-temperature deposition method of ceramic thin film

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