JPS6465100A - Production of aluminum nitride whisker - Google Patents

Production of aluminum nitride whisker

Info

Publication number
JPS6465100A
JPS6465100A JP62081769A JP8176987A JPS6465100A JP S6465100 A JPS6465100 A JP S6465100A JP 62081769 A JP62081769 A JP 62081769A JP 8176987 A JP8176987 A JP 8176987A JP S6465100 A JPS6465100 A JP S6465100A
Authority
JP
Japan
Prior art keywords
powder
gaseous
vessel
reactor
aln whisker
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62081769A
Other languages
Japanese (ja)
Inventor
Kenji Tsukamoto
Eizo Isoyama
Noriyasu Hotta
Isao Kimura
Kafuu Saitou
Kenji Ichiya
Akito Chikuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Aluminum Can Corp
Original Assignee
Showa Aluminum Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Aluminum Corp filed Critical Showa Aluminum Corp
Priority to JP62081769A priority Critical patent/JPS6465100A/en
Publication of JPS6465100A publication Critical patent/JPS6465100A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To produce AlN whisker using Al powder by a convenient process in good yield by heating and evaporating Al powder in gaseous N2 and causing a gaseous phase reaction. CONSTITUTION:A tubular reactor 1 is constituted of a heat resistant material such as alumina, etc., and a vessel for the Al powder is connected to a foot end of the reactor. A feeding port of gaseous N2 is opened on the Al powder vessel and an agitator for stirring the Al powder contained in the vessel is installed to the inside of the vessel. The Al powder is floated on the gaseous N2 stream and transported into the reaction tube 1. The Al powder is evaporated by the quick heating with a heater 2 and reacts in gaseous phase with gaseous N2 depositing as AlN whisker to the internal wall surface of the reactor. When deposited amt. reaches a predetermined amt., the flow rate of gaseous N2 is increased temporarily to blow off the AlN whisker A and to transport to a collector 3.
JP62081769A 1987-04-01 1987-04-01 Production of aluminum nitride whisker Pending JPS6465100A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62081769A JPS6465100A (en) 1987-04-01 1987-04-01 Production of aluminum nitride whisker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62081769A JPS6465100A (en) 1987-04-01 1987-04-01 Production of aluminum nitride whisker

Publications (1)

Publication Number Publication Date
JPS6465100A true JPS6465100A (en) 1989-03-10

Family

ID=13755670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62081769A Pending JPS6465100A (en) 1987-04-01 1987-04-01 Production of aluminum nitride whisker

Country Status (1)

Country Link
JP (1) JPS6465100A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018154533A (en) * 2017-03-17 2018-10-04 国立大学法人名古屋大学 Sintered body and production method thereof
JP2018154535A (en) * 2017-03-17 2018-10-04 国立大学法人名古屋大学 MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF AlN WHISKER, AND AlN WHISKER STRUCTURE
CN109505010A (en) * 2018-12-27 2019-03-22 河北工业大学 A kind of preparation method of aluminum-nitride single crystal whisker
CN110431259A (en) * 2017-03-17 2019-11-08 国立大学法人名古屋大学 The manufacturing method and manufacturing device of AlN whisker, AlN whisker structure body and AlN whisker and resin-formed body and its manufacturing method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018154533A (en) * 2017-03-17 2018-10-04 国立大学法人名古屋大学 Sintered body and production method thereof
JP2018154535A (en) * 2017-03-17 2018-10-04 国立大学法人名古屋大学 MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF AlN WHISKER, AND AlN WHISKER STRUCTURE
CN110431259A (en) * 2017-03-17 2019-11-08 国立大学法人名古屋大学 The manufacturing method and manufacturing device of AlN whisker, AlN whisker structure body and AlN whisker and resin-formed body and its manufacturing method
CN110431259B (en) * 2017-03-17 2021-12-28 国立大学法人名古屋大学 Method and apparatus for producing AlN whiskers, AlN whisker structure, AlN whiskers, and resin molded body and method for producing same
US11345640B2 (en) 2017-03-17 2022-05-31 National University Corporation Nagoya University Method and apparatus for producing AlN whiskers, AlN whisker bodies, AlN whiskers, resin molded body, and method for producing resin molded body
US11939267B2 (en) 2017-03-17 2024-03-26 National University Corporation Nagoya University Method and apparatus for producing AlN whiskers, AlN whisker bodies, AlN whiskers, resin molded body, and method for producing resin molded body
CN109505010A (en) * 2018-12-27 2019-03-22 河北工业大学 A kind of preparation method of aluminum-nitride single crystal whisker

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