CN214736208U - Sublimation gaseous phase material separator - Google Patents
Sublimation gaseous phase material separator Download PDFInfo
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- CN214736208U CN214736208U CN202120795565.9U CN202120795565U CN214736208U CN 214736208 U CN214736208 U CN 214736208U CN 202120795565 U CN202120795565 U CN 202120795565U CN 214736208 U CN214736208 U CN 214736208U
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- graphite crucible
- air inlet
- feeding channel
- cavity
- phase material
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- 239000000463 material Substances 0.000 title claims abstract description 57
- 238000000859 sublimation Methods 0.000 title abstract description 14
- 230000008022 sublimation Effects 0.000 title abstract description 14
- 239000007792 gaseous phase Substances 0.000 title description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 45
- 239000010439 graphite Substances 0.000 claims abstract description 45
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 238000011084 recovery Methods 0.000 claims abstract description 14
- 230000007246 mechanism Effects 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 10
- 239000012808 vapor phase Substances 0.000 claims description 9
- 239000012071 phase Substances 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 4
- 239000000945 filler Substances 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 17
- 239000013078 crystal Substances 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
Abstract
The utility model relates to a sublimed gas phase substance separating device, which comprises a cavity, a graphite crucible, a recovery tank, a laser module and a heating mechanism; the upper end of the cavity is communicated with the feeding channel, the graphite crucible is arranged below the feeding channel, and the recovery tank is arranged below the graphite crucible; an exhaust port and a plurality of air inlet pipes are respectively arranged on two opposite side walls of the graphite crucible, and the exhaust port and the air inlet pipes are communicated to the outside of the cavity; the bottom of the graphite crucible is provided with a discharge port leading to the recovery tank, and the discharge port is arranged close to one side of the exhaust port; the ray of the laser module points to the outlet of the feeding channel; the heating mechanism is used for heating the graphite crucible and the air inlet pipe. The utility model discloses to the portable heating of source material for the source material heating is more even, more does benefit to its sublimation, and source material utilization ratio is higher, and sublimation efficiency is higher. The device separates the source materials in different states, is convenient to recycle, and reduces the cost of the source materials. Furthermore, the utility model discloses simple structure, the preparation material is common, and equipment cost is low.
Description
Technical Field
The utility model relates to a crystal ingot growth technical field especially relates to a gaseous phase material separator sublimates.
Background
The main mass production technology of the silicon carbide (SiC) single crystal ingot at present is a seed crystal sublimation method (PVT), which heats a silicon carbide solid source material under a vacuum environment to enable the silicon carbide solid source material to generate sublimation gas phase substances, wherein the main gas phase substances are Si and Si2C、SC2. And transporting gas to the seed crystal position to solidify the gas-phase substance by transporting gas to grow the single crystal ingot. The growth temperature of the source material in PVT is 2300-2400 ℃, and the temperature cannot inhibit the preferential evaporation of silicon in the silicon carbide source material, so that the graphite of the silicon carbide source material is vitrified in the sublimation growth process, the growth source material is in an exhausted state, the utilization rate of the source material is low, and the method is one-step feeding, so that the growth size of an ingot is limited.
PVT was modified to produce large size ingots to yield a high temperature chemical vapor deposition process in which silicon carbide ingots are grown in a vertical graphite crucible in which the precursor gas is transported upward and deposited after passage through a heated zone to the seed at the top. The high-temperature chemical vapor deposition method can continuously supply the precursor gas in principle, the source material cannot be exhausted, but the growth temperature is very high, so that the seed crystal and the graphite wall are easy to corrode or react with each other, and in addition, the cost of the carrier gas and the high-purity precursor gas is high, so that the product has no competitiveness and is not suitable for large-scale mass production.
SUMMERY OF THE UTILITY MODEL
Problem to prior art existence, the utility model aims to provide a sublimation gaseous phase material separator can be to the high-efficient utilization of source material, and the sublimation of source material is efficient, can separate the source material of different states, is convenient for retrieve and recycles to reduce source material cost.
In order to achieve the above object, the utility model adopts the following technical scheme:
a sublimation gas phase substance separation device comprises a cavity, a graphite crucible, a recovery tank, a laser module and a heating mechanism; the upper end of the cavity is communicated with the feeding channel, the graphite crucible is arranged below the feeding channel, and the recovery tank is arranged below the graphite crucible; an exhaust port and a plurality of air inlet pipes are respectively arranged on two opposite side walls of the graphite crucible, and the exhaust port and the air inlet pipes are communicated to the outside of the cavity; the bottom of the graphite crucible is provided with a discharge port leading to the recovery tank, and the discharge port is arranged close to one side of the exhaust port; the ray of the laser module points to the outlet of the feeding channel; the heating mechanism is used for heating the graphite crucible and the air inlet pipe.
Preferably, the outlet position of the feeding channel is further provided with a reflecting plate matched with the laser module.
Preferably, the angle between the reflecting plate and the horizontal plane is 45 degrees.
Preferably, the bottom of the graphite crucible is provided with a slope, and the slope is opposite to the feeding channel and faces the exhaust port.
Preferably, the angle between the slope and the horizontal plane is 30-60 degrees.
Preferably, the number of the air inlet pipes is two, and the two air inlet pipes are aligned up and down and are respectively arranged in the middle and at the highest position of the slope.
Preferably, the gas inlet pipe is a graphite pipe integrally formed with the graphite crucible.
Preferably, the heating mechanism comprises a radio frequency coil and a radio frequency power supply, two ends of the radio frequency coil are connected with two poles of the radio frequency power supply, and the radio frequency coil is wound on the peripheries of the graphite crucible and the air inlet pipe.
Preferably, the cavity is also internally provided with heat preservation filler.
After the scheme is adopted, the utility model discloses a laser module shines the graininess or the likepowder source material that enter into the cavity inside for the source material absorbs a large amount of laser energy and begins to sublimate, and the solid-state source material that does not sublimate temporarily drops graphite crucible and continues to heat, makes this part source material can be heated and continue to sublimate to sublimation point, and finally also the solid-state source material that does not sublimate then drops in the accumulator. The sublimated gas phase substance is mixed with the carrier gas introduced by the gas inlet pipe and is carried and discharged to the crystal ingot growing device for crystallization from the gas outlet. The utility model discloses to the portable heating of source material for the source material heating is more even, more does benefit to its sublimation, and source material utilization ratio is higher, and sublimation efficiency is higher. The device separates the source materials in different states, is convenient to recycle, and reduces the cost of the source materials. Furthermore, the utility model discloses simple structure, the preparation material is common, and equipment cost is low.
Drawings
Fig. 1 is a schematic view of the present invention.
Description of reference numerals:
a cavity 10;
a graphite crucible 20, an exhaust port 21, an air inlet pipe 22, a discharge port 23 and a slope 24;
a recovery tank 30;
a laser module 40;
a radio frequency coil 51;
a feed channel 60;
a reflection plate 70;
and (4) heat-insulating filler 80.
Detailed Description
As shown in fig. 1, the present invention discloses a separation device for sublimed gaseous substances, which comprises a chamber 10, a graphite crucible 20, a recovery tank 30, a laser module 40 and a heating mechanism, wherein the graphite crucible 20 and the recovery tank 30 are both disposed inside the chamber 10.
The upper end of the cavity 10 is communicated with the feeding channel 60, the graphite crucible 20 is arranged below the feeding channel 60, and the recovery tank 30 is arranged below the graphite crucible 20. An exhaust port 21 and two air inlet pipes 22 are respectively arranged on two opposite side walls of the graphite crucible 20, and the exhaust port 21 and the air inlet pipes 22 are communicated to the outside of the cavity 10. The gas inlet pipe 22 is used for introducing a carrier gas into the chamber 10, and the gas outlet 21 is an outlet through which a mixed gas of a sublimated vapor phase material and the carrier gas flows toward the ingot growing apparatus. A slope 24 and a discharge opening 23 leading to the recovery tank 30 are arranged at the bottom of the graphite crucible 20, the slope 24 is opposite to the feeding channel 60, the slope surface of the slope 24 faces the exhaust opening 21, and the included angle between the slope 24 and the horizontal plane is 30-60 degrees. The discharge opening 23 is disposed adjacent to the side of the exhaust opening 21 and at the bottom of the slope 24.
The inlet pipes 22 are graphite pipes formed integrally with the graphite crucible 20, and the two inlet pipes 22 are aligned up and down and disposed at the middle and the highest position of the slope 24, respectively. The purpose that intake pipe 22 set up to the graphite pipe is convenient for heat-conduction, and structural stability is good simultaneously, and the temperature transition of carrier gas can be more steady.
The laser module 40 is fixed on the side wall of the cavity 10, the laser ray points to the outlet of the feeding channel 60, a reflecting plate 70 matched with the laser module 40 is further arranged at the outlet of the feeding channel 60, and the included angle between the reflecting plate 70 and the horizontal plane is 45 degrees. The granular source material falling from the feed passage 60 first falls on the reflecting plate 70, and the laser irradiates the source material on the reflecting plate 70, and the source material absorbs a large amount of laser energy and starts to sublimate into a gaseous substance. The unabsorbed laser light is reflected by the reflection plate 70 into the feeding passage 60, and the source material in the feeding passage 60 can be preheated, so that the energy loss can be reduced.
The heating mechanism is used for heating the graphite crucible 20 and the air inlet pipe 22, the heating mechanism comprises a radio frequency coil 51 and a radio frequency power supply, two ends of the radio frequency coil 51 are connected with two poles of the radio frequency power supply, and the radio frequency coil 51 is wound on the peripheries of the graphite crucible 20 and the air inlet pipe 22. In addition, in order to reduce heat loss, a thermal insulation packing 80 is further provided inside the chamber 10.
The utility model discloses a key lies in, the utility model discloses a laser module 40 shines the graininess or the likepowder source material that enter into cavity 10 inside for the source material absorbs a large amount of laser energy and begins to sublimate, and the solid-state source material that does not sublimate temporarily drops graphite crucible 20 and continues the heating, makes this part source material can be heated to sublimation point and continues to sublimate, and the solid-state source material that does not finally also sublimate then drops in the accumulator 30. The sublimated vapor phase material is mixed with the carrier gas introduced by the gas inlet pipe 22 and carried to be discharged from the gas outlet 21 to the ingot growing apparatus for crystallization. The source material that drops at graphite crucible 20 rolls down along slope 24, absorbs the heat of graphite crucible 20 transmission in the roll in-process, through this kind of portable heating for the source material heating is more even, more does benefit to its sublimation, and the source material utilization ratio is higher, and sublimation efficiency is higher. The device separates the source materials in different states, is convenient to recycle, and reduces the cost of the source materials. Furthermore, the utility model discloses simple structure, the preparation material is common, and equipment cost is low.
The above description is only an embodiment of the present invention, and is not intended to limit the technical scope of the present invention, so that any slight modifications, equivalent changes and modifications made by the technical spirit of the present invention to the above embodiments are all within the scope of the technical solution of the present invention.
Claims (9)
1. A separation device for sublimed gas-phase substances is characterized in that: comprises a cavity, a graphite crucible, a recovery tank, a laser module and a heating mechanism; the upper end of the cavity is communicated with the feeding channel, the graphite crucible is arranged below the feeding channel, and the recovery tank is arranged below the graphite crucible; an exhaust port and a plurality of air inlet pipes are respectively arranged on two opposite side walls of the graphite crucible, and the exhaust port and the air inlet pipes are communicated to the outside of the cavity; the bottom of the graphite crucible is provided with a discharge port leading to the recovery tank, and the discharge port is arranged close to one side of the exhaust port; the ray of the laser module points to the outlet of the feeding channel; the heating mechanism is used for heating the graphite crucible and the air inlet pipe.
2. A sublimated vapor phase material separating apparatus as claimed in claim 1, wherein: and a reflecting plate matched with the laser module is further arranged at the outlet of the feeding channel.
3. A sublimated vapor phase material separating apparatus as claimed in claim 2, wherein: the reflecting plate and the horizontal plane form an included angle of 45 degrees.
4. A sublimated vapor phase material separating apparatus as claimed in claim 1, wherein: the bottom of the graphite crucible is provided with a slope, and the slope is opposite to the feeding channel and faces the exhaust port.
5. A sublimated vapor phase material separating apparatus as claimed in claim 4, wherein: the included angle between the slope and the horizontal plane is 30-60 degrees.
6. A separation apparatus of sublimated gaseous substances according to claim 4 or 5, wherein: the quantity of intake pipe is two, and two intake pipes align from top to bottom and set up respectively in the centre and the highest point on slope.
7. A sublimated vapor phase material separating apparatus as claimed in claim 1, wherein: the air inlet pipe is a graphite pipe which is integrally formed with the graphite crucible.
8. A sublimated vapor phase material separating apparatus as claimed in claim 1, wherein: the heating mechanism comprises a radio frequency coil and a radio frequency power supply, two ends of the radio frequency coil are connected with two poles of the radio frequency power supply, and the radio frequency coil is wound on the peripheries of the graphite crucible and the air inlet pipe.
9. A sublimated vapor phase material separating apparatus as claimed in claim 1, wherein: and the interior of the cavity is also provided with a heat-insulating filler.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120795565.9U CN214736208U (en) | 2021-04-19 | 2021-04-19 | Sublimation gaseous phase material separator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120795565.9U CN214736208U (en) | 2021-04-19 | 2021-04-19 | Sublimation gaseous phase material separator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214736208U true CN214736208U (en) | 2021-11-16 |
Family
ID=78603980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120795565.9U Active CN214736208U (en) | 2021-04-19 | 2021-04-19 | Sublimation gaseous phase material separator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214736208U (en) |
-
2021
- 2021-04-19 CN CN202120795565.9U patent/CN214736208U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211123 Address after: 100176 935, floor 9, building 2, yard 38, Kechuang Fifth Street, Beijing Economic and Technological Development Zone, Daxing District, Beijing Patentee after: Beijing libaosheng Technology Co.,Ltd. Address before: Room 501, 5th floor, 3749 Erhuan East Road, Licheng District, Jinan City, Shandong Province Patentee before: XINCAN semiconductor technology (Shandong) Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240522 Address after: 101300 North Wenhuaying Village, Shunyi District, Beijing (No. 1, Shunchuang Second Road) Patentee after: Beijing Changlong Zhixin Semiconductor Co.,Ltd. Country or region after: China Address before: 100176 935, floor 9, building 2, yard 38, Kechuang Fifth Street, Beijing Economic and Technological Development Zone, Daxing District, Beijing Patentee before: Beijing libaosheng Technology Co.,Ltd. Country or region before: China |