CN108588836A - Growing silicon carbice crystals thermal field rotating device - Google Patents
Growing silicon carbice crystals thermal field rotating device Download PDFInfo
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- CN108588836A CN108588836A CN201810616154.1A CN201810616154A CN108588836A CN 108588836 A CN108588836 A CN 108588836A CN 201810616154 A CN201810616154 A CN 201810616154A CN 108588836 A CN108588836 A CN 108588836A
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- crucible
- rotating device
- growing silicon
- heating
- field rotating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/063—Heating of the substrate
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention provides a kind of growing silicon carbice crystals thermal field rotating devices, it is related to carborundum crystals making apparatus technical field, including pedestal, gas supply tube assembly, crucible, heating and thermal insulation rotary components and induction coil, the top for supplying tube assembly is arranged through the bottom of crucible, and air supply pipe component internal is equipped with the air vent for being passed through process gas into crucible.Growing silicon carbice crystals thermal field rotating device provided by the invention, it changes traditional rotating crucible come by way of improving crystal symmetry, using through crucible bottom surface and support is fixed to crucible in the gas supply tube assembly affixed with crucible, by the rotation for being set to the heating and thermal insulation rotary components of crucible periphery, realize the effect for improving symmetry of crystals, since crucible remains static, keep the structure setting for being passed through gas to crucible more simple, it also avoids the internal gas convection current that crucible rotation is brought simultaneously crystal growth is caused to disturb, advantageously ensure that crystal quality.
Description
Technical field
The invention belongs to carborundum crystals making apparatus technical fields, are to be related to a kind of carborundum crystals more specifically
Grow thermal field rotating device.
Background technology
As third generation semi-conducting material, silicon carbide has the characteristics that broad-band gap, high breakdown electric field, high heat conductance, is applicable in
In high-frequency power device, high power device, high-temperature device and high-grade opto-electronic device.Crystal growth refers to raw material in high temperature height
In a solvent, due to temperature difference convection current, solution reaches supersaturation at seed crystal position and makes seeded growth for pressure dissolving.
PVT methods are current using most ripe most common method in silicon carbide monocrystal growth method.PVT growing methods be by
Raw material places crucible bottom, and seed crystal is placed on the top of raw material, raw material liter under 2200 DEG C or more of high temperature and environment under low pressure
China sublimates into the process approach of monocrystalline further according to the temperature gradient of raw material and seed crystal on seed crystal.PVT methods grow silicon carbide list
When brilliant, the general method for using sensing heating, when sensing heating, be susceptible to because keep the temperature it is asymmetric caused by habit it is not right
The problem of title, affects crystal quality, reduces the utilization rate of crystal.It is existing to be revolved together using crucible rotation or thermal field and crucible
Although the method turned can improve symmetry of crystals, influences the gaseous exchange in crucible there are crucible rotation and then influence crystal
The reproducibility of quality and technique, while being passed through process gas into the crucible of rotation and there are problems that seal structure complex, and answer
Miscellaneous sealing structure can impact the reliability and stability of system.
Invention content
The purpose of the present invention is to provide a kind of growing silicon carbice crystals thermal field rotating devices, to solve to deposit in the prior art
Crystals in Symmetry sex chromosome mosaicism and be passed through into rotation crucible the excessively complicated technical problem of sealing structure needed for gas.
To achieve the above object, the technical solution adopted by the present invention is：A kind of growing silicon carbice crystals thermal field rotation is provided
Device, including pedestal, the gas supply tube assembly affixed through pedestal and with pedestal, it is fixedly arranged on gas supply tube assembly top and for accommodating
The crucible of raw material, the heating and thermal insulation rotary components for being set to crucible periphery and being rotatably assorted with crucible and it is sheathed on heating and thermal insulation
Rotary components periphery and with the spaced induction coil of heating and thermal insulation rotary components, supply the top of tube assembly through crucible
Bottom is arranged, and air supply pipe component internal is equipped with the air vent for being passed through process gas into crucible.
As further optimization, heating and thermal insulation rotary components include the heating for being set to crucible periphery and opening upwards
Bucket, the insulation barrel for being fixedly arranged on heating bucket periphery and the rotation for being fixedly arranged on insulation barrel lower section periphery and being used to that insulation barrel to be driven to rotate
Drive component heats and is equipped with gap between bucket and crucible.
As further optimization, insulation barrel includes and the staving of opening upwards affixed with heating bucket and is set on staving
The lid of side.
As further optimization, it is additionally provided on lid for making the infrared ray that infrared radiation thermometer is sent out penetrate and thermometric
Through hole.
As further optimization, crucible includes and supplies earthenware tube assembly affixed crucible body and be set at the top of crucible body
Crucible lid.
As further optimization, gas supply tube assembly includes through the setting of heating and thermal insulation rotary components and top surface and crucible
The first affixed tube body of bottom surface and the second tube body being arranged through crucible body bottom.
As further optimization, the outer diameter of the first tube body is more than the outer diameter of the second tube body, and the internal diameter of the first tube body is equal to
The internal diameter of second tube body.
As further optimization, rotary drive assembly includes being set to support tube below insulating layer, being fixedly arranged on support
The driving motor that the driving gear and output shaft that internal gear on cylinder inner wall is engaged with internal gear are connected with driving gear, internal tooth
It is additionally provided with thrust bearing between the lower face and pedestal of wheel.
As further optimization, crucible is graphite material component.
The advantageous effect of growing silicon carbice crystals thermal field rotating device provided by the invention is：Carbonization provided by the invention
Crystal growth thermal field rotating device, change it is traditional rotating crucible come by way of improving crystal symmetry, using passing through
It wears crucible bottom surface and support is fixed to crucible in the gas supply tube assembly affixed with crucible, by the heating for being set to crucible periphery
The rotation of rotary components is kept the temperature, realizes that the effect for improving symmetry of crystals makes simultaneously because crucible remains static to earthenware
The structure setting that crucible is passed through gas is more simple, avoids that feed air seal difficulty in the crucible rotated into tradition is big to ask
Topic, the stationary state of crucible also avoid the disturbance of internal gas convection current that crucible rotation is brought to crystal growth, are conducive to protect
Demonstrate,prove crystal quality.
Description of the drawings
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description be only the present invention some
Embodiment for those of ordinary skill in the art without having to pay creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is the structural schematic diagram of growing silicon carbice crystals thermal field rotating device provided in an embodiment of the present invention；
The partial enlargement structural representation that Fig. 2 is in Fig. 1 of the embodiment of the present invention I；
Wherein, each reference numeral in figure：
100- crucibles；110- crucible bodies；120- crucible covers；200- heating and thermal insulation rotary components；210- heats bucket；220- is kept the temperature
Bucket；221- stavings；222- lids；223- through holes；230- rotary drive assemblies；231- support tubes；232- internal gears；233- drives
Moving gear；234- driving motors；235- thrust bearings；300- supplies tube assembly；The first tube bodies of 310-；311- air vents；320-
Second tube body；400- induction coils；500- pedestals；800- raw materials；900- seed crystals.
Specific implementation mode
In order to make technical problems, technical solutions and advantages to be solved be more clearly understood, tie below
Accompanying drawings and embodiments are closed, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only
To explain the present invention, it is not intended to limit the present invention.
It should be noted that when element is referred to as " being fixed on " or " being set to " another element, it can be directly another
On one element or it is connected on another element.When an element is known as " being connected to " another element, it can
To be directly to another element or be indirectly connected on another element.
It is to be appreciated that term " length ", " width ", "upper", "lower", "front", "rear", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "top", "bottom" "inner", "outside" is that orientation based on ... shown in the drawings or position are closed
System, is merely for convenience of description of the present invention and simplification of the description, not indicating or implying the indicated device or element must have
Specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
Also referring to Fig. 1 to Fig. 2, now growing silicon carbice crystals thermal field rotating device provided by the invention is said
It is bright.Growing silicon carbice crystals thermal field rotating device, including pedestal 500, through pedestal 500 and the air supply pipe affixed with pedestal 500
Component 300, be fixedly arranged on gas supply 300 top of tube assembly and for accommodate raw material 800 crucible 100, be set to 100 periphery of crucible and
The heating and thermal insulation rotary components 200 that are rotatably assorted with crucible 100 and be sheathed on 200 periphery of heating and thermal insulation rotary components and with add
Heat heat preservation 200 spaced induction coil 400 of rotary components, the top of gas supply tube assembly 300 are set through the bottom of crucible 100
It sets, gas supply tube assembly 300 is internally provided with the air vent 311 for being passed through process gas into crucible 100.
Growing silicon carbice crystals thermal field rotating device provided by the invention, compared with prior art, carbon provided by the invention
SiClx crystal growing thermal field rotating device changes traditional rotating crucible 100 come by way of improving crystal symmetry, profit
Support is fixed to crucible 100 with the gas supply tube assembly 300 being installed on pedestal 500, by being set to 100 periphery of crucible
The effect for improving symmetry of crystals is realized in the rotation of heating and thermal insulation rotary components 200, since crucible 100 remains static,
Keep the structure setting for being passed through gas to crucible 100 more simple, it is close to avoid feed gas in the crucible 100 rotated into tradition
The big problem of difficulty is sealed, the stationary state of crucible also avoids crucible 100 and rotates the internal gas convection current brought to crystal growth
Disturbance, advantageously ensure that crystal quality.
Pedestal 500 is arranged in the lower section of crucible 100 in the present embodiment, and during actual setting, pedestal 500 can also be set
It sets in the top of crucible 100, it, also can be real by supplying the affixed effect between the realization crucible 100 of tube assembly 300 and pedestal 500
100 itself fixed effect of existing crucible is conducive to the sealing that can guarantee air supply pipe component 300 by simple sealing structure
Property.Induction coil 400 is stationary state, can be supported to realize fixation, can also be passed through by the pedestal 500 of lower section
The auxiliary securing member that side is set to extraneous member is fixed, and does not limit specific affixed position, by up and down or
The stable state of induction coil 400 may be implemented in periphery.
For crystal growth using PVT methods in silicon carbide monocrystal growth method, PVT methods are that current application is most ripe in the present embodiment
Most common method.PVT growing methods are that raw material 800 places 100 bottom of crucible, and seed crystal 900 is placed on the top of raw material 800,
Raw material 800 is distilled under 2200 DEG C or more of high temperature and low pressure, further according to the temperature gradient of raw material 800 and seed crystal 900, in seed
The method that monocrystalline is sublimated on crystalline substance 900.
As further optimization, referring to Fig. 1, as growing silicon carbice crystals thermal field rotating device provided by the invention
A kind of specific implementation mode, heating and thermal insulation rotary components 200 include be set to 100 periphery of crucible heating bucket 210, be fixedly arranged on
It heats the insulation barrel 220 of 210 periphery of bucket and is fixedly arranged on 220 lower section periphery of insulation barrel and is used to drive the rotation of insulation barrel 220
Rotary drive assembly 230 heats and is equipped with gap between bucket 210 and crucible 100.It is two layers that heating and thermal insulation rotary components 200, which divide, one
Layer is disposed on the heating bucket 210 in 100 outside of crucible, and one layer of insulating layer for being arranged to heating 210 outer layer of bucket heats bucket 210
Setting to ensure that there are gaps between inner wall and crucible 100, avoid in 200 rotary course of heating and thermal insulation rotary components to crucible
100 cause location conflicts, while between insulation barrel 220 and heating bucket 210 by the way of being fixedly connected, by heating bucket and sense
The sensing heating that coil 400 is formed is answered to ensure that 100 internal temperature of crucible reaches needed for crystal growth, while insulation barrel 220 is to warm
Amount is effectively kept, and thermal loss is avoided, and improves the economy of device production process.210 induction receiving coil of cartridge heater
The 400 intermediate frequency magnetic fields sent out then generate eddy-current heating, crucible 100 are heated to 2200 DEG C of temperatures above, then system pressure
10-10000Pa is dropped to, temperature gradient appropriate is at this moment subject between raw material 800 and seed crystal 900 and can be carried out carborundum crystals
Growth.
As further optimization, referring to Fig. 1, as growing silicon carbice crystals thermal field rotating device provided by the invention
A kind of specific implementation mode, insulation barrel 220 includes and staving 221 of opening upwards affixed with heating bucket 210 and is set to bucket
The lid 222 of 221 top of body.Insulation barrel 220 divides for lower bucket 221 and upper cover 222, and upper cover 222 can be opened
Being put into for 100 inside raw material 800 of crucible and seed crystal 900 is carried out, while the taking-up of product can also be carried out, has and conveniently picks and places
The effect of operation, the top in addition heating bucket 210 are opening form, and without being sealed, convenient for ensureing entire insulation barrel 220
The uniformity of internal bulk temperature advantageously ensures that the symmetry of crystal growth.
As further optimization, referring to Fig. 1, as growing silicon carbice crystals thermal field rotating device provided by the invention
A kind of specific implementation mode, be additionally provided with that the infrared ray that infrared radiation thermometer is sent out penetrates and thermometric passes through for making on lid 222
Through-hole 223.The measurement of 220 internal temperature of insulation barrel is carried out by infrared ray, and the model of infrared thermometer may be used
MR1SC has and measures accurate good result.
As further optimization, referring to Fig. 1, as growing silicon carbice crystals thermal field rotating device provided by the invention
A kind of specific implementation mode, crucible 100 includes and the affixed crucible body 110 of gas supply tube assembly 300 and is set to the top of crucible body 110
The crucible cover 120 in portion.Crucible 100 divides the crucible body 110 for lower part and 120 two parts of crucible cover on top, and crucible body 110 is for accommodating
Raw material 800, seed crystal 900 are arranged on the bottom surface of crucible cover 120, raw material 800 will be distilled under high temperature and low pressure effect, then
According to the temperature gradient of raw material 800 and seed crystal 900, monocrystal is sublimated on seed crystal 900.
As further optimization, referring to Fig. 1, as growing silicon carbice crystals thermal field rotating device provided by the invention
A kind of specific implementation mode, gas supply tube assembly 300 includes through the setting of heating and thermal insulation rotary components 200 and top surface and crucible
The first affixed tube body 310 of 100 bottom surface and the second tube body 320 through the setting of 110 bottom of crucible body.Supply tube assembly 300
On the one hand stable supporting role is played to crucible 100, while being also to convey process gas in crucible 100, runs through heating and thermal insulation
The first tube body 310 that rotary components 200 are arranged ensures good stability of strutting system due to needing, so it, which is different from, is set to earthenware
The second tube body 320 in crucible 100 is only used for the demand of feed gas, since 100 inner space of crucible is limited, and for accommodating original
Material, so the second tube body 320 is set as smaller size in the case where meeting Supplying gas condition as possible, and the first tube body 310 exists
The strength and stiffness for having enough are then needed under the premise of realizing its support function.
Second tube body 320 may be used in setting and be passed through the form for not exposing raw material surface in raw material 800, can also adopt
The form that 800 top surface of raw material is protruded from top, since there is the infeed of process gas in lower end, so in the effect of gas pressure
Under, raw material 800 will not cause to block to the upper end outlet for supplying tube assembly 300.
As further optimization, referring to Fig. 1, as growing silicon carbice crystals thermal field rotating device provided by the invention
A kind of specific implementation mode, the outer diameter of the first tube body 310 is more than the outer diameter of the second tube body 320, the internal diameter etc. of the first tube body 310
In the internal diameter of the second tube body 320.The outer diameter of first tube body 310 is more than the outer diameter of the second tube body 320, outer diameter difference institute between the two shape
At step for support crucible 100 bottom and be fixedly connected with the bottom of crucible 100, while 100 bottom of crucible supply first
Also using the form being fixedly connected between the inner wall in the hole that tube body 320 penetrates and the outer wall of the second tube body 310, so as to greatest extent
The stability for ensureing crucible 100 position, avoid crucible 100 from occurring shaking and then location conflicts occur between heating bucket 210,
The symmetry of crystal growth is also influenced simultaneously.
As further optimization, also referring to Fig. 1 to Fig. 2, as growing silicon carbice crystals provided by the invention heat
A kind of specific implementation mode of field rotating device, rotary drive assembly 230 include the support tube for being set to 220 lower section of insulating layer
231, driving gear 233 and output shaft that the internal gear 232 being fixedly arranged on 231 inner wall of support tube is engaged with internal gear 232 with
The driving motor 234 for driving gear 233 connected, thrust bearing 235 is additionally provided between the lower face and pedestal 500 of internal gear 232.
While ensureing interior crucible 100 by supplying the fastness connected between tube assembly 300 and pedestal 500 to crucible 100 outside
The heating and thermal insulation rotary components 200 in portion are driven, so the driving of heating and thermal insulation rotary components 200 should avoid its axle center position
It sets, avoids that location conflicts occur between the gas supply tube assembly 300 of support crucible 100.Using in heating and thermal insulation in the present embodiment
The form of 200 lower section setting support tube 231 of rotary components, then by the way that internal gear 232 is arranged in 231 inside of support tube, then
It drives driving gear 233 to realize the rotation of internal gear 232 by driving motor 234, and then drives support tube 231 and top
Heating and thermal insulation rotary components 200 rotate.Thrust bearing 235 is arranged between the lower face of internal gear 232 and pedestal 500, can
Play stable supporting role in the heating and thermal insulation rotary components 200 to top, the upper and lower end face of thrust bearing 235 respectively with
Internal gear 232 is fixedly connected with pedestal 500, be may be used to be arranged on 500 top surface of 232 lower face of internal gear and pedestal and is used for
The form of the groove body of thrust bearing both ends of the surface is accommodated, realizes the stabilization in thrust bearing axle center, avoids that bearing occurs in the horizontal plane
Displacement, ensure good support effect.
As further optimization, one kind as growing silicon carbice crystals thermal field rotating device provided by the invention is specific
Embodiment, crucible 100 are graphite material component.Crucible 100 uses graphite material, can be provided for the growth of carborundum crystals
Good temperature environment has good using effect.
Growing silicon carbice crystals thermal field rotating device provided by the invention is changed and traditional is improved by rotating crucible
The mode of crystal symmetry, using through crucible bottom surface and support is fixed to crucible in the gas supply tube assembly affixed with crucible,
By being set to the rotation of the heating and thermal insulation rotary components of crucible periphery, the effect for improving symmetry of crystals is realized, while by
It remains static in crucible, keeps the structure setting for being passed through gas to crucible more simple, avoid the earthenware rotated into tradition
The stationary state of the big problem of feed air seal difficulty in crucible, crucible also avoids the internal gas convection current that crucible rotation is brought
Disturbance to crystal growth, advantageously ensures that crystal quality.
The above is merely preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
All any modification, equivalent and improvement made by within principle etc., should all be included in the protection scope of the present invention.
Claims (9)
1. growing silicon carbice crystals thermal field rotating device, it is characterised in that：Including pedestal (500), through the pedestal (500) and
With the pedestal (500) affixed gas supply tube assembly (300), be fixedly arranged on the gas supply tube assembly (300) top and for accommodating
The crucible (100) of raw material (800) and seed crystal (900) is set to the crucible (100) periphery and is rotated with the crucible (100)
The heating and thermal insulation rotary components (200) of cooperation and be sheathed on heating and thermal insulation rotary components (200) periphery and with it is described plus
Heat heat preservation rotary components (200) spaced induction coil (400), the top of the gas supply tube assembly (300) is through described
The bottom of crucible (100) is arranged, and the gas supply tube assembly (300) is internally provided with for being passed through technique into the crucible (100)
The air vent (311) of gas.
2. growing silicon carbice crystals thermal field rotating device as described in claim 1, it is characterised in that：The heating and thermal insulation rotation
Component (200) includes the heating bucket (210) for being set to the crucible (100) periphery and opening upwards, is fixedly arranged on the heating bucket
(210) insulation barrel (220) of periphery and it is fixedly arranged below the insulation barrel (220) periphery and for driving the insulation barrel
(220) rotary drive assembly (230) rotated is equipped with gap between the heating bucket (210) and the crucible (100).
3. growing silicon carbice crystals thermal field rotating device as claimed in claim 2, it is characterised in that：The insulation barrel (220)
Include affixed and opening upwards staving (221) and the lid above the staving (221) with the heating bucket (210)
(222)。
4. growing silicon carbice crystals thermal field rotating device as claimed in claim 3, it is characterised in that：On the lid (222)
It is additionally provided with the through hole (223) for making the infrared ray that infrared radiation thermometer is sent out penetrate simultaneously thermometric.
5. growing silicon carbice crystals thermal field rotating device as described in claim 1, it is characterised in that：Crucible (100) packet
The crucible cover for including the crucible body (110) affixed with the gas supply tube assembly (300) and being set at the top of the crucible body (110)
(120)。
6. growing silicon carbice crystals thermal field rotating device as described in claim 1, it is characterised in that：The gas supply tube assembly
(300) include through the bottom surface of the heating and thermal insulation rotary components (200) setting and top surface and the crucible (100) it is affixed the
One tube body (310) and the second tube body (320) being arranged through crucible body (110) bottom.
7. growing silicon carbice crystals thermal field rotating device as claimed in claim 6, it is characterised in that：First tube body
(310) outer diameter is more than the outer diameter of second tube body (320), and the internal diameter of first tube body (310) is equal to described second and manages
The internal diameter of body (320).
8. growing silicon carbice crystals thermal field rotating device as claimed in claim 2, it is characterised in that：The rotary drive assembly
(230) include being set to the support tube (231) below the insulating layer (220), being fixedly arranged on the support tube (231) inner wall
Internal gear (232), the driving gear (233) engaged with the internal gear (232) and output shaft and the driving gear (233)
Connected driving motor (234) is additionally provided with thrust bearing between the lower face and the pedestal (500) of the internal gear (232)
(235)。
9. growing silicon carbice crystals thermal field rotating device as described in claim 1, it is characterised in that：The crucible (100) is
Graphite material component.
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| CN201810616154.1A CN108588836A (en) | 2018-06-14 | 2018-06-14 | Growing silicon carbice crystals thermal field rotating device |
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Cited By (7)
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| CN109518275A (en) * | 2018-11-02 | 2019-03-26 | 山东天岳先进材料科技有限公司 | A kind of method of uniform distribution of temperature field degree during raising silicon carbide monocrystal growth |
| CN111534854A (en) * | 2020-06-12 | 2020-08-14 | 北京北方华创微电子装备有限公司 | Crystal growing furnace |
| CN111621844A (en) * | 2020-06-22 | 2020-09-04 | 哈尔滨化兴软控科技有限公司 | Rotary type double-temperature-zone PVT method high-quality single crystal preparation device and method |
| CN113549993A (en) * | 2021-07-06 | 2021-10-26 | 扬州申威光电器材有限公司 | Seed crystal culture fixing device |
| CN113564696A (en) * | 2021-07-26 | 2021-10-29 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Device and method for improving radial uniformity of PVT method grown crystal |
| CN114411264A (en) * | 2022-01-20 | 2022-04-29 | 南京晶升装备股份有限公司 | Rotatory long brilliant stove induction heating system of carborundum and long brilliant stove |
| CN114908416A (en) * | 2022-05-06 | 2022-08-16 | 连城凯克斯科技有限公司 | High life heat preservation device of silicon carbide crystal growth furnace |
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| CN109518275A (en) * | 2018-11-02 | 2019-03-26 | 山东天岳先进材料科技有限公司 | A kind of method of uniform distribution of temperature field degree during raising silicon carbide monocrystal growth |
| CN109518275B (en) * | 2018-11-02 | 2021-02-19 | 山东天岳先进科技股份有限公司 | Method for improving temperature field distribution uniformity in silicon carbide single crystal growth process |
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