JPS5266377A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5266377A
JPS5266377A JP14358675A JP14358675A JPS5266377A JP S5266377 A JPS5266377 A JP S5266377A JP 14358675 A JP14358675 A JP 14358675A JP 14358675 A JP14358675 A JP 14358675A JP S5266377 A JPS5266377 A JP S5266377A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
layer
semiconductor
steam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14358675A
Other languages
Japanese (ja)
Other versions
JPS5444595B2 (en
Inventor
Tsukasa Hattori
Yoshiaki Inoue
Toshio Tetsuya
Michio Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14358675A priority Critical patent/JPS5266377A/en
Publication of JPS5266377A publication Critical patent/JPS5266377A/en
Publication of JPS5444595B2 publication Critical patent/JPS5444595B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To make a stabilized layer on the surface of semiconductor, by making heat treatment on the semiconductor element under the steam or steam containing stmosphere after the silicon dioxide layer is deposited on the phosphorus silicic acid glass layer of element.
COPYRIGHT: (C)1977,JPO&Japio
JP14358675A 1975-11-29 1975-11-29 Manufacture of semiconductor device Granted JPS5266377A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14358675A JPS5266377A (en) 1975-11-29 1975-11-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14358675A JPS5266377A (en) 1975-11-29 1975-11-29 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5266377A true JPS5266377A (en) 1977-06-01
JPS5444595B2 JPS5444595B2 (en) 1979-12-26

Family

ID=15342168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14358675A Granted JPS5266377A (en) 1975-11-29 1975-11-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5266377A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279777A (en) * 1975-12-26 1977-07-05 Toshiba Corp Production of semiconductor device
WO1997047046A1 (en) * 1996-06-06 1997-12-11 Seiko Epson Corporation Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615942A (en) * 1969-06-05 1971-10-26 Rca Corp Method of making a phosphorus glass passivated transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615942A (en) * 1969-06-05 1971-10-26 Rca Corp Method of making a phosphorus glass passivated transistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279777A (en) * 1975-12-26 1977-07-05 Toshiba Corp Production of semiconductor device
JPS5444635B2 (en) * 1975-12-26 1979-12-27
WO1997047046A1 (en) * 1996-06-06 1997-12-11 Seiko Epson Corporation Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method
US6146928A (en) * 1996-06-06 2000-11-14 Seiko Epson Corporation Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method
KR100381828B1 (en) * 1996-06-06 2003-08-25 세이코 엡슨 가부시키가이샤 Thin film transistor manufacturing method, liquid crystal display device and electronic apparatus using same
CN100392867C (en) * 1996-06-06 2008-06-04 精工爱普生株式会社 Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method

Also Published As

Publication number Publication date
JPS5444595B2 (en) 1979-12-26

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