JPS5279777A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5279777A
JPS5279777A JP15661975A JP15661975A JPS5279777A JP S5279777 A JPS5279777 A JP S5279777A JP 15661975 A JP15661975 A JP 15661975A JP 15661975 A JP15661975 A JP 15661975A JP S5279777 A JPS5279777 A JP S5279777A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
layer
stabilize
laminating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15661975A
Other languages
Japanese (ja)
Other versions
JPS5444635B2 (en
Inventor
Tsukasa Hattori
Yoshiaki Inoue
Toshio Tetsuya
Michio Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15661975A priority Critical patent/JPS5279777A/en
Publication of JPS5279777A publication Critical patent/JPS5279777A/en
Publication of JPS5444635B2 publication Critical patent/JPS5444635B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To stabilize the surface of a semiconductor element by laminating an SiO2 layer on the silicate glass layer having getter ability and containing electrode region forming elements and heat treating the substrate ina water vapor atmosphere.
COPYRIGHT: (C)1977,JPO&Japio
JP15661975A 1975-12-26 1975-12-26 Production of semiconductor device Granted JPS5279777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15661975A JPS5279777A (en) 1975-12-26 1975-12-26 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15661975A JPS5279777A (en) 1975-12-26 1975-12-26 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5279777A true JPS5279777A (en) 1977-07-05
JPS5444635B2 JPS5444635B2 (en) 1979-12-27

Family

ID=15631668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15661975A Granted JPS5279777A (en) 1975-12-26 1975-12-26 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5279777A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615942A (en) * 1969-06-05 1971-10-26 Rca Corp Method of making a phosphorus glass passivated transistor
JPS5266377A (en) * 1975-11-29 1977-06-01 Toshiba Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615942A (en) * 1969-06-05 1971-10-26 Rca Corp Method of making a phosphorus glass passivated transistor
JPS5266377A (en) * 1975-11-29 1977-06-01 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5444635B2 (en) 1979-12-27

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