Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP15662075ApriorityCriticalpatent/JPS5279778A/en
Publication of JPS5279778ApublicationCriticalpatent/JPS5279778A/en
PURPOSE: To stabilize the surface of a semiconductor element by laminating an SiO2 layer on the silicate glass layer having getter ability and containing electrode region forming elements, and heat treating the substrate in an atmosphere containing H2.
COPYRIGHT: (C)1977,JPO&Japio
JP15662075A1975-12-261975-12-26Production of semiconductor device
PendingJPS5279778A
(en)