JPS5772332A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5772332A JPS5772332A JP14859880A JP14859880A JPS5772332A JP S5772332 A JPS5772332 A JP S5772332A JP 14859880 A JP14859880 A JP 14859880A JP 14859880 A JP14859880 A JP 14859880A JP S5772332 A JPS5772332 A JP S5772332A
- Authority
- JP
- Japan
- Prior art keywords
- silicon dioxide
- layer
- etching
- silicon
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent an overhang from being produced at an end part of polycrystalline silicon by a method wherein a silicon dioxide layer deposited on a silicon dioxide layer is removed, only the upper face of silicon dioxide is removed by means of active ion etching while allowing the side surface thereof to be left, and after that, silicon dioxide etching that is a pretreatment is performed. CONSTITUTION:Silicon dioxide 1,3 and polycrystalline silicon 2 are oxidized once, and polycrystalline silicon layer 6,6' are formed, and with the application of reactive ion etching, the layer 6' is removed, and the layer 6 remains. After that, etching for silicon dioxide as the next process is performed. Thereby, overhang of the silicon dioxide layer is prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14859880A JPS5772332A (en) | 1980-10-23 | 1980-10-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14859880A JPS5772332A (en) | 1980-10-23 | 1980-10-23 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5772332A true JPS5772332A (en) | 1982-05-06 |
Family
ID=15456334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14859880A Pending JPS5772332A (en) | 1980-10-23 | 1980-10-23 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5772332A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5444478A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Manufacture for semiconductor device |
JPS54151374A (en) * | 1978-04-14 | 1979-11-28 | Toshiba Corp | Manufacture for semiconductor device |
-
1980
- 1980-10-23 JP JP14859880A patent/JPS5772332A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5444478A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Manufacture for semiconductor device |
JPS54151374A (en) * | 1978-04-14 | 1979-11-28 | Toshiba Corp | Manufacture for semiconductor device |
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