JPS5444478A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5444478A
JPS5444478A JP11070577A JP11070577A JPS5444478A JP S5444478 A JPS5444478 A JP S5444478A JP 11070577 A JP11070577 A JP 11070577A JP 11070577 A JP11070577 A JP 11070577A JP S5444478 A JPS5444478 A JP S5444478A
Authority
JP
Japan
Prior art keywords
substrate
flat
etched
films
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11070577A
Other languages
Japanese (ja)
Other versions
JPS6138609B2 (en
Inventor
Onori Ishikawa
Takeya Ezaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11070577A priority Critical patent/JPS5444478A/en
Publication of JPS5444478A publication Critical patent/JPS5444478A/en
Publication of JPS6138609B2 publication Critical patent/JPS6138609B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To simply form the isolated, separated and flat substrate without causing swelling of bird head.
CONSTITUTION: The Si substrate 31 is etched by reaction sputtering with double layer of Si3N4 32 and SiO3 33, and the step 34 tilt at the side surface 35 is made by setting the conditions. When coating is made with Si3N4 36, plasma shape reaction gas 39 is vertically radiated, and when the film 36 of the bottom surface 38 is etched, the pattern 36' is left with the film thickness at formation of the side surface, and the edge 40 covers the edge 42 of the films 32 and 33. Next, wet oxide film 44 is formed and it is made almost flat with the substrate surface and further, the films 32 and 33 are removed, obtaining the substrate desired and flat.
COPYRIGHT: (C)1979,JPO&Japio
JP11070577A 1977-09-14 1977-09-14 Manufacture for semiconductor device Granted JPS5444478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11070577A JPS5444478A (en) 1977-09-14 1977-09-14 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11070577A JPS5444478A (en) 1977-09-14 1977-09-14 Manufacture for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5444478A true JPS5444478A (en) 1979-04-07
JPS6138609B2 JPS6138609B2 (en) 1986-08-30

Family

ID=14542357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11070577A Granted JPS5444478A (en) 1977-09-14 1977-09-14 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5444478A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749235A (en) * 1980-07-11 1982-03-23 Philips Nv Method of producing semiconductor device
JPS5772332A (en) * 1980-10-23 1982-05-06 Fujitsu Ltd Manufacture of semiconductor device
JPS57199232A (en) * 1981-06-03 1982-12-07 Fujitsu Ltd Manufacture of semiconductor device
JPS5832430A (en) * 1981-08-21 1983-02-25 Toshiba Corp Manufacture of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749235A (en) * 1980-07-11 1982-03-23 Philips Nv Method of producing semiconductor device
JPH0345532B2 (en) * 1980-07-11 1991-07-11 Fuiritsupusu Furuuiranpenfuaburiken Nv
JPS5772332A (en) * 1980-10-23 1982-05-06 Fujitsu Ltd Manufacture of semiconductor device
JPS57199232A (en) * 1981-06-03 1982-12-07 Fujitsu Ltd Manufacture of semiconductor device
JPH0249018B2 (en) * 1981-06-03 1990-10-26 Fujitsu Ltd
JPS5832430A (en) * 1981-08-21 1983-02-25 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6138609B2 (en) 1986-08-30

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