JPS5470773A - Manufacture of photo mask - Google Patents

Manufacture of photo mask

Info

Publication number
JPS5470773A
JPS5470773A JP13806577A JP13806577A JPS5470773A JP S5470773 A JPS5470773 A JP S5470773A JP 13806577 A JP13806577 A JP 13806577A JP 13806577 A JP13806577 A JP 13806577A JP S5470773 A JPS5470773 A JP S5470773A
Authority
JP
Japan
Prior art keywords
pattern
manufacture
photo mask
mask
glass substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13806577A
Other languages
Japanese (ja)
Inventor
Masahiko Yasuoka
Tatsuya Enomoto
Shigeji Kinoshita
Kazushi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13806577A priority Critical patent/JPS5470773A/en
Publication of JPS5470773A publication Critical patent/JPS5470773A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To secure formation of the minute pattern by forming the mask pattern for the surface of the glass substrate through the ion etching.
CONSTITUTION: Cr layer 2 is formed to glass substrate 1 and coated with resist mask 31, and then etched by the Ar ion. Thus, no eaves part is caused to mask pattern 21 with no malformation. Accordingly, only pattern 21 touches wafer 6, and the space is produced along pattern 21 between the wafer and the glass. Thus, the linkage is secured to outside with easy isolation.
COPYRIGHT: (C)1979,JPO&Japio
JP13806577A 1977-11-16 1977-11-16 Manufacture of photo mask Pending JPS5470773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13806577A JPS5470773A (en) 1977-11-16 1977-11-16 Manufacture of photo mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13806577A JPS5470773A (en) 1977-11-16 1977-11-16 Manufacture of photo mask

Publications (1)

Publication Number Publication Date
JPS5470773A true JPS5470773A (en) 1979-06-06

Family

ID=15213150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13806577A Pending JPS5470773A (en) 1977-11-16 1977-11-16 Manufacture of photo mask

Country Status (1)

Country Link
JP (1) JPS5470773A (en)

Similar Documents

Publication Publication Date Title
JPS57204133A (en) Manufacture of semiconductor integrated circuit
EP0095209A3 (en) Method of forming a resist mask resistant to plasma etching
JPS5797626A (en) Manufacture of semiconductor device
JPS5470773A (en) Manufacture of photo mask
JPS5562732A (en) Preparation of aperture stop
JPS57138638A (en) Photoetching mask
JPS53112671A (en) Forming method for pattern
JPS5568655A (en) Manufacturing method of wiring
JPS5485676A (en) Glass mask
JPS56138941A (en) Forming method of wiring layer
JPS5612736A (en) Formation of fine chromium pattern
JPS55105348A (en) Manufacture of semiconductor device
JPS5421173A (en) Manufacture for semiconductor having oxide film
JPS5637629A (en) Formation of thin film pattern
JPS5633826A (en) Manufacture of target
JPS54162460A (en) Electrode forming method
JPS5743425A (en) Forming method for fine pattern
JPS55130140A (en) Fabricating method of semiconductor device
JPS5498179A (en) Preparation of minute circuits and elements
JPS5496369A (en) Mask forming method
JPS57155731A (en) Formation of pattern
JPS54124975A (en) Manufacture of semiconductor element
JPS5382269A (en) Production of mask
JPS57101668A (en) Etching method
JPS5553421A (en) Composite mask for ion etching