JPS57183400A - Method and apparatus for liquid-phase growth of 2-6 compound - Google Patents
Method and apparatus for liquid-phase growth of 2-6 compoundInfo
- Publication number
- JPS57183400A JPS57183400A JP6913081A JP6913081A JPS57183400A JP S57183400 A JPS57183400 A JP S57183400A JP 6913081 A JP6913081 A JP 6913081A JP 6913081 A JP6913081 A JP 6913081A JP S57183400 A JPS57183400 A JP S57183400A
- Authority
- JP
- Japan
- Prior art keywords
- vapor pressure
- liquid
- phase growth
- compound
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To carry out the liquid-phase growth of a high quality II-VI compound at a low growth temperature, by using an element having high vapor pressure as a solvent, controlling the vapor pressure of an element having low vapor pressure, and specifying the vapor pressure components of both elements.
CONSTITUTION: A II-VI compound such as ZnSe is subjected to liquid-phase growth using Se having high vapor pressure as the solvent and controlling the vapor pressure of Zn having low vapor pressure. Concretely, Se solvent is charged into the crystallization part 12 and the source crystal part 13 of a quartz ampule 11, and ZnSe and Zn are charged into the source crystal part 13 and the chamber 21, respectively. The ampule 11 is evacuated to a desired vacuum degree and sealed, and the liquid-phase growth is carried out keeping the pressure of the Se component having high vapor pressure within the range of 2W66 atm and that of the Zn component having low vapor pressure within the range of 0.1W15atm. High quality ZnSe crystals are grown in the crystallization part 12. The temperature difference between the source crystal part 13 and the crystallization part 12, e.g. T2-T3, is preferably about 10W50°C.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6913081A JPS57183400A (en) | 1981-05-07 | 1981-05-07 | Method and apparatus for liquid-phase growth of 2-6 compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6913081A JPS57183400A (en) | 1981-05-07 | 1981-05-07 | Method and apparatus for liquid-phase growth of 2-6 compound |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57183400A true JPS57183400A (en) | 1982-11-11 |
JPS6110439B2 JPS6110439B2 (en) | 1986-03-29 |
Family
ID=13393746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6913081A Granted JPS57183400A (en) | 1981-05-07 | 1981-05-07 | Method and apparatus for liquid-phase growth of 2-6 compound |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57183400A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0099168A2 (en) * | 1982-06-24 | 1984-01-25 | Zaidan Hojin Handotai Kenkyu Shinkokai | Apparatus for performing solution growth of group II-VI compound semiconductor crystal |
JPS59172280A (en) * | 1983-03-19 | 1984-09-28 | Semiconductor Res Found | Ii-vi group intermediate compound semiconductor hetero-junction device |
US4572763A (en) * | 1982-07-14 | 1986-02-25 | Zaidan Hojin Handotai Kenkyu Shinkokai | Method and apparatus for performing epitaxial growth of ZnSe crystal from a melt thereof |
US4917757A (en) * | 1982-07-02 | 1990-04-17 | Zaidan Hojin Handotai Kenkyu Shinkokai | Method of performing solution growth of ZnSe crystals |
JPH02129099A (en) * | 1988-11-07 | 1990-05-17 | Nippon Sheet Glass Co Ltd | Growth of znse single crystal |
-
1981
- 1981-05-07 JP JP6913081A patent/JPS57183400A/en active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0099168A2 (en) * | 1982-06-24 | 1984-01-25 | Zaidan Hojin Handotai Kenkyu Shinkokai | Apparatus for performing solution growth of group II-VI compound semiconductor crystal |
US4909998A (en) * | 1982-06-24 | 1990-03-20 | Zaidan Hojin Handotai Kenkyu Shinkokai | Apparatus for performing solution growth of group II-VI compound semiconductor crystal |
US4917757A (en) * | 1982-07-02 | 1990-04-17 | Zaidan Hojin Handotai Kenkyu Shinkokai | Method of performing solution growth of ZnSe crystals |
US4572763A (en) * | 1982-07-14 | 1986-02-25 | Zaidan Hojin Handotai Kenkyu Shinkokai | Method and apparatus for performing epitaxial growth of ZnSe crystal from a melt thereof |
JPS59172280A (en) * | 1983-03-19 | 1984-09-28 | Semiconductor Res Found | Ii-vi group intermediate compound semiconductor hetero-junction device |
JPH02129099A (en) * | 1988-11-07 | 1990-05-17 | Nippon Sheet Glass Co Ltd | Growth of znse single crystal |
JPH0535720B2 (en) * | 1988-11-07 | 1993-05-27 | Nippon Sheet Glass Co Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPS6110439B2 (en) | 1986-03-29 |
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