JPS57183400A - Method and apparatus for liquid-phase growth of 2-6 compound - Google Patents

Method and apparatus for liquid-phase growth of 2-6 compound

Info

Publication number
JPS57183400A
JPS57183400A JP6913081A JP6913081A JPS57183400A JP S57183400 A JPS57183400 A JP S57183400A JP 6913081 A JP6913081 A JP 6913081A JP 6913081 A JP6913081 A JP 6913081A JP S57183400 A JPS57183400 A JP S57183400A
Authority
JP
Japan
Prior art keywords
vapor pressure
liquid
phase growth
compound
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6913081A
Other languages
Japanese (ja)
Other versions
JPS6110439B2 (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI KENKIYUU SHINKOUKAI
Semiconductor Research Foundation
Original Assignee
HANDOUTAI KENKIYUU SHINKOUKAI
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI KENKIYUU SHINKOUKAI, Semiconductor Research Foundation filed Critical HANDOUTAI KENKIYUU SHINKOUKAI
Priority to JP6913081A priority Critical patent/JPS57183400A/en
Publication of JPS57183400A publication Critical patent/JPS57183400A/en
Publication of JPS6110439B2 publication Critical patent/JPS6110439B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To carry out the liquid-phase growth of a high quality II-VI compound at a low growth temperature, by using an element having high vapor pressure as a solvent, controlling the vapor pressure of an element having low vapor pressure, and specifying the vapor pressure components of both elements.
CONSTITUTION: A II-VI compound such as ZnSe is subjected to liquid-phase growth using Se having high vapor pressure as the solvent and controlling the vapor pressure of Zn having low vapor pressure. Concretely, Se solvent is charged into the crystallization part 12 and the source crystal part 13 of a quartz ampule 11, and ZnSe and Zn are charged into the source crystal part 13 and the chamber 21, respectively. The ampule 11 is evacuated to a desired vacuum degree and sealed, and the liquid-phase growth is carried out keeping the pressure of the Se component having high vapor pressure within the range of 2W66 atm and that of the Zn component having low vapor pressure within the range of 0.1W15atm. High quality ZnSe crystals are grown in the crystallization part 12. The temperature difference between the source crystal part 13 and the crystallization part 12, e.g. T2-T3, is preferably about 10W50°C.
COPYRIGHT: (C)1982,JPO&Japio
JP6913081A 1981-05-07 1981-05-07 Method and apparatus for liquid-phase growth of 2-6 compound Granted JPS57183400A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6913081A JPS57183400A (en) 1981-05-07 1981-05-07 Method and apparatus for liquid-phase growth of 2-6 compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6913081A JPS57183400A (en) 1981-05-07 1981-05-07 Method and apparatus for liquid-phase growth of 2-6 compound

Publications (2)

Publication Number Publication Date
JPS57183400A true JPS57183400A (en) 1982-11-11
JPS6110439B2 JPS6110439B2 (en) 1986-03-29

Family

ID=13393746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6913081A Granted JPS57183400A (en) 1981-05-07 1981-05-07 Method and apparatus for liquid-phase growth of 2-6 compound

Country Status (1)

Country Link
JP (1) JPS57183400A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0099168A2 (en) * 1982-06-24 1984-01-25 Zaidan Hojin Handotai Kenkyu Shinkokai Apparatus for performing solution growth of group II-VI compound semiconductor crystal
JPS59172280A (en) * 1983-03-19 1984-09-28 Semiconductor Res Found Ii-vi group intermediate compound semiconductor hetero-junction device
US4572763A (en) * 1982-07-14 1986-02-25 Zaidan Hojin Handotai Kenkyu Shinkokai Method and apparatus for performing epitaxial growth of ZnSe crystal from a melt thereof
US4917757A (en) * 1982-07-02 1990-04-17 Zaidan Hojin Handotai Kenkyu Shinkokai Method of performing solution growth of ZnSe crystals
JPH02129099A (en) * 1988-11-07 1990-05-17 Nippon Sheet Glass Co Ltd Growth of znse single crystal

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0099168A2 (en) * 1982-06-24 1984-01-25 Zaidan Hojin Handotai Kenkyu Shinkokai Apparatus for performing solution growth of group II-VI compound semiconductor crystal
US4909998A (en) * 1982-06-24 1990-03-20 Zaidan Hojin Handotai Kenkyu Shinkokai Apparatus for performing solution growth of group II-VI compound semiconductor crystal
US4917757A (en) * 1982-07-02 1990-04-17 Zaidan Hojin Handotai Kenkyu Shinkokai Method of performing solution growth of ZnSe crystals
US4572763A (en) * 1982-07-14 1986-02-25 Zaidan Hojin Handotai Kenkyu Shinkokai Method and apparatus for performing epitaxial growth of ZnSe crystal from a melt thereof
JPS59172280A (en) * 1983-03-19 1984-09-28 Semiconductor Res Found Ii-vi group intermediate compound semiconductor hetero-junction device
JPH02129099A (en) * 1988-11-07 1990-05-17 Nippon Sheet Glass Co Ltd Growth of znse single crystal
JPH0535720B2 (en) * 1988-11-07 1993-05-27 Nippon Sheet Glass Co Ltd

Also Published As

Publication number Publication date
JPS6110439B2 (en) 1986-03-29

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