JPH02129099A - Growth of znse single crystal - Google Patents
Growth of znse single crystalInfo
- Publication number
- JPH02129099A JPH02129099A JP28077788A JP28077788A JPH02129099A JP H02129099 A JPH02129099 A JP H02129099A JP 28077788 A JP28077788 A JP 28077788A JP 28077788 A JP28077788 A JP 28077788A JP H02129099 A JPH02129099 A JP H02129099A
- Authority
- JP
- Japan
- Prior art keywords
- growth
- znse
- single crystal
- crucible
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 35
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 19
- 239000000155 melt Substances 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 abstract description 13
- 239000011261 inert gas Substances 0.000 abstract description 5
- 229910052582 BN Inorganic materials 0.000 abstract description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000003575 carbonaceous material Substances 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 2
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 13
- 239000011669 selenium Substances 0.000 description 13
- 239000002994 raw material Substances 0.000 description 11
- 239000003708 ampul Substances 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
本発明は、半導体工業等において使用されるＺｎＳｅ単
結晶の結晶成長方法に間するものである。The present invention relates to a method for growing ZnSe single crystals used in the semiconductor industry and the like.
【従来の技１１ｉＩ
ＺｎＳｅは青色の発光業子の材料である。素子作製はＭ
ＯＶＰＥ （メタルオーガニック ベイパーフエイズエ
ビタキシイ）やＭＢＥ（モレキュラビームエビタキシイ
）などのエピタキシャル成長によって行われろ、エピタ
キシャル成長に於て最も重要なことは、成長結晶と基板
の格子定数を同じにするか、もしくは近い値にすること
である。
結晶系が同じで格子定数が近いものとしてＧａＡＳがあ
る。しかしながらＺ １１ Ｓ ｅとＧａＡｓとの間に
はｔ）、２６％の格子不整合が存在する。ＧａＡｓ０上
にＺｎＳｅを成長させた場合に、この格子不整合のため
にミスフィツト転位が発生することが報告されている。
また成長中に基ＦＡ構成元素であろＧａが、ＺｎＳｅ中
にビ散してしまい好ましくない。さらに両者の熱膨張係
数が違うためエピタキシャル成長後に、歪が残ってしま
う。このような不都合を闘消するためにはエピタキシャ
ル成長する材料と同じ材料を使えば解決できる。この意
味でＺｎＳｅ基板を使ったホモエピタキシャル成長が重
要になってくる。
結晶基板を得ろ方法としては高圧溶融法がある。
（例えばＪ、Ｃｒｙ、Ｇｒｏｗ、 主４．４６７（１
９７Ｂ） ）この方法はＺｎＳｅ粉末をカーボンなとの
坩堝にいれ加熱し溶融するのであるが、ＺｎＳｅは高温
で分解反応が起こるためアルゴンなどの不活性ガスを印
加しながら溶融を行う、その圧力は１００気圧程度の圧
力である。原料を溶融後徐々に坩堝を低温部分に移動さ
せることにより単結晶化することができ、比較的短い時
間で大型の単結晶が得られる。
またセレンの溶媒を用いて１１００℃以下の温度で溶液
成長をさせる方法がある。 （例えばＪ。
ＡｐρＩ、Ｐｈｙｓ、 ｉ７．２２１０ （１９８５
））この方法は石英管中に溶融セレンとＺｎＳｅをいれ
、石英管の高温部に原料ＺｎＳｅを置き低温部に種結晶
を配置し溶解度の差を利用して連続的に単結晶を成長さ
せるものである。
【発明が解決しようとする課Ｈ】
ＺｎＳｅは１６２０℃で溶融するが１４２０℃において
結晶系が変わる。すなわち高温鋼では六方晶系に属する
ウルツ鉱型、それ以下では立方晶系のジンクブレンド型
になる。前記のＺｎＳｅ結晶の成長法ではこの転移温度
を固相状態で通過するため、双晶が高密度に導入されて
しまう、その結果としてエピタキシャル成長用の基板と
して使用できる部分は限られてしまい歩止まりが非常に
悪いという重大な欠点があった。また溶液成長法におい
ては低温であるために、ＺｎＳｅの溶解度が低く結晶成
長速度が遅く大型の結晶ができにくいという欠点があっ
た。[Conventional technique 11iI ZnSe is a blue luminescent material. Element fabrication is M
The most important thing in epitaxial growth is to make the lattice constant of the growing crystal and the substrate the same, or The idea is to set the values close to each other. GaAS has the same crystal system and similar lattice constants. However, there is a 26% lattice mismatch between Z 11 S e and GaAs. It has been reported that when ZnSe is grown on GaAs0, misfit dislocations occur due to this lattice mismatch. Moreover, during growth, Ga, which is a constituent element of the base FA, is dispersed into ZnSe, which is not preferable. Furthermore, since the thermal expansion coefficients of the two are different, distortion remains after epitaxial growth. In order to overcome these inconveniences, it is possible to solve the problem by using the same material as that used for epitaxial growth. In this sense, homoepitaxial growth using a ZnSe substrate becomes important. A high pressure melting method is available as a method for obtaining a crystal substrate. (For example, J, Cry, Grow, main 4.467 (1
97B)) In this method, ZnSe powder is placed in a crucible of carbon and heated to melt it. However, since ZnSe undergoes a decomposition reaction at high temperatures, melting is performed while applying an inert gas such as argon, and the pressure is The pressure is about 100 atmospheres. Single crystallization can be achieved by melting the raw material and gradually moving the crucible to a low-temperature section, and a large single crystal can be obtained in a relatively short time. There is also a method of performing solution growth at a temperature of 1100° C. or lower using a selenium solvent. (e.g. J. ApρI, Phys, i7.2210 (1985
)) In this method, molten selenium and ZnSe are placed in a quartz tube, the raw material ZnSe is placed in the high temperature part of the quartz tube, a seed crystal is placed in the low temperature part, and single crystals are continuously grown using the difference in solubility. It is. Issue H to be Solved by the Invention ZnSe melts at 1620°C, but its crystal system changes at 1420°C. That is, high-temperature steels have a wurtzite type, which belongs to a hexagonal system, and lower temperatures have a zinc blend type, which has a cubic system. In the above-mentioned method for growing ZnSe crystals, this transition temperature is passed through in a solid state, so twins are introduced at a high density.As a result, the area that can be used as a substrate for epitaxial growth is limited and the yield is reduced. It had a very serious drawback. Further, in the solution growth method, since the temperature is low, the solubility of ZnSe is low and the crystal growth rate is slow, making it difficult to form large crystals.
本発明は前記問題点を解決するためになされたものであ
って、Ｓｅが５７．５〜９２．５ｍｏｌ％、Ｚｎが７．
５〜４２．５ｍｏｌ％のＺｎ−９ｅ系＠液を形成し、該
融液を用いてＺｎＳｅ単結晶の成長を行なうＺｎＳｅ単
結晶の成長方法である。
本発明は、Ｌｏｒｅｔ＋ｚの相図（Ｐｈｙｓｉｃｓ ａ
ｎｄ Ｃｈｅｗｓｔｒｙ ｏｆ Ｉｔ−Ｖｌ
ｃｏｍｐｏｕｎｄ、Ｎｏｒｔｈ Ｈｏ！１ａｎｄ、１
９６７）に基ずきセレンの割合が亜鉛に対して５７．５
ないし９２．５モルパーセントになる範囲内で混合し、
充填した原料全てが液相になる２５度まで一旦昇温し、
冷却過程に生成するＺｎＳｅを結晶成長に利用する。該
ＺｎＳｅ析出は結晶系転移の生ずる１４２０℃の温度以
下においても生じ、該組成では１１００℃以上の温度で
生じる。
また該結晶成長は、不活性ガスが１００から２０００気
圧程度の圧力がかかる装置で行うことが好ましい。
また成長容器としては石英を用いず、＊＊性の保てるカ
ーボン材料か、窒化ホウ素の容器を用いろことが好まし
い、またこの温度域ではセレンの蒸気圧が約４０から２
５０電圧に達するため、セレンの蒸発を防ぐことが好ま
しい、該セレンの蒸発を防ぐ方法としては、坩堝を封止
する方法、成長温度において予想されろ蒸気圧以上の不
活性ガスの圧を印加する方法等が例示できる。
原料を所定の温度、圧力で完全に溶融した後、坩堝を徐
々に冷却する０例えば坩堝の底部から冷却して行くと、
溶解度が変化するため、坩堝底部からＺｎＳｅが析出し
だし連続的に行うことにより、大型の単結晶が得られる
。The present invention was made to solve the above-mentioned problems, and contains 57.5 to 92.5 mol % of Se and 7.
This is a method for growing a ZnSe single crystal, in which a 5 to 42.5 mol % Zn-9e-based @ solution is formed, and the ZnSe single crystal is grown using the melt. The present invention is based on the phase diagram of Loret+z (Physics a
nd Chewstry of It-Vl
compound, North Ho! 1 and, 1
967), the ratio of selenium to zinc is 57.5
to 92.5 mole percent,
Once the temperature is raised to 25 degrees, where all the filled raw materials become liquid phase,
ZnSe generated during the cooling process is used for crystal growth. The ZnSe precipitation occurs even at temperatures below 1420°C where crystal system transition occurs, and for this composition occurs at temperatures above 1100°C. Further, it is preferable that the crystal growth is performed in an apparatus in which an inert gas is applied with a pressure of about 100 to 2000 atmospheres. In addition, it is preferable to use a container made of carbon material or boron nitride, which maintains its properties, instead of using quartz as the growth container.Also, in this temperature range, the vapor pressure of selenium is approximately 40 to 2.
50 voltage, it is preferable to prevent the evaporation of selenium. Methods for preventing the evaporation of selenium include sealing the crucible and applying an inert gas pressure higher than the expected vapor pressure at the growth temperature. Methods etc. can be exemplified. After the raw materials are completely melted at a predetermined temperature and pressure, the crucible is gradually cooled. For example, if cooling starts from the bottom of the crucible,
Since the solubility changes, ZnSe begins to precipitate from the bottom of the crucible, and by carrying out the process continuously, a large single crystal can be obtained.
従来の結晶成長法のＷｊ融法では、ＺｎＳｅを融点であ
る１１５２０℃で溶融し除冷をするという方法をとるた
め、結晶転移点を通過してしまい双晶の発生はやむを得
なりかた。また溶液法では温度が比較的低いために充分
な溶解度が得られずに大型結晶が得られかつがた。
本発明に依れば、結晶成長温度が転移点以下におさえら
れ、かつ転移点以下の温度で成長を行っているために双
晶発生が極力抑えられる。また成長温度が１１００℃以
上となっているために、溶媒であるセレンへのＺｎＳｅ
の溶解度が充分であるために比較的短時間で大型の単結
晶が得られる。In the WJ melting method, which is a conventional crystal growth method, ZnSe is melted at the melting point of 11,520° C. and slowly cooled, so that the crystal transition point is passed and the generation of twins is unavoidable. In addition, in the solution method, the temperature is relatively low, so sufficient solubility cannot be obtained, and large crystals cannot be obtained. According to the present invention, since the crystal growth temperature is kept below the transition point and the crystal growth is performed at a temperature below the transition point, the occurrence of twin crystals can be suppressed as much as possible. In addition, since the growth temperature is 1100°C or higher, ZnSe
Because of its sufficient solubility, large single crystals can be obtained in a relatively short time.
【実施例】
原料として６ナイン程度の純度のセしンと亜鉛を用意す
る。セレンのモルパーセントが７５％、亜鉛が２５％の
割合で混合する。原料が粉末であったとしても、このま
までは坩堝への充填率が低くなるので、−旦円ＩＩ＋影
の石英アンプルにいれ真空封入する。このときの石英ア
ンプルの形状は、成長に用いる坩堝と同じにしその直径
を若干ちいさめにする。封入した石英アンプルを縦型の
電気炉にいれセレン、亜鉛を溶融する。このとき反応し
てＺｎＳｅが生成することがあるが特に問題はない、充
分にアンプルを加熱し原料の均一度、充填度を高める。
加熱後アンプルを電気炉から取り出し、アンプルを開封
し原料を取り出す、取り出した原料を今度はカーボンま
たは窒化ホウ素製の坩堝に入れる。この原料割合では１
３００℃に加熱をすると、相図より系は全部）α相のみ
となり、ＺｎＳｅとしての割合は５０モル％となる。坩
堝を第１図に示す温度分布を持つ成長装置の中に配置し
、その雰囲×をアルゴンなどの不活性ガスとする。また
その圧力は、少なくとも１３００℃でのセレンの蒸気圧
である１２４％圧以上にする。
このとき、セレン溶媒の蒸発をできるだけ防ぐ方法とし
ては、坩堝を封止する方法、セレン雰囲電とする方法も
考えられる。溶融した原料を含む坩堝を回転を加えなが
ら、徐々に炉の低）Ｈ部に移動する、こうすることによ
り坩堝底部ではＺｎＳｅの過飽和が起こりＺｎＳｅ結晶
が析出しだす、そのときの移動速度は０． １から５ｍ
ｍ／ｈ ｒの速度で行う。坩堝移動を坩堝全体にわたっ
て行い完全に低温部への移動が終わったら室温まで冷却
し坩堝を取り出す。残ったセレン金属をＮａＯＨ水溶液
などで除去すると双晶密度の低い大型の単結晶が得られ
た。[Example] Sensine and zinc having a purity of about 6 nines are prepared as raw materials. The molar percentage of selenium is 75% and the ratio of zinc is 25%. Even if the raw material is a powder, the filling rate in the crucible will be low if it remains as it is, so it is placed in a quartz ampoule with a shadow of -Danen II and sealed in a vacuum. The shape of the quartz ampoule at this time is the same as that of the crucible used for growth, and its diameter is slightly smaller. The sealed quartz ampoule is placed in a vertical electric furnace to melt selenium and zinc. At this time, ZnSe may be generated by reaction, but there is no particular problem.The ampoule is sufficiently heated to increase the uniformity and filling degree of the raw material. After heating, the ampoule is taken out of the electric furnace, the ampoule is opened, and the raw material is taken out.The taken out raw material is then placed in a crucible made of carbon or boron nitride. At this raw material ratio, 1
When heated to 300° C., the phase diagram shows that the entire system becomes only the α phase, and the proportion of ZnSe is 50 mol %. The crucible is placed in a growth apparatus having the temperature distribution shown in FIG. 1, and the atmosphere is an inert gas such as argon. Further, the pressure is at least 124% pressure, which is the vapor pressure of selenium at 1300°C. At this time, as a method of preventing evaporation of the selenium solvent as much as possible, a method of sealing the crucible and a method of creating a selenium atmosphere can be considered. The crucible containing the molten raw material is rotated and gradually moved to the lower H part of the furnace. By doing this, supersaturation of ZnSe occurs at the bottom of the crucible and ZnSe crystals begin to precipitate. At that time, the moving speed is 0. 1 to 5m
Perform at a speed of m/hr. The crucible is moved over the entire crucible, and when the crucible has completely moved to the low temperature section, it is cooled to room temperature and the crucible is taken out. When the remaining selenium metal was removed with an aqueous NaOH solution, a large single crystal with a low twin density was obtained.
本発明に依れば従来不十分であった、ＺｎＳｅの単結晶
成長に於て充分な大きさと成長速度を持ち、なおかつ双
晶密度がきわめて低い単結晶を得ることが可能となった
。
４、 ｒ：！Ｊ面の簡単な説明
第１図は、実施例において使用した単結晶成長装置の概
略を示す断面図である。
成長容器 （２）カーボンヒーターサセプター
（４）カーボン坩堝
ＺｎＳｅ単結晶
ＺｎＳｅ＋セレン融液
炉内温度プロファイル
温度
図According to the present invention, it has become possible to obtain a single crystal of ZnSe that has a sufficient size and growth rate and has an extremely low twin crystal density, which has been insufficient in the past. 4. r:! Brief Explanation of J-plane FIG. 1 is a cross-sectional view schematically showing the single crystal growth apparatus used in the examples. Growth container (2) Carbon heater susceptor
(4) Carbon crucible ZnSe single crystal ZnSe + selenium melt furnace temperature profile temperature diagram
Claims (1)
５〜４２．５ｍｏｌ％のＺｎ−Ｓｅ系融液を形成し、該
融液を用いてＺｎＳｅ単結晶の成長を行なうＺｎＳｅ単
結晶の成長方法。(1) Se: 57.5 to 92.5 mol%, Zn: 7.
A method for growing a ZnSe single crystal, in which a Zn-Se based melt of 5 to 42.5 mol % is formed and a ZnSe single crystal is grown using the melt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28077788A JPH02129099A (en) | 1988-11-07 | 1988-11-07 | Growth of znse single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28077788A JPH02129099A (en) | 1988-11-07 | 1988-11-07 | Growth of znse single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02129099A true JPH02129099A (en) | 1990-05-17 |
| JPH0535720B2 JPH0535720B2 (en) | 1993-05-27 |
Family
ID=17629815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28077788A Granted JPH02129099A (en) | 1988-11-07 | 1988-11-07 | Growth of znse single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02129099A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5679151A (en) * | 1995-03-16 | 1997-10-21 | Kabushiki Kaisha Kobe Seiko Sho | Method for growing single crystal |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57183400A (en) * | 1981-05-07 | 1982-11-11 | Semiconductor Res Found | Method and apparatus for liquid-phase growth of 2-6 compound |
-
1988
- 1988-11-07 JP JP28077788A patent/JPH02129099A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57183400A (en) * | 1981-05-07 | 1982-11-11 | Semiconductor Res Found | Method and apparatus for liquid-phase growth of 2-6 compound |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0535720B2 (en) | 1993-05-27 |
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