JPS56104796A - Method of uniform doping of impurity by liquid capsule method and device therefor - Google Patents

Method of uniform doping of impurity by liquid capsule method and device therefor

Info

Publication number
JPS56104796A
JPS56104796A JP663780A JP663780A JPS56104796A JP S56104796 A JPS56104796 A JP S56104796A JP 663780 A JP663780 A JP 663780A JP 663780 A JP663780 A JP 663780A JP S56104796 A JPS56104796 A JP S56104796A
Authority
JP
Japan
Prior art keywords
melted
impurity
diaphragm
gaas
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP663780A
Other languages
Japanese (ja)
Other versions
JPS5934679B2 (en
Inventor
Shinichi Akai
Kazuhisa Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP663780A priority Critical patent/JPS5934679B2/en
Publication of JPS56104796A publication Critical patent/JPS56104796A/en
Publication of JPS5934679B2 publication Critical patent/JPS5934679B2/en
Expired legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: When a single crystal is produced by the liquid capsule pulling-up method using a plate with an opened part, a diaphragm with fine voids is fitted to the opened part and a desired impurity is added to the melted part on the diaphragm, whereby the single crystal pulled up is uniformly doped with the above impurity.
CONSTITUTION: For example, when GaAs is uniformly doped with chromium, GaAs polycrystal, boron oxide and a plate 11 provided with diaphragm 12 including fine voids 13 are placed in a quartz crucible 2 surrounded with a carbon crubicle 3 and they are heated with a carbon heater 4. The plate 11 floats between melted GaAs 9 and melted B2O3 8 so that a melted liquid part of GaAs permeating through the fine voides forms a layer 14 on the diaphragm 12. Then, a prescribed amount of an impurity of less than 1 segregation index such as Cr is added onto the melted layer and a monocrystal seed 7 held with the driving system 6 is brought into contact with the melted part 14 and pulled up according to a usual manner to form single crystal 10.
COPYRIGHT: (C)1981,JPO&Japio
JP663780A 1980-01-22 1980-01-22 Uniform impurity doping method and device using liquid capsule method Expired JPS5934679B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP663780A JPS5934679B2 (en) 1980-01-22 1980-01-22 Uniform impurity doping method and device using liquid capsule method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP663780A JPS5934679B2 (en) 1980-01-22 1980-01-22 Uniform impurity doping method and device using liquid capsule method

Publications (2)

Publication Number Publication Date
JPS56104796A true JPS56104796A (en) 1981-08-20
JPS5934679B2 JPS5934679B2 (en) 1984-08-23

Family

ID=11643877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP663780A Expired JPS5934679B2 (en) 1980-01-22 1980-01-22 Uniform impurity doping method and device using liquid capsule method

Country Status (1)

Country Link
JP (1) JPS5934679B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106597A (en) * 1980-12-19 1982-07-02 Natl Inst For Res In Inorg Mater Crystal growing device
JPS58161999A (en) * 1982-03-19 1983-09-26 Hitachi Cable Ltd Production of gallium arsenide single crystal having semi-insulation characteristic
US4478675A (en) * 1981-09-18 1984-10-23 Sumitomo Electric Industries, Inc. Method of producing GaAs single crystals doped with boron
JPS59178371U (en) * 1983-05-12 1984-11-29 日本電気株式会社 Melt heat convection suppressor
KR100487395B1 (en) * 2002-07-22 2005-05-03 엘지전자 주식회사 apparatus and method for growing laser medium

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106597A (en) * 1980-12-19 1982-07-02 Natl Inst For Res In Inorg Mater Crystal growing device
JPS5850954B2 (en) * 1980-12-19 1983-11-14 科学技術庁無機材質研究所長 crystal growth equipment
US4478675A (en) * 1981-09-18 1984-10-23 Sumitomo Electric Industries, Inc. Method of producing GaAs single crystals doped with boron
JPS58161999A (en) * 1982-03-19 1983-09-26 Hitachi Cable Ltd Production of gallium arsenide single crystal having semi-insulation characteristic
JPH0246560B2 (en) * 1982-03-19 1990-10-16 Hitachi Cable
JPS59178371U (en) * 1983-05-12 1984-11-29 日本電気株式会社 Melt heat convection suppressor
KR100487395B1 (en) * 2002-07-22 2005-05-03 엘지전자 주식회사 apparatus and method for growing laser medium

Also Published As

Publication number Publication date
JPS5934679B2 (en) 1984-08-23

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