JPS56104796A - Method of uniform doping of impurity by liquid capsule method and device therefor - Google Patents
Method of uniform doping of impurity by liquid capsule method and device thereforInfo
- Publication number
- JPS56104796A JPS56104796A JP663780A JP663780A JPS56104796A JP S56104796 A JPS56104796 A JP S56104796A JP 663780 A JP663780 A JP 663780A JP 663780 A JP663780 A JP 663780A JP S56104796 A JPS56104796 A JP S56104796A
- Authority
- JP
- Japan
- Prior art keywords
- melted
- impurity
- diaphragm
- gaas
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: When a single crystal is produced by the liquid capsule pulling-up method using a plate with an opened part, a diaphragm with fine voids is fitted to the opened part and a desired impurity is added to the melted part on the diaphragm, whereby the single crystal pulled up is uniformly doped with the above impurity.
CONSTITUTION: For example, when GaAs is uniformly doped with chromium, GaAs polycrystal, boron oxide and a plate 11 provided with diaphragm 12 including fine voids 13 are placed in a quartz crucible 2 surrounded with a carbon crubicle 3 and they are heated with a carbon heater 4. The plate 11 floats between melted GaAs 9 and melted B2O3 8 so that a melted liquid part of GaAs permeating through the fine voides forms a layer 14 on the diaphragm 12. Then, a prescribed amount of an impurity of less than 1 segregation index such as Cr is added onto the melted layer and a monocrystal seed 7 held with the driving system 6 is brought into contact with the melted part 14 and pulled up according to a usual manner to form single crystal 10.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP663780A JPS5934679B2 (en) | 1980-01-22 | 1980-01-22 | Uniform impurity doping method and device using liquid capsule method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP663780A JPS5934679B2 (en) | 1980-01-22 | 1980-01-22 | Uniform impurity doping method and device using liquid capsule method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56104796A true JPS56104796A (en) | 1981-08-20 |
JPS5934679B2 JPS5934679B2 (en) | 1984-08-23 |
Family
ID=11643877
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP663780A Expired JPS5934679B2 (en) | 1980-01-22 | 1980-01-22 | Uniform impurity doping method and device using liquid capsule method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5934679B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57106597A (en) * | 1980-12-19 | 1982-07-02 | Natl Inst For Res In Inorg Mater | Crystal growing device |
JPS58161999A (en) * | 1982-03-19 | 1983-09-26 | Hitachi Cable Ltd | Production of gallium arsenide single crystal having semi-insulation characteristic |
US4478675A (en) * | 1981-09-18 | 1984-10-23 | Sumitomo Electric Industries, Inc. | Method of producing GaAs single crystals doped with boron |
JPS59178371U (en) * | 1983-05-12 | 1984-11-29 | 日本電気株式会社 | Melt heat convection suppressor |
KR100487395B1 (en) * | 2002-07-22 | 2005-05-03 | 엘지전자 주식회사 | apparatus and method for growing laser medium |
-
1980
- 1980-01-22 JP JP663780A patent/JPS5934679B2/en not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57106597A (en) * | 1980-12-19 | 1982-07-02 | Natl Inst For Res In Inorg Mater | Crystal growing device |
JPS5850954B2 (en) * | 1980-12-19 | 1983-11-14 | 科学技術庁無機材質研究所長 | crystal growth equipment |
US4478675A (en) * | 1981-09-18 | 1984-10-23 | Sumitomo Electric Industries, Inc. | Method of producing GaAs single crystals doped with boron |
JPS58161999A (en) * | 1982-03-19 | 1983-09-26 | Hitachi Cable Ltd | Production of gallium arsenide single crystal having semi-insulation characteristic |
JPH0246560B2 (en) * | 1982-03-19 | 1990-10-16 | Hitachi Cable | |
JPS59178371U (en) * | 1983-05-12 | 1984-11-29 | 日本電気株式会社 | Melt heat convection suppressor |
KR100487395B1 (en) * | 2002-07-22 | 2005-05-03 | 엘지전자 주식회사 | apparatus and method for growing laser medium |
Also Published As
Publication number | Publication date |
---|---|
JPS5934679B2 (en) | 1984-08-23 |
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