JPS55140796A - Automatic crystal growing method - Google Patents

Automatic crystal growing method

Info

Publication number
JPS55140796A
JPS55140796A JP4892679A JP4892679A JPS55140796A JP S55140796 A JPS55140796 A JP S55140796A JP 4892679 A JP4892679 A JP 4892679A JP 4892679 A JP4892679 A JP 4892679A JP S55140796 A JPS55140796 A JP S55140796A
Authority
JP
Japan
Prior art keywords
crystal
electric power
crystal growing
section
growing state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4892679A
Other languages
Japanese (ja)
Inventor
Keigo Hoshikawa
Hiroshi Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4892679A priority Critical patent/JPS55140796A/en
Publication of JPS55140796A publication Critical patent/JPS55140796A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To minimize a crystal form change and quality unevenness due to accumulation of control errors by automatically controlling crystal growth corresponding to the length of a grown single crystal on the basis of a heating electric power program or a temp. program.
CONSTITUTION: Crystal growing state detecting section 12 is set to detect a crystal growing state such as the length and diameter of a grown crystal or the amount of a residual melt in crystal growing system 11 with accuracy. Electric power control section 9 is controlled with electric power control programmer 8 so that a preprogramed optimum heating electric power state is obtd. corresponding to the detected value of section 12, and the temp. of system 11 is maintained at an optimum crystal growing state with heating section 10.
COPYRIGHT: (C)1980,JPO&Japio
JP4892679A 1979-04-21 1979-04-21 Automatic crystal growing method Pending JPS55140796A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4892679A JPS55140796A (en) 1979-04-21 1979-04-21 Automatic crystal growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4892679A JPS55140796A (en) 1979-04-21 1979-04-21 Automatic crystal growing method

Publications (1)

Publication Number Publication Date
JPS55140796A true JPS55140796A (en) 1980-11-04

Family

ID=12816856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4892679A Pending JPS55140796A (en) 1979-04-21 1979-04-21 Automatic crystal growing method

Country Status (1)

Country Link
JP (1) JPS55140796A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5926996A (en) * 1982-08-03 1984-02-13 Toshiba Corp Preparation of single crystal
JPS59203795A (en) * 1983-05-07 1984-11-17 Agency Of Ind Science & Technol Apparatus provided with magnetic field generating apparatus for preparing semiconductor single crystal
JPH01282186A (en) * 1988-05-06 1989-11-14 Kokusai Electric Co Ltd Method for setting controlled variable in automatic drive of crystal producing device
JP2016044083A (en) * 2014-08-20 2016-04-04 三菱マテリアルテクノ株式会社 Single crystal silicon pull-up device and single crystal silicon pull-up method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4848392A (en) * 1971-12-29 1973-07-09
JPS4853927A (en) * 1971-11-08 1973-07-28

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4853927A (en) * 1971-11-08 1973-07-28
JPS4848392A (en) * 1971-12-29 1973-07-09

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5926996A (en) * 1982-08-03 1984-02-13 Toshiba Corp Preparation of single crystal
JPS59203795A (en) * 1983-05-07 1984-11-17 Agency Of Ind Science & Technol Apparatus provided with magnetic field generating apparatus for preparing semiconductor single crystal
JPS638079B2 (en) * 1983-05-07 1988-02-19 Kogyo Gijutsuin
JPH01282186A (en) * 1988-05-06 1989-11-14 Kokusai Electric Co Ltd Method for setting controlled variable in automatic drive of crystal producing device
JP2016044083A (en) * 2014-08-20 2016-04-04 三菱マテリアルテクノ株式会社 Single crystal silicon pull-up device and single crystal silicon pull-up method

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