JPS56164098A - Preparation of single crystal - Google Patents
Preparation of single crystalInfo
- Publication number
- JPS56164098A JPS56164098A JP6647280A JP6647280A JPS56164098A JP S56164098 A JPS56164098 A JP S56164098A JP 6647280 A JP6647280 A JP 6647280A JP 6647280 A JP6647280 A JP 6647280A JP S56164098 A JPS56164098 A JP S56164098A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- circuit
- seed crystal
- contact
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prepare a single cystal accurately in high productivity, by determining automatically the fittest seeding temperature of a melt from the relation between the contact times of a seed crystal and the melt and the change in weight of the seed crystal, and by starting automatically the growth of crystal from the seeding process.
CONSTITUTION: A raw material of crystal is melted, the time when the seed crystal 5 is brought into contact with the melt 2 by the lifting device 8 for pulling up a shaft is detected by the weight sensor 7, and the outputs of the counting circuit 9 of contact times and the detecting circuit 10 of contact weight are input to the memory circuit 11. After a fixed time, the seed crystal 5 is cut from the melt once, it is brought into contact with the melt 2 again, and the outputs of the circuit 9 and 10 are memorized in the circuit 11. In this manner the relation between the contact times and the change in weight are memorized in the memory 11, and the content of the memory is compared and judged by the comparing and judging circuit 12, to determine automatically the fittest seeding temperature of the melt 2. The seed crystal 5 is then pulled up, the diameter is controlled by the diameter regulating device 14, and the temperature of the melt 2 is kept at the fittest temperature by the high-frequency oscillator 15.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6647280A JPS56164098A (en) | 1980-05-21 | 1980-05-21 | Preparation of single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6647280A JPS56164098A (en) | 1980-05-21 | 1980-05-21 | Preparation of single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56164098A true JPS56164098A (en) | 1981-12-16 |
Family
ID=13316753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6647280A Pending JPS56164098A (en) | 1980-05-21 | 1980-05-21 | Preparation of single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56164098A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6036396A (en) * | 1983-08-05 | 1985-02-25 | Mitsubishi Monsanto Chem Co | Method for growing single crystal |
| JPH02204388A (en) * | 1989-02-02 | 1990-08-14 | Nippon Mining Co Ltd | Production of single crystal |
| JPH02204389A (en) * | 1989-02-02 | 1990-08-14 | Nippon Mining Co Ltd | Production of single crystal |
| JP2010095425A (en) * | 2008-10-20 | 2010-04-30 | Shin Etsu Handotai Co Ltd | Method for producing silicon single crystal |
| JP2017007884A (en) * | 2015-06-18 | 2017-01-12 | 住友金属鉱山株式会社 | Production method of single crystal |
-
1980
- 1980-05-21 JP JP6647280A patent/JPS56164098A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6036396A (en) * | 1983-08-05 | 1985-02-25 | Mitsubishi Monsanto Chem Co | Method for growing single crystal |
| JPH0327514B2 (en) * | 1983-08-05 | 1991-04-16 | Mitsubishi Kasei Horitetsuku Kk | |
| JPH02204388A (en) * | 1989-02-02 | 1990-08-14 | Nippon Mining Co Ltd | Production of single crystal |
| JPH02204389A (en) * | 1989-02-02 | 1990-08-14 | Nippon Mining Co Ltd | Production of single crystal |
| JP2010095425A (en) * | 2008-10-20 | 2010-04-30 | Shin Etsu Handotai Co Ltd | Method for producing silicon single crystal |
| JP2017007884A (en) * | 2015-06-18 | 2017-01-12 | 住友金属鉱山株式会社 | Production method of single crystal |
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