JPS5777094A - Manufacture of platelike crystal - Google Patents

Manufacture of platelike crystal

Info

Publication number
JPS5777094A
JPS5777094A JP15103580A JP15103580A JPS5777094A JP S5777094 A JPS5777094 A JP S5777094A JP 15103580 A JP15103580 A JP 15103580A JP 15103580 A JP15103580 A JP 15103580A JP S5777094 A JPS5777094 A JP S5777094A
Authority
JP
Japan
Prior art keywords
melt
crystal
slit
crucible
lid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15103580A
Other languages
Japanese (ja)
Inventor
Kiyomasa Sugii
Yasutaka Suemune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP15103580A priority Critical patent/JPS5777094A/en
Publication of JPS5777094A publication Critical patent/JPS5777094A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To easily obtain a platelike crystal having a uniform composition by connecting a melt system to a crystal manufacturing system with a slitlike passage, making the pressure of the former system higher than that of the latter system to raise the melt through the passage, and bringing the melt into contact with a seed crystal.
CONSTITUTION: A crucible 5 is placed in a melt system composed of an upper lid 8 having a slit and a lower lid 9 in a vertically movable state. Starting material 6 for a melt and a liq. sealant 7 are put in the crucible 5, the material 6 is melted by heating, and a crucible moving shaft 16 is pushed up so that the lower part of the slit of the lid 8 is well soaked in the melt 6. The internal pressure of the melt system is then raised so that the melt 6 reaches the upper part of the slit, and after bringing a seed crystal 18 fixed to the tip of a crystal pulling shaft 17 into contact with the melt 6 at the upper part of the slit, the shaft 17 is raised at a constant speed to manufacture a platelike crystal 20.
COPYRIGHT: (C)1982,JPO&Japio
JP15103580A 1980-10-28 1980-10-28 Manufacture of platelike crystal Pending JPS5777094A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15103580A JPS5777094A (en) 1980-10-28 1980-10-28 Manufacture of platelike crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15103580A JPS5777094A (en) 1980-10-28 1980-10-28 Manufacture of platelike crystal

Publications (1)

Publication Number Publication Date
JPS5777094A true JPS5777094A (en) 1982-05-14

Family

ID=15509870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15103580A Pending JPS5777094A (en) 1980-10-28 1980-10-28 Manufacture of platelike crystal

Country Status (1)

Country Link
JP (1) JPS5777094A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6291488A (en) * 1985-06-10 1987-04-25 Sumitomo Electric Ind Ltd Production of semiconductor single crystal
JPS63185887A (en) * 1986-12-09 1988-08-01 エバラ ソーラー インコーポレイテッド Method of growing dendrite web crystal of silicon
JPS63199049A (en) * 1987-02-13 1988-08-17 Sumitomo Electric Ind Ltd Continuous crystal growth method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6291488A (en) * 1985-06-10 1987-04-25 Sumitomo Electric Ind Ltd Production of semiconductor single crystal
JPH0367996B2 (en) * 1985-06-10 1991-10-24 Sumitomo Electric Industries
JPS63185887A (en) * 1986-12-09 1988-08-01 エバラ ソーラー インコーポレイテッド Method of growing dendrite web crystal of silicon
JPS63199049A (en) * 1987-02-13 1988-08-17 Sumitomo Electric Ind Ltd Continuous crystal growth method

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