JPS57175794A - Automatic controlling method for diameter of single crystal - Google Patents
Automatic controlling method for diameter of single crystalInfo
- Publication number
- JPS57175794A JPS57175794A JP5864681A JP5864681A JPS57175794A JP S57175794 A JPS57175794 A JP S57175794A JP 5864681 A JP5864681 A JP 5864681A JP 5864681 A JP5864681 A JP 5864681A JP S57175794 A JPS57175794 A JP S57175794A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- pulling
- growing
- inputted
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To carry out the automatic controlling and growing of a single crystal in the whole growing process from a part just under a seed crystal to the tail part of thereof by the pulling up method, by measuring the crystal diameter precisely by the weight sensing and precise length measuring methods, and feeding the deviation from the set values back to the growing conditions.
CONSTITUTION: A voltage in proportion to the weight of a crystal in a load cell unit 1 is inputted to an interfacial unit 3 through an A/D converter 2, and the length of pulled up crystal in a magnetic scale (precise length measuring apparatus) is inputted to the interfacial unit 3. The code is converted and inputted to a computer 5 to calculate the crystal diameter in the growing. Set values from the crystal shoulder, drum to tail parts are programmed as pulling up functions. A code conversion of an output from the computer 5 is used in an interfacial unit 8 to input data to units of a temperature controller 9 and a pulling up speed controller 10 and control the melt temperature and pulling up speed.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5864681A JPS5935876B2 (en) | 1981-04-20 | 1981-04-20 | Single crystal automatic diameter control method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5864681A JPS5935876B2 (en) | 1981-04-20 | 1981-04-20 | Single crystal automatic diameter control method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57175794A true JPS57175794A (en) | 1982-10-28 |
JPS5935876B2 JPS5935876B2 (en) | 1984-08-31 |
Family
ID=13090344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5864681A Expired JPS5935876B2 (en) | 1981-04-20 | 1981-04-20 | Single crystal automatic diameter control method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5935876B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59184798A (en) * | 1983-04-04 | 1984-10-20 | Agency Of Ind Science & Technol | Preparation of group iii-v compound semiconductor single crystal |
JPS60176989A (en) * | 1984-02-22 | 1985-09-11 | Toshiba Corp | Preparatin of single crystal |
CN110512279A (en) * | 2019-10-15 | 2019-11-29 | 宁夏银和新能源科技有限公司 | It can be improved the single crystal growing furnace ending method of ending success rate |
-
1981
- 1981-04-20 JP JP5864681A patent/JPS5935876B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59184798A (en) * | 1983-04-04 | 1984-10-20 | Agency Of Ind Science & Technol | Preparation of group iii-v compound semiconductor single crystal |
JPS6339557B2 (en) * | 1983-04-04 | 1988-08-05 | Kogyo Gijutsuin | |
JPS60176989A (en) * | 1984-02-22 | 1985-09-11 | Toshiba Corp | Preparatin of single crystal |
CN110512279A (en) * | 2019-10-15 | 2019-11-29 | 宁夏银和新能源科技有限公司 | It can be improved the single crystal growing furnace ending method of ending success rate |
Also Published As
Publication number | Publication date |
---|---|
JPS5935876B2 (en) | 1984-08-31 |
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