JPS57175794A - Automatic controlling method for diameter of single crystal - Google Patents

Automatic controlling method for diameter of single crystal

Info

Publication number
JPS57175794A
JPS57175794A JP5864681A JP5864681A JPS57175794A JP S57175794 A JPS57175794 A JP S57175794A JP 5864681 A JP5864681 A JP 5864681A JP 5864681 A JP5864681 A JP 5864681A JP S57175794 A JPS57175794 A JP S57175794A
Authority
JP
Japan
Prior art keywords
crystal
pulling
growing
inputted
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5864681A
Other languages
Japanese (ja)
Other versions
JPS5935876B2 (en
Inventor
Hideshi Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5864681A priority Critical patent/JPS5935876B2/en
Publication of JPS57175794A publication Critical patent/JPS57175794A/en
Publication of JPS5935876B2 publication Critical patent/JPS5935876B2/en
Expired legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To carry out the automatic controlling and growing of a single crystal in the whole growing process from a part just under a seed crystal to the tail part of thereof by the pulling up method, by measuring the crystal diameter precisely by the weight sensing and precise length measuring methods, and feeding the deviation from the set values back to the growing conditions.
CONSTITUTION: A voltage in proportion to the weight of a crystal in a load cell unit 1 is inputted to an interfacial unit 3 through an A/D converter 2, and the length of pulled up crystal in a magnetic scale (precise length measuring apparatus) is inputted to the interfacial unit 3. The code is converted and inputted to a computer 5 to calculate the crystal diameter in the growing. Set values from the crystal shoulder, drum to tail parts are programmed as pulling up functions. A code conversion of an output from the computer 5 is used in an interfacial unit 8 to input data to units of a temperature controller 9 and a pulling up speed controller 10 and control the melt temperature and pulling up speed.
COPYRIGHT: (C)1982,JPO&Japio
JP5864681A 1981-04-20 1981-04-20 Single crystal automatic diameter control method Expired JPS5935876B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5864681A JPS5935876B2 (en) 1981-04-20 1981-04-20 Single crystal automatic diameter control method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5864681A JPS5935876B2 (en) 1981-04-20 1981-04-20 Single crystal automatic diameter control method

Publications (2)

Publication Number Publication Date
JPS57175794A true JPS57175794A (en) 1982-10-28
JPS5935876B2 JPS5935876B2 (en) 1984-08-31

Family

ID=13090344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5864681A Expired JPS5935876B2 (en) 1981-04-20 1981-04-20 Single crystal automatic diameter control method

Country Status (1)

Country Link
JP (1) JPS5935876B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184798A (en) * 1983-04-04 1984-10-20 Agency Of Ind Science & Technol Preparation of group iii-v compound semiconductor single crystal
JPS60176989A (en) * 1984-02-22 1985-09-11 Toshiba Corp Preparatin of single crystal
CN110512279A (en) * 2019-10-15 2019-11-29 宁夏银和新能源科技有限公司 It can be improved the single crystal growing furnace ending method of ending success rate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184798A (en) * 1983-04-04 1984-10-20 Agency Of Ind Science & Technol Preparation of group iii-v compound semiconductor single crystal
JPS6339557B2 (en) * 1983-04-04 1988-08-05 Kogyo Gijutsuin
JPS60176989A (en) * 1984-02-22 1985-09-11 Toshiba Corp Preparatin of single crystal
CN110512279A (en) * 2019-10-15 2019-11-29 宁夏银和新能源科技有限公司 It can be improved the single crystal growing furnace ending method of ending success rate

Also Published As

Publication number Publication date
JPS5935876B2 (en) 1984-08-31

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