JPS56164097A - Device for pulling up single crystal - Google Patents

Device for pulling up single crystal

Info

Publication number
JPS56164097A
JPS56164097A JP6857980A JP6857980A JPS56164097A JP S56164097 A JPS56164097 A JP S56164097A JP 6857980 A JP6857980 A JP 6857980A JP 6857980 A JP6857980 A JP 6857980A JP S56164097 A JPS56164097 A JP S56164097A
Authority
JP
Japan
Prior art keywords
melt
feeding
crucible
sample
fed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6857980A
Other languages
Japanese (ja)
Inventor
Takashi Shibakuchi
Yoshio Fukushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP6857980A priority Critical patent/JPS56164097A/en
Publication of JPS56164097A publication Critical patent/JPS56164097A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a high-quality and long single cystal, by equipping a melt feeder at the tip of a feeding cylinder for sample powder inserted from the outside of an insulating cylinder into its inside, feeding the melt from the feeder to a crucible.
CONSTITUTION: The platinum crucible 3 is heated by the high-frequency induction coil 9 while sample powder being fed to the crucible 3 by a batch method, to give a sample melt. A single crystal is pulled up using the pulling up rod 8 with the attached seed crystal S. With the operation, the sample powder is fed from the mouth of the sample feeding cyliner 11 to the melt feeding pipe 13, wherein the smaple is melted. The supplementary amount of the melt from the feeding pipe 13 to the crucible 3 is proportional to the speed of pulling up the rod, so that the melt level 1 is always kept at a fixed position. The mouth of the feeding cylinder 12 is closed by the stopper 12 when the sample powder is not being fed. In this way, when the melt level is always kept at the fixed position, the change in temperature is prevented, to give a high-quality crystal.
COPYRIGHT: (C)1981,JPO&Japio
JP6857980A 1980-05-23 1980-05-23 Device for pulling up single crystal Pending JPS56164097A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6857980A JPS56164097A (en) 1980-05-23 1980-05-23 Device for pulling up single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6857980A JPS56164097A (en) 1980-05-23 1980-05-23 Device for pulling up single crystal

Publications (1)

Publication Number Publication Date
JPS56164097A true JPS56164097A (en) 1981-12-16

Family

ID=13377819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6857980A Pending JPS56164097A (en) 1980-05-23 1980-05-23 Device for pulling up single crystal

Country Status (1)

Country Link
JP (1) JPS56164097A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01119593A (en) * 1987-11-02 1989-05-11 Mitsubishi Metal Corp Crystal growing device
US5087321A (en) * 1987-12-08 1992-02-11 Nkk Corporation Manufacturing method and equipment of single silicon crystal
US5087429A (en) * 1988-04-28 1992-02-11 Nkk Corporation Method and apparatus for manufacturing silicon single crystals

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01119593A (en) * 1987-11-02 1989-05-11 Mitsubishi Metal Corp Crystal growing device
US5087321A (en) * 1987-12-08 1992-02-11 Nkk Corporation Manufacturing method and equipment of single silicon crystal
US5087429A (en) * 1988-04-28 1992-02-11 Nkk Corporation Method and apparatus for manufacturing silicon single crystals

Similar Documents

Publication Publication Date Title
KR960017934A (en) Supply Method of Silicon Granular Raw Material in Czochralski Single Crystal Growth and Its Supply Apparatus
GB1154240A (en) Improvements in and relating to methods of Crystal Pulling
JPS56164097A (en) Device for pulling up single crystal
JPS6465086A (en) Apparatus and process for producing single crystal rod
JPS5788037A (en) Discharging apparatus for molten glass from glass melting furnace
JPS57183392A (en) Apparatus for preparation of single crystal
JPS57179095A (en) Method and apparatus for manufacturing single crystal
GB1044592A (en) A method of melting a rod of crystalline material zone by zone
JPS56164096A (en) Device for pulling up single crystal
JPS56109893A (en) Single crystal manufacturing apparatus
JPS5547300A (en) Crystal pulling device
JPS55100296A (en) Production of silicon single crystal
JPS55128801A (en) Manufacture of large single crystal of ferrite with uniform composition
JPS5632397A (en) Silicon single crystal pulling apparatus
JPH03215383A (en) Raw material-supplying device
JPS5537460A (en) Structure of crucible
JPS62880B2 (en)
JPS56151163A (en) Dip forming device
JPS56164099A (en) Production unit for single crystal
Robertson et al. Observations on the unrestrained growth of germanium crystals
JPS57183394A (en) Method and apparatus for pulling single crystal
JPS5654299A (en) Growing method of lead molybdate single crystal
JPS5688895A (en) Growth of single crystal
JPS5560092A (en) Production of single crystal
JPS54128988A (en) Preparation of single crystal