JPS55113696A - Semiconductor single crystal growing method by pulling method - Google Patents

Semiconductor single crystal growing method by pulling method

Info

Publication number
JPS55113696A
JPS55113696A JP2115779A JP2115779A JPS55113696A JP S55113696 A JPS55113696 A JP S55113696A JP 2115779 A JP2115779 A JP 2115779A JP 2115779 A JP2115779 A JP 2115779A JP S55113696 A JPS55113696 A JP S55113696A
Authority
JP
Japan
Prior art keywords
pulling speed
deviation
crystal
pulling
temp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2115779A
Other languages
Japanese (ja)
Inventor
Keigo Hoshikawa
Yasusuke Akai
Fumio Muramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Kokusai Electric Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Kokusai Electric Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2115779A priority Critical patent/JPS55113696A/en
Publication of JPS55113696A publication Critical patent/JPS55113696A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To make the diameter of a prismatic semiconductor single crystal uniform and minimize crystal defects by controlling the actual pulling speed of the crystal; making the deviation between this speed and a standard pulling speed zero; and controlling the internal temp. of a furnace on the basis of this deviation.
CONSTITUTION: Pulling speed detector 26 is connected to motor driver 38 of crystal pulling motor 39 of diameter automatic control system C. Deviation is detected which is to a standard pulling speed set by pulling speed setter 21 or a standard pulling speed instructed through setter 21 from programmer 27 programming a proper pulling speed of each time in a crystal growing process. This deviation is amplified with deviation amplifier 22, level-converted through PID amplifier 23 performing a proportional integral operation, and cascade-connected to temp. automatic control system A. Thus, the deviation signal of the pulling speed is inputted in system A to adjust the temp. of furnace 15, whereby influence is exerted on the crystal diameter, and the deviation of the pulling speed of system C is converged to zero.
COPYRIGHT: (C)1980,JPO&Japio
JP2115779A 1979-02-23 1979-02-23 Semiconductor single crystal growing method by pulling method Pending JPS55113696A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2115779A JPS55113696A (en) 1979-02-23 1979-02-23 Semiconductor single crystal growing method by pulling method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2115779A JPS55113696A (en) 1979-02-23 1979-02-23 Semiconductor single crystal growing method by pulling method

Publications (1)

Publication Number Publication Date
JPS55113696A true JPS55113696A (en) 1980-09-02

Family

ID=12047069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2115779A Pending JPS55113696A (en) 1979-02-23 1979-02-23 Semiconductor single crystal growing method by pulling method

Country Status (1)

Country Link
JP (1) JPS55113696A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03137092A (en) * 1989-10-20 1991-06-11 Shin Etsu Handotai Co Ltd Formation of temperature pattern of heater and controlling device for growth of si single crystal with its temperature pattern utilized therefor
JPH05279174A (en) * 1992-03-30 1993-10-26 Sumitomo Metal Ind Ltd Method for lifting single crystal
JP2009214577A (en) * 2008-03-07 2009-09-24 Teraoka Shoji:Kk System capable of loading cargos in all directions

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4846573A (en) * 1971-10-18 1973-07-03

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4846573A (en) * 1971-10-18 1973-07-03

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03137092A (en) * 1989-10-20 1991-06-11 Shin Etsu Handotai Co Ltd Formation of temperature pattern of heater and controlling device for growth of si single crystal with its temperature pattern utilized therefor
JPH0774117B2 (en) * 1989-10-20 1995-08-09 信越半導体株式会社 Heater temperature pattern creation method and Si single crystal growth control apparatus using this temperature pattern
JPH05279174A (en) * 1992-03-30 1993-10-26 Sumitomo Metal Ind Ltd Method for lifting single crystal
JP2009214577A (en) * 2008-03-07 2009-09-24 Teraoka Shoji:Kk System capable of loading cargos in all directions

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