JPS55113696A - Semiconductor single crystal growing method by pulling method - Google Patents
Semiconductor single crystal growing method by pulling methodInfo
- Publication number
- JPS55113696A JPS55113696A JP2115779A JP2115779A JPS55113696A JP S55113696 A JPS55113696 A JP S55113696A JP 2115779 A JP2115779 A JP 2115779A JP 2115779 A JP2115779 A JP 2115779A JP S55113696 A JPS55113696 A JP S55113696A
- Authority
- JP
- Japan
- Prior art keywords
- pulling speed
- deviation
- crystal
- pulling
- temp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To make the diameter of a prismatic semiconductor single crystal uniform and minimize crystal defects by controlling the actual pulling speed of the crystal; making the deviation between this speed and a standard pulling speed zero; and controlling the internal temp. of a furnace on the basis of this deviation.
CONSTITUTION: Pulling speed detector 26 is connected to motor driver 38 of crystal pulling motor 39 of diameter automatic control system C. Deviation is detected which is to a standard pulling speed set by pulling speed setter 21 or a standard pulling speed instructed through setter 21 from programmer 27 programming a proper pulling speed of each time in a crystal growing process. This deviation is amplified with deviation amplifier 22, level-converted through PID amplifier 23 performing a proportional integral operation, and cascade-connected to temp. automatic control system A. Thus, the deviation signal of the pulling speed is inputted in system A to adjust the temp. of furnace 15, whereby influence is exerted on the crystal diameter, and the deviation of the pulling speed of system C is converged to zero.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2115779A JPS55113696A (en) | 1979-02-23 | 1979-02-23 | Semiconductor single crystal growing method by pulling method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2115779A JPS55113696A (en) | 1979-02-23 | 1979-02-23 | Semiconductor single crystal growing method by pulling method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55113696A true JPS55113696A (en) | 1980-09-02 |
Family
ID=12047069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2115779A Pending JPS55113696A (en) | 1979-02-23 | 1979-02-23 | Semiconductor single crystal growing method by pulling method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55113696A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03137092A (en) * | 1989-10-20 | 1991-06-11 | Shin Etsu Handotai Co Ltd | Formation of temperature pattern of heater and controlling device for growth of si single crystal with its temperature pattern utilized therefor |
JPH05279174A (en) * | 1992-03-30 | 1993-10-26 | Sumitomo Metal Ind Ltd | Method for lifting single crystal |
JP2009214577A (en) * | 2008-03-07 | 2009-09-24 | Teraoka Shoji:Kk | System capable of loading cargos in all directions |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4846573A (en) * | 1971-10-18 | 1973-07-03 |
-
1979
- 1979-02-23 JP JP2115779A patent/JPS55113696A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4846573A (en) * | 1971-10-18 | 1973-07-03 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03137092A (en) * | 1989-10-20 | 1991-06-11 | Shin Etsu Handotai Co Ltd | Formation of temperature pattern of heater and controlling device for growth of si single crystal with its temperature pattern utilized therefor |
JPH0774117B2 (en) * | 1989-10-20 | 1995-08-09 | 信越半導体株式会社 | Heater temperature pattern creation method and Si single crystal growth control apparatus using this temperature pattern |
JPH05279174A (en) * | 1992-03-30 | 1993-10-26 | Sumitomo Metal Ind Ltd | Method for lifting single crystal |
JP2009214577A (en) * | 2008-03-07 | 2009-09-24 | Teraoka Shoji:Kk | System capable of loading cargos in all directions |
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