JPH02293390A - Single crystal pull-up apparatus - Google Patents
Single crystal pull-up apparatusInfo
- Publication number
- JPH02293390A JPH02293390A JP10921089A JP10921089A JPH02293390A JP H02293390 A JPH02293390 A JP H02293390A JP 10921089 A JP10921089 A JP 10921089A JP 10921089 A JP10921089 A JP 10921089A JP H02293390 A JPH02293390 A JP H02293390A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- shaft
- supported
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 32
- 239000000155 melt Substances 0.000 claims description 17
- 239000011810 insulating material Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 239000007788 liquid Substances 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000012774 insulation material Substances 0.000 abstract 2
- 230000015271 coagulation Effects 0.000 abstract 1
- 238000005345 coagulation Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 206010025135 lupus erythematosus Diseases 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000013079 quasicrystal Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野１
本発明は単結晶の引上げ装置に関する。更に詳しくは、
チョクラルスキー法による結晶引上げ装置に用いるヒー
タの改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field 1] The present invention relates to a single crystal pulling apparatus. For more details,
This article relates to improvement of a heater used in a crystal pulling apparatus using the Czochralski method.
［従来の技術］
従来，シリコン結晶などの単結晶を引上げるチョクラル
スキー法の装置において、加熱装置は高周波誘導加熱法
においても抵抗加熱法においても、ルツポ側面方向から
のみ加熱ししかも加熱装置は固定されていた。[Prior Art] Conventionally, in the Czochralski method for pulling single crystals such as silicon crystals, the heating device heats only from the lateral direction of the pulling point, whether in the high-frequency induction heating method or the resistance heating method. It was fixed.
第２図は、従来の準結晶引き上げ装置の縦断面図を示す
ものである。サセブタ６に支持されたルッポ５は融Ｍ４
を収納しており、シードワイヤｌによりシードチャック
２を介して単結晶３が引上げられる。ヒータｌ２はサセ
ブタ６の外周に位置し、電極１４からサポートｌ３を介
してエネルギーを供給され、融液４を加熱する。なお９
は断熱材、１８はこれを支持するポスト、ｌ９はベース
プレートである。FIG. 2 shows a longitudinal cross-sectional view of a conventional quasicrystal pulling apparatus. Luppo 5 supported by susceptor 6 is melted M4
A single crystal 3 is pulled up via a seed chuck 2 by a seed wire 1. The heater l2 is located on the outer periphery of the susceptor 6, is supplied with energy from the electrode 14 via the support l3, and heats the melt 4. Note 9
is a heat insulating material, 18 is a post that supports this, and 19 is a base plate.
単結晶の引上げに応じて，クルーシブルシャフト８はベ
デスタル７を介してルッポ５の高さを調節する。つまり
、結晶育成後半に進むに従い融？夜が減少した時，ルッ
ポの位置がどんどん上昇する。従って、ヒータｌ２は必
ずしも最適な位置にあるとは限らない．
ルツボが上昇すると、サセブタ６の下部とヒータｌ２の
間には大きな空間があいてしまい，伝熱上非効率的とな
るだけでなく、サセブタ６や融液４に入ってくる熱量よ
りも出てゆく熱徹の方が多くなる場合があり、その場合
には、融液は結晶側でなく、ルツボ側から凝固してしま
う。こうなってしまうと、ヒータのパワーを上げるだけ
では追いつかず、ルッポ５の位置を下げなければならな
い。これは特に結晶育成を自動制御で行おうとする場合
問題となる。According to the pulling of the single crystal, the crucible shaft 8 adjusts the height of the lupus 5 via the vedestal 7. In other words, as we progress to the second half of crystal growth, will it melt? As the night decreases, Luppo's position rises more and more. Therefore, heater l2 is not necessarily located at the optimal position. When the crucible rises, there is a large space between the lower part of the susceptor 6 and the heater 12, which not only makes heat transfer inefficient, but also causes a larger amount of heat to come out than the amount of heat that enters the susceptor 6 and the melt 4. There are cases where the amount of heat is increased, and in that case, the melt solidifies not from the crystal side but from the crucible side. If this happens, simply increasing the power of the heater will not be enough to catch up, and the position of Luppo 5 will have to be lowered. This becomes a problem especially when attempting to automatically control crystal growth.
叉、ルツボ５の側面からの加熱により、融液４の対流は
ルツポ５の側面に沿って上昇する．従って，ルツポから
溶出する酸素の結晶へ溶け込む濃度を制御するには、ル
ツボに沿って上昇する熱対流を制御する必要があり、従
来、融液に磁界を加える等の大がかりな装置をもって熱
対流を制御せざるをえなかった。Furthermore, due to the heating from the side of the crucible 5, the convection current of the melt 4 rises along the side of the crucible 5. Therefore, in order to control the concentration of oxygen dissolved in the crystals eluted from the crucible, it is necessary to control the thermal convection that rises along the crucible. I had to control it.
一方，従来技術として断熱板を上下動可能にした特開昭
６２−２０２８９２号がある．単結晶引上げ時は、融液
のレベルを一定とするために、引上げの進行に従いルツ
ポがヒータに対して上昇していく。この場合に、特開昭
６２−２０２８９２に示されているように、単に断熱扱
を上下させるだけでは、冷却の方向，すなわち、凝固の
方向にしかコントロールすることができない。また、ル
ツボ下部からの熱の放散が防車されていない．従って、
熱的なコントロールは難しい。従って、この技術では融
液に原料を連続投入する場合には使用が難しい。又，ヒ
ータパワーも無駄に使うことになる。On the other hand, as a prior art, there is Japanese Patent Application Laid-Open No. 62-202892 in which a heat insulating board can be moved up and down. When pulling a single crystal, in order to keep the level of the melt constant, as the pulling progresses, the lupus is raised relative to the heater. In this case, as shown in Japanese Unexamined Patent Publication No. 62-202892, simply by increasing or decreasing the adiabatic treatment, it is possible to control only the direction of cooling, that is, the direction of solidification. Also, heat dissipation from the bottom of the crucible is not prevented. Therefore,
Thermal control is difficult. Therefore, this technique is difficult to use when raw materials are continuously introduced into the melt. Moreover, the heater power is also wasted.
〔発明が解決しようとする課題ｌ
結晶育成後半に融液が減少した時，伝熱上非効率的とな
る問題や、単に断熱板を上下させるだけでは解決するこ
とのできない問題を簡易な手段によって解決することを
目的とする．
〔課題を解決するための手段］
本発明では、従来ルツボの側面に設けたヒータの他に、
サセプタ下に、ルツボの上下動と連動して上下可能なロ
ーアーヒー夕を設け、さらにその下に，同じくルツボの
上下動に連動する断熱材を設けた。[Problem to be solved by the invention 1] It is possible to solve the problem of inefficiency in terms of heat transfer when the melt decreases in the latter half of crystal growth, and the problem that cannot be solved by simply moving the heat insulating plates up and down, by simple means. The purpose is to solve the problem. [Means for Solving the Problem] In the present invention, in addition to the conventional heater provided on the side surface of the crucible,
A lower heater that can be moved up and down in conjunction with the vertical movement of the crucible was provided below the susceptor, and further below that, a heat insulator was provided that also moved in conjunction with the vertical movement of the crucible.
〔作用ｊ
本発明はルツポ下に従来のヒータとは別体のローアーヒ
ータを設け，これをルツポの上下動に連動して上下させ
る。この装置によれば，加熱の方向をコントロールする
ことができ、引上げの進行にかかわらず，加熱を調節す
ることができ安定である。又、ルツボ下部からの熱の逃
げも当然減少する。従ってヒータバワーも無駄な《使う
ことができる。しかも、融液へ原料を連続投入する際も
、融ｆｉ温度をコントロールすることが容易となる。[Operation j] The present invention provides a lower heater separate from the conventional heater below the receptacle, and moves it up and down in conjunction with the vertical movement of the receptacle. According to this device, the direction of heating can be controlled, and the heating can be adjusted and stabilized regardless of the progress of pulling. Furthermore, the loss of heat from the lower part of the crucible is naturally reduced. Therefore, the heater power can also be used in vain. Furthermore, it becomes easy to control the melt fi temperature even when raw materials are continuously introduced into the melt.
第１図を堅照してこれを説明すると、単結晶引上げ装置
３０において、ファーネスＩ５の外部に駆動装置ｌ７を
設ける。駆動装置Ｉ７に連結したスクリュー１６により
上下するプレート２０にはクルーシブルシャフト８とロ
ーアーヒータ支持シャフト１１が立設されており，これ
らのシャフトはファーネス１５の下部壁を貫通して炉内
に挿入されている。クルーシブルシャフト８はベデスタ
ル７を介してルツボを支持し、シャフトｌ１は断熱材９
を貫き、ローアーヒーター電極２ｌを介してローアーヒ
ータ１０を支持し、上下機構を形成する。To explain this with reference to FIG. 1, in the single crystal pulling apparatus 30, a driving device 17 is provided outside the furnace I5. A crucible shaft 8 and a lower heater support shaft 11 are erected on a plate 20 that is moved up and down by a screw 16 connected to a drive device I7, and these shafts are inserted into the furnace by penetrating the lower wall of the furnace 15. There is. The crucible shaft 8 supports the crucible via the bedestal 7, and the shaft l1 has a heat insulating material 9.
The lower heater 10 is supported through the lower heater electrode 2l, forming an up-and-down mechanism.
ローアーヒータ１０及び断熱材９は、プレート２０を介
してクルーシブルシャフト８と連結しているため、ルツ
ボの上下動に連動して上下する。Since the lower heater 10 and the heat insulating material 9 are connected to the crucible shaft 8 via the plate 20, they move up and down in conjunction with the up and down movement of the crucible.
従って，ルツボ高さがどの位置にあろうとも効率的にル
ツポに熱を供給することができる。従って、ルッポが側
面のヒータに対し高い位置にきても、側面のヒータｌ２
のパワーを上げな《とも、融液に安定した熱量を供給す
ることができる。このため融液がルッポ側から凝固する
ような現象は防止される．
ローアーヒータＩＯは、側面のヒータ１２とは独立にコ
ントロールすることができる。このため融液の熱対流の
コントロールを自由に行うことができ、結晶に取込まれ
る酸素濃度の制御も可能となる。Therefore, heat can be efficiently supplied to the crucible regardless of the crucible height. Therefore, even if Lupo is at a higher position than the side heater, the side heater l2
It is possible to supply a stable amount of heat to the melt without increasing the power. This prevents the melt from solidifying from the Lupo side. The lower heater IO can be controlled independently of the side heaters 12. Therefore, it is possible to freely control the thermal convection of the melt, and it is also possible to control the oxygen concentration taken into the crystal.
［実施例１ 第１図に本発明の実施例を示した。[Example 1 FIG. 1 shows an embodiment of the present invention.
ファーネスｌ５内に，クルーシブルシャフト８に支えら
れたべデスタル７の上にサセブタ６を載置し，石英ルッ
ポ５がその中に収納され、このルツボ内に融Ｍ４を保持
している。単結晶３はシードチャック２を介してシード
ワイヤｌにより融液４の表面から引上げられる。ローア
ーヒークＩＯはその熱放散を遮断する断熱材９と共に、
シャフト１ｋを介してプレート２０によって支えられて
いる。プレート２０はクルーシブルシャフト８をも支え
ており、スクリエーｌ６と駆動装置ｌ７により上下動す
る。A susceptor 6 is placed on a pedestal 7 supported by a crucible shaft 8 in a furnace 15, a quartz lupus 5 is housed therein, and a fused M4 is held in this crucible. The single crystal 3 is pulled up from the surface of the melt 4 via the seed chuck 2 by the seed wire 1. The lower heat IO has a heat insulating material 9 that blocks its heat dissipation.
It is supported by a plate 20 via a shaft 1k. The plate 20 also supports the crucible shaft 8, and is moved up and down by a scrier l6 and a drive device l7.
第３図はローアーヒータＩＯの実施態様の平面図を示し
たもので、円根状とした．
この装置によれば、結晶育成後半においても、融液がル
ツボ…リで凝固することなく正常にシリコン単結晶を育
成することができ、又、結晶中の酸素濃度も制御するこ
とが可能であった。Figure 3 shows a plan view of an embodiment of the lower heater IO, which has a circular root shape. According to this device, even in the latter half of crystal growth, silicon single crystals can be grown normally without the melt solidifying in the crucible, and it is also possible to control the oxygen concentration in the crystal. Ta.
［定明の効果］
本発明の単結晶引上げ装置ではローアーヒータがルツポ
の上下動と連動して上下し，ルツポが従来の側面のヒー
タに対して相対的に高い位置にあっても，ルッポ融液な
効率的に加熱することができ，融液の結晶以外の場所か
らの凝固を防【ｌ：することかできる。[Effect of fixed light] In the single crystal pulling apparatus of the present invention, the lower heater moves up and down in conjunction with the up and down movement of the lupus, and even if the lupus is located at a relatively high position relative to the conventional side heater, the lupus is melted. It is possible to efficiently heat the liquid and prevent the melt from solidifying in places other than the crystals.
又、本発明の装置は，従来の側面のヒータと組み合わせ
で熱量調整を行うことによりルッポ内の融液の熱対流を
制御することができ、結晶育成時に、結晶に取込まれる
酸素濃度を制御することが可能である．In addition, the device of the present invention can control the thermal convection of the melt in the Lupo by adjusting the amount of heat in combination with a conventional side heater, and can control the oxygen concentration taken into the crystal during crystal growth. It is possible to do so.
第１図は本発明の実施例の縦断面図，第２図は従来技術
の縦断面図、第３図は本発明のロアーヒータの平面図で
ある，
ｌ・・・シードワイヤ
２・・・シードチャック
３・・・単結晶
４・・・融液
５・・・ルツボ
６・・−サセブタ
７・・・ペデスタル
８・・・クルーシブルシャフト
９・・一断熱材
ＩＯ・・・ローアーヒータ
ｌ１・・・シャフト
ｌ２・・−ヒーク
ｌ３・−・サポート
ｌ４・・一電極
ｌ５・・・ファーネス
ｌ６・・・スクリュー
１７・・一駆動装置
ｌ８・・−ポスト
Ｉ９・・一ベースプレート
２０・・・プレート
２ｌ・・・ローアーヒーター電険
２２・−・ルツボ回転駆動装置Fig. 1 is a longitudinal cross-sectional view of an embodiment of the present invention, Fig. 2 is a longitudinal cross-sectional view of a conventional technique, and Fig. 3 is a plan view of a lower heater of the present invention. Chuck 3... Single crystal 4... Melt 5... Crucible 6... - Sustainer 7... Pedestal 8... Crucible shaft 9... Insulating material IO... Lower heater l1... Shaft l2...-Heak l3...Support l4...One electrode l5...Furnace l6...Screw 17...One drive device l8...-Post I9...One base plate 20...Plate 2l...・Lower heater electrical protection 22 --- Crucible rotation drive device
Claims (1)
結晶引上げ装置において、多結晶を溶融するルツボ下に
ルツボと連動して上下動可能な別体のローアーヒータお
よび断熱材を設置したことを特徴とする単結晶引上げ装 置。[Scope of Claims] 1. In a single crystal pulling device that pulls a single crystal from a molten polycrystal while growing it, a separate lower heater and a heat insulating material are provided below a crucible that melts the polycrystal and are movable up and down in conjunction with the crucible. A single crystal pulling device characterized by being equipped with.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10921089A JPH02293390A (en) | 1989-05-01 | 1989-05-01 | Single crystal pull-up apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10921089A JPH02293390A (en) | 1989-05-01 | 1989-05-01 | Single crystal pull-up apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02293390A true JPH02293390A (en) | 1990-12-04 |
Family
ID=14504391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10921089A Pending JPH02293390A (en) | 1989-05-01 | 1989-05-01 | Single crystal pull-up apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02293390A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0781868A3 (en) * | 1995-12-26 | 1998-04-22 | Shin-Etsu Handotai Company Limited | A single crystal growing apparatus |
| JP2002326888A (en) * | 2001-05-01 | 2002-11-12 | Shin Etsu Handotai Co Ltd | Device for manufacturing semiconductor single crystal and method for manufacturing silicon single crystal using the same |
| JP2013124192A (en) * | 2011-12-13 | 2013-06-24 | Shin Etsu Handotai Co Ltd | Single crystal pulling apparatus |
| WO2015063992A1 (en) * | 2013-10-29 | 2015-05-07 | 信越半導体株式会社 | Silicon single crystal puller |
-
1989
- 1989-05-01 JP JP10921089A patent/JPH02293390A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0781868A3 (en) * | 1995-12-26 | 1998-04-22 | Shin-Etsu Handotai Company Limited | A single crystal growing apparatus |
| JP2002326888A (en) * | 2001-05-01 | 2002-11-12 | Shin Etsu Handotai Co Ltd | Device for manufacturing semiconductor single crystal and method for manufacturing silicon single crystal using the same |
| JP2013124192A (en) * | 2011-12-13 | 2013-06-24 | Shin Etsu Handotai Co Ltd | Single crystal pulling apparatus |
| WO2015063992A1 (en) * | 2013-10-29 | 2015-05-07 | 信越半導体株式会社 | Silicon single crystal puller |
| JP2015086088A (en) * | 2013-10-29 | 2015-05-07 | 信越半導体株式会社 | Silicon single crystal pulling apparatus |
| CN105531406A (en) * | 2013-10-29 | 2016-04-27 | 信越半导体株式会社 | Silicon single crystal puller |
| KR20160075498A (en) * | 2013-10-29 | 2016-06-29 | 신에쯔 한도타이 가부시키가이샤 | Silicon single crystal puller |
| US20160194783A1 (en) * | 2013-10-29 | 2016-07-07 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal pulling apparatus |
| US9869034B2 (en) | 2013-10-29 | 2018-01-16 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal pulling apparatus comprising a vertically movable supporting member holding the heater and shield |
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