JPH03153595A - Device for pulling single crystal - Google Patents
Device for pulling single crystalInfo
- Publication number
- JPH03153595A JPH03153595A JP29370589A JP29370589A JPH03153595A JP H03153595 A JPH03153595 A JP H03153595A JP 29370589 A JP29370589 A JP 29370589A JP 29370589 A JP29370589 A JP 29370589A JP H03153595 A JPH03153595 A JP H03153595A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- screen
- radiation screen
- pulled
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 67
- 230000005855 radiation Effects 0.000 claims abstract description 36
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000001816 cooling Methods 0.000 abstract description 16
- 230000007547 defect Effects 0.000 abstract description 15
- 230000000694 effects Effects 0.000 description 14
- 239000011810 insulating material Substances 0.000 description 5
- 230000014759 maintenance of location Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、輻射スクリーン配設したＣＺ単結晶引上げ
装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a CZ single crystal pulling apparatus equipped with a radiation screen.
（従来の技術）
チョクラルスキー法（ＣＺ法）では、種結晶をルツボ内
のＳｉ融液に浸し、これを回転させながら上方へ引上げ
て、種結晶下に単結晶を成長させる。この場合、ルツボ
内のＳｉ融液は、当初ルツボ内に収容したＳｉ原料をル
ツボ周囲に配した円筒形の発熱体により加熱溶融せしめ
るとともに、単結晶の引上げ中においても加熱せしめる
ようになっている。(Prior Art) In the Czochralski method (CZ method), a seed crystal is immersed in a Si melt in a crucible and pulled upward while rotating to grow a single crystal under the seed crystal. In this case, the Si melt in the crucible is heated and melted by a cylindrical heating element placed around the crucible to heat the Si raw material initially housed in the crucible, and is also heated during the pulling of the single crystal. .
また、単結晶は通常０．５〜１．Ｏｎｕ＋＋／ｍｉｎの
速度で引上げられるが、その引上げ中の冷却速度は単結
晶の品質と密接な関係がある。Moreover, single crystals are usually 0.5 to 1. The single crystal is pulled at a speed of Onu++/min, and the cooling rate during the pulling is closely related to the quality of the single crystal.
一般に単結晶中の酸素誘起に起因する積層欠陥たる面状
格子欠陥（ＯＳＦ）は、冷却時における９００℃〜８０
０°Ｃ間の保持時間が長くなると多発し、単結晶の品質
を著しく低下させる。In general, planar lattice defects (OSF), which are stacking faults caused by oxygen in single crystals, occur between 900°C and 80°C during cooling.
If the holding time between 0°C becomes longer, this will occur more frequently, and the quality of the single crystal will be significantly degraded.
ここで保持時間について説明すると、第３図はＳｉ融液
面からの引上げ距離を縦軸に、そして引上げ単結晶の温
度を横軸に表わすグラフであるが、例えば６”′φ単結
晶では、液面３３０ｍｍ〜４６０ａｍの位置にある引上
げ単結晶部分が、９００°Ｃ〜８００°Ｃの温度を有し
ていることを示している。したがって、単結晶の引上げ
速度を、今仮に１．０ｍｍ／ｍｉｎとすると、単結晶は
（４６０ｍｍ−３３０ｍｍ） ／１．０ｍｍ／ｍ１ｎ＝
１３０ｍ１ｎの間、９００℃〜８００℃の温度を保持
していることになる。そして上記面状格子欠陥（ＯＳＦ
）を防止するためには、単結晶の冷却速度を上げ、上記
９００°Ｃ〜８００°Ｃの温度保持時間を可及的に短く
する必要がある。ところが、上記したＣＺ法では、引上
げ単結晶の周囲には、発熱体、ルツボ及びＳｉ融液等の
輻射熱源があって、これから受ける輻射熱量が極めて大
きく、必然的に当該温度域における保持時間を短くでき
ないという問題点があった。To explain the holding time here, Fig. 3 is a graph in which the vertical axis represents the pulling distance from the Si melt surface and the horizontal axis represents the temperature of the pulled single crystal. This shows that the pulled single crystal part located at a liquid level of 330 mm to 460 am has a temperature of 900°C to 800°C. Therefore, if the pulling speed of the single crystal is now 1.0 mm/ If min, the single crystal is (460mm-330mm) /1.0mm/m1n=
This means that a temperature of 900°C to 800°C is maintained for 130 m1n. And the above-mentioned planar lattice defect (OSF)
) In order to prevent this, it is necessary to increase the cooling rate of the single crystal and shorten the temperature holding time from 900°C to 800°C as much as possible. However, in the CZ method described above, there are radiant heat sources such as heating elements, crucibles, and Si melt around the pulled single crystal, and the amount of radiant heat received from these sources is extremely large, and the holding time in the temperature range is inevitably short. There was a problem that it could not be made shorter.
（発明か解決しようとする課題）
上述した所定温度域における保持時間短縮の問題は、引
上げ単結晶の回りに輻射スクリーンを配設することによ
って解決する。しかし、面状格子欠陥（ＯＳＦ）の発生
防止は、引上げ単結晶の寸法に応じた形状・寸法を有す
る輻射スクリーンの配設によらなければ達成の図れない
ことが判明した。(Problems to be Solved by the Invention) The above-mentioned problem of shortening the holding time in a predetermined temperature range is solved by disposing a radiation screen around the pulled single crystal. However, it has been found that prevention of the occurrence of planar lattice defects (OSF) can only be achieved by providing a radiation screen whose shape and dimensions correspond to the dimensions of the pulled single crystal.
例えば、第４図は第３図と同一の単結晶引上げ条件のも
とで、充分な輻射遮断長さを有しない輻射スクリーン（
第４図に於いてはｂ／ａ＝１．２５）を配設した場合に
おけるＳｉ融液面からの引上げ距離と単結晶の温度との
関係を示すグラフである。かかる場合に２第３図と比較
して明らかなように、不具合な輻射遮断長さの輻射スク
リーンにおいては、１０００℃乃至１１００°Ｃ以上の
初期の冷却速度の向上には寄与するものの、９００℃〜
８００°Ｃ間の保持時間は輻射スクリーンの有無に関係
なく同じである。したがって、９００℃〜８００℃の温
度域における保持時間に依存する面状格子欠陥（ＯＳＦ
）を防止するためには、引上げ単結晶の寸法に応じた適
切な輻射スクリーンを配設する必要があることが分かる
。For example, under the same single crystal pulling conditions as in Figure 3, Figure 4 shows a radiation screen (
FIG. 4 is a graph showing the relationship between the pulling distance from the Si melt surface and the temperature of the single crystal when b/a=1.25) is provided. In such a case, as is clear from a comparison with Figure 2 and Figure 3, in a radiation screen with an inadequate radiation blocking length, although it contributes to improving the initial cooling rate from 1000°C to 1100°C or more, the temperature at 900°C ~
The holding time between 800°C is the same with or without the radiant screen. Therefore, the planar lattice defects (OSF
), it is found that it is necessary to provide an appropriate radiation screen according to the dimensions of the pulled single crystal.
本発明は、上記実情下において、面状格子欠陥（ＯＳＦ
）の発生防止を達成すべく、引上げ単結晶の径を一定と
したとき、逆截頭円錐計輻射スクリーンの形状・寸法と
引上げ単結晶の冷却曲線がどのように変化してくるかを
実験し、該実験で得られた知見により完成されたもので
ある。Under the above-mentioned circumstances, the present invention provides planar lattice defects (OSF).
), we conducted an experiment to examine how the shape and dimensions of the inverted truncated conical radiation screen and the cooling curve of the pulled single crystal change when the diameter of the pulled single crystal is constant. , was completed based on the knowledge obtained from the experiment.
ここでａ ／ ｃ ＝ １．１〜２．０である理由は、
１．１より小の場合には、操業上支障を生ずるおそれが
あるためであり、例えば輻射スクリーンの配設に多大な
調整を要することがあげられる。更に、２．０以上の場
合には、融液及びルツボからの輻射熱を遮断することが
図れないためである。The reason why a/c = 1.1 to 2.0 here is,
This is because if it is smaller than 1.1, there is a risk of operational problems, and for example, a large amount of adjustment may be required in the arrangement of the radiation screen. Furthermore, if it is 2.0 or more, it is impossible to block the radiant heat from the melt and the crucible.
また、ｂ ／ ｃ≧２．０の関係は、引上げ単結晶の冷
却速度と輻射スクリーンの輻射熱遮断効果、とりわけ、
輻射スクリーンの放散熱量に起因するものであり、後述
する実験結果からの知見に基く。In addition, the relationship b/c≧2.0 depends on the cooling rate of the pulled single crystal and the radiant heat blocking effect of the radiant screen, especially,
This is due to the amount of heat dissipated by the radiant screen, and is based on knowledge from experimental results described below.
（課題を解決するための手段）
すなわち、本発明は、引上げ単結晶の回りに位置せしめ
られる逆裁頭円錐形の輻射スクリーンを具備した単結晶
引上げ装置であって、前記輻射スクリーンの裁頭部の直
径なａ、同輻射スクリーンの高さをｂ、引上げ単結晶の
直径をＣとしたとき、ａ ／ ｃ ＝ １．１〜２．０
であり、且つ、ｂ ／ ｃ≧２．０であるとされる。(Means for Solving the Problems) That is, the present invention provides a single crystal pulling apparatus equipped with an inverted truncated conical radiation screen positioned around a pulled single crystal, wherein the truncated head of the radiation screen When a is the diameter of , b is the height of the radiation screen, and C is the diameter of the pulled single crystal, a / c = 1.1 to 2.0
and b/c≧2.0.
（作 用）
上記構成によれば、引上げ単結晶の９００℃〜８００℃
の保持温度が可及的に短くされ、面状格子欠陥（ＯＳＦ
）の発生は防止される。(Function) According to the above configuration, the temperature of the pulled single crystal is 900°C to 800°C.
The holding temperature of lattice defect (OSF) is kept as short as possible, and the
) will be prevented from occurring.
（実施例） 以下、本発明を添付図面に基いて説明する。(Example) Hereinafter, the present invention will be explained based on the accompanying drawings.
第１図は本発明装置の断面図を示し、同図中、１は反応
容器、２はルツボ、３はヒータ、４はＳｉ融液、５は引
上げ単結晶である。上記反応容器工の内壁には張り出し
支材６が固着され、該張り出し支材６上に略々逆裁頭円
錐形の輻射スクリーン７が取付けられている。そして、
上記輻射スクリーンの裁頭部の直径ａは引上げ単結晶５
の形をＣとしたときａ／ｃ＝１．１〜２．０の関係を充
足するように設定され、また輻射スクリーン７の高さは
ｂ ／ ｃ≧２．０の関係を充足するように設定されて
いる。FIG. 1 shows a sectional view of the apparatus of the present invention, in which 1 is a reaction vessel, 2 is a crucible, 3 is a heater, 4 is a Si melt, and 5 is a pulled single crystal. An overhanging strut 6 is fixed to the inner wall of the reaction vessel, and a radiation screen 7 having a substantially inverted truncated conical shape is mounted on the overhanging strut 6. and,
The diameter a of the truncated part of the radiation screen above is a pulled single crystal 5
When the shape of is C, the height of the radiation screen 7 is set to satisfy the relationship a/c=1.1 to 2.0, and the height of the radiation screen 7 is set to satisfy the relationship b/c≧2.0. It is set.
８は冷却効果を増すために輻射スクリーン７の上部外周
部に取付けた断熱材、Ａは同じく冷却効果を増すために
輻射スクリーン７の下部外周部に取付けた断熱材であっ
て、黒煙フェルト又は石英フェルトから成り、下部に取
付けられた断熱材は、断熱効果を微調整できるように、
各層取付は取外し可能な積層構造とされている。実施例
においては、当該断熱材は輻射スクリーンの下端から高
さ２５０ｍｍの範囲の外周部に取付けられている。8 is a heat insulating material attached to the upper outer circumference of the radiant screen 7 to increase the cooling effect, and A is a heat insulating material attached to the lower outer circumference of the radiant screen 7 to increase the cooling effect, and is made of black smoke felt or The insulation material made of quartz felt and installed at the bottom allows fine adjustment of the insulation effect.
Each layer has a removable laminated structure. In the embodiment, the heat insulating material is attached to the outer periphery within a height range of 250 mm from the lower end of the radiation screen.
第２図は、ルツボ内のＳＬ原料を溶融せしめた状態での
輻射スクリーン７の内壁温度分布を示すグラフであり、
縦軸は融液面からの高さ（ｍｍ）を、横軸は内壁温度（
°Ｃ）を表わしている。輻射スクリーンの内壁温度は、
引上げ単結晶の冷却勾配に大きな影響を与えるものであ
るが、第２図より明らかな如く、ｂ ／ ａが所定寸法
以下の輻射スクリーンでは充分な輻射熱遮断効果を引上
げ単結晶に及ぼし得ないことが解る。これは輻射スクリ
ーンの輻射受熱の放熱作用に基づくものであり、所定寸
法以上の輻射スクリーンであれば、輻射スクリーン面か
らの放熱量により所期の輻射熱遮断効果が発揮されるこ
ととなる。FIG. 2 is a graph showing the inner wall temperature distribution of the radiation screen 7 in a state where the SL raw material in the crucible is melted,
The vertical axis represents the height (mm) from the melt surface, and the horizontal axis represents the inner wall temperature (
°C). The inner wall temperature of the radiant screen is
This has a large effect on the cooling gradient of the pulled single crystal, but as is clear from Figure 2, a radiant screen with b/a of less than a specified size cannot have a sufficient radiant heat shielding effect on the pulled single crystal. I understand. This is based on the heat dissipation effect of the radiant screen receiving radiant heat, and if the radiant screen has a predetermined size or more, the desired radiant heat blocking effect will be exhibited by the amount of heat dissipated from the radiant screen surface.
更に、輻射スクリーンの下部外周部に取付けられた断熱
材は、輻射スクリーンの内壁面に対し、断熱効果を示す
、このような効果は、単に下部外周部に限定されるもの
でなく、断熱材を取付ける位置に対応し、輻射スクリー
ンの全長にわたり発揮されることとなる。そこで本発明
者等は、ｂ／Ｃというパラメータに着目し、引上げ単結
晶の縦方向における温度分布を調べた。その結果を第５
図（６″φ単結晶の場合）、第６図（５パφ単結晶の場
合）に示す。Furthermore, the heat insulating material attached to the lower outer periphery of the radiant screen exhibits a heat insulating effect on the inner wall surface of the radiant screen. Such an effect is not limited to the lower outer periphery; Depending on the position where it is installed, it will be emitted over the entire length of the radiant screen. Therefore, the present inventors focused on the parameter b/C and investigated the temperature distribution in the longitudinal direction of a pulled single crystal. The result is the fifth
(in the case of a 6″φ single crystal) and FIG. 6 (in the case of a 5″φ single crystal).
上記第５図、第６図から明らかな如く、単結晶が６″φ
の場合はｂ／ｃ＝１．７の輻射スクリーンにおいては、
引上げ初期の冷却勾配は確保できるものの、面状格子欠
陥（ＯＳＦ）の発生に大きな要因を持つ、９００℃〜８
００°Ｃの温度域での冷却は充分でなく、面状格子欠陥
の発生防止に必要な保持時間の短縮は図れていない。し
かし、輻射スクリーンをｂ／ｃ≧２．０とすることによ
り、９００℃〜８００℃に至るまでの冷却勾配の確保が
でき、９００ ’Ｃ〜８００℃の保持時間を短くできる
。単結晶が５″φの場合においても、同様にｂ ／ ｃ
≧２．０の輻射スクリーンを用いることにより、９００
℃〜８００°Ｃにおける保持時間の短縮ができることが
解る。As is clear from Figures 5 and 6 above, the single crystal is 6″φ
In the case of the radiation screen with b/c=1.7,
Although a cooling gradient can be maintained at the initial stage of pulling, temperatures between 900°C and 8°C are a major factor in the generation of planar lattice defects (OSFs).
Cooling in the temperature range of 00°C is not sufficient, and it is not possible to shorten the holding time necessary to prevent the occurrence of planar lattice defects. However, by setting the radiation screen to b/c≧2.0, a cooling gradient from 900°C to 800°C can be ensured, and the holding time from 900'C to 800°C can be shortened. Similarly, when the single crystal is 5″φ, b/c
900 by using a radiation screen of ≧2.0
It can be seen that the holding time at temperatures between 800°C and 800°C can be shortened.
したがって、引上げ単結晶の寸法に対し、一定の比率の
遮断長さを有する輻射スクリーンによって面状格子欠陥
（ＯＳＦ）の発生防止に必要な輻射熱遮断効果を得るこ
とができる。Therefore, the radiation heat shielding effect necessary for preventing the occurrence of planar lattice defects (OSF) can be obtained by using a radiation screen having a shielding length that is a certain ratio to the dimensions of the pulled single crystal.
ここで、単結晶の引上げ速度（ｍｍ／ｍ１ｎ）に関して
、第５図及び第６図は引上げ速度１．０ｍｍ／ｍｉｎの
実施例を示すものである。Here, regarding the pulling speed (mm/m1n) of the single crystal, FIGS. 5 and 6 show an example in which the pulling speed is 1.0 mm/min.
前記の如く、輻射スクリーンの輻射熱遮断効果は輻射ス
クリーンの放熱作用に起因するものであり、引上げ単結
晶の寸法に対し、輻射スクリーンを所定寸法以上に維持
するものとすれば、引上げ単結晶の冷却勾配は引上げ速
度に影響されるものでない。As mentioned above, the radiant heat shielding effect of the radiant screen is due to the heat dissipation effect of the radiant screen, and if the radiant screen is maintained at a predetermined size or more with respect to the size of the pulled single crystal, the cooling of the pulled single crystal will be reduced. The slope is not affected by the rate of pull.
なお、これによって得た単結晶の面状格子欠陥発生数（
個／ａｍ’）と輻射スクリーンのｂ ／ ｃとの関係を
第７図に示す。図より明らかなように、６′°φ引上げ
単結晶、若しくは５パφ引上げ単結晶のいずれにおいて
も、ｂ／ｃ≧２．０において面状格子欠陥（ＯＳＦ）の
発生がなくなっている。In addition, the number of planar lattice defects in the single crystal obtained by this method (
Figure 7 shows the relationship between b/c of the radiation screen. As is clear from the figure, there is no occurrence of planar lattice defects (OSF) when b/c≧2.0 in either the 6'°φ pulled single crystal or the 5°φ pulled single crystal.
ところで、各炉において全て同じ冷却勾配を作ることは
難しく、炉の相違による品質のバラツキが生じ易い。し
かし、上記実施例に依れば下部の断熱材Ａが積層構造と
され、且つ層毎に取付は取外し可能であるため、暦数を
調整し、冷却勾配を微調整できる。However, it is difficult to create the same cooling gradient in each furnace, and variations in quality are likely to occur due to differences in furnaces. However, according to the above embodiment, the lower heat insulating material A has a laminated structure, and since each layer can be attached and removed, the calendar number can be adjusted and the cooling gradient can be finely adjusted.
（発明の効果）
以上の如く、本発明においては、所定のｂ ／ ｃの寸
法を備えた輻射スクリーンによって、加熱体、融液及び
ルツボの輻射熱源からの輻射熱を遮蔽し、引上げ単結晶
の冷却勾配を適正に維持し得て、面状格子欠陥（ＯＳＦ
）の発生に大きな影響を及ぼす、９００℃〜８００℃の
温度域における保持時間を短くできることにより、引上
げ単結晶中の面状格子欠陥の発生を無くすことができ、
高品質の単結晶を安定して成長育成できるという優れた
効果を有する。(Effects of the Invention) As described above, in the present invention, the radiant screen with predetermined b/c dimensions blocks the radiant heat from the radiant heat source of the heating body, the melt, and the crucible, and cools the pulled single crystal. Gradient can be maintained properly and planar lattice defects (OSFs) can be maintained properly.
) By shortening the holding time in the temperature range of 900°C to 800°C, which has a large effect on the occurrence of
It has the excellent effect of stably growing and cultivating high-quality single crystals.
第１図は本発明装置の一実施例を示す断面図、第２図は
輻射スクリーン内壁の温度分布を示すグラフ、第３図は
縦方向における結晶中心の温度分布図、第４図は引上げ
単結晶が９００℃〜８００℃である保有時間を説明する
ためのグラフ、第５図は、６゛φ単結晶の９００°Ｃ〜
８００″Ｃの保有時間がｂ ／ ｃに依って変化するこ
とを示すグラフ、第６図は５″φ単結晶の９００℃〜８
００℃の保有時間がｂ ／ ａに依って変化することを
示すグラフ、第７図は５″φ及び６″φ単結晶における
ｂ ／ ｃと面状格子欠陥の発生数との関係を示すグラ
フである。
５・・・引上げ単結晶 ７・・・輻射スクリーンａ・
・・輻射スクリーンの裁頭部の直径ｂ・・・輻射スクリ
ーンの高さ
Ｃ・・・引上げ単結晶の直径
第
図
６００ ７００ ８００ ９００ １０００１１００１
２００内壁巳呈膚（’Ｃ）
００
６００ ８００
０００
１２０゜
４００
結晶中心部の温度（°Ｃ）Fig. 1 is a sectional view showing an embodiment of the device of the present invention, Fig. 2 is a graph showing the temperature distribution on the inner wall of the radiation screen, Fig. 3 is a temperature distribution chart at the center of the crystal in the vertical direction, and Fig. 4 is a drawing graph showing the temperature distribution on the inner wall of the radiation screen. A graph for explaining the retention time of a crystal at 900°C to 800°C, Figure 5 shows the retention time of a 6゛φ single crystal at 900°C to 800°C.
A graph showing that the retention time at 800"C varies depending on b/c, Figure 6 shows the retention time of 5"φ single crystal from 900℃ to 8
A graph showing that the retention time at 00°C changes depending on b/a. Figure 7 is a graph showing the relationship between b/c and the number of planar lattice defects in 5"φ and 6"φ single crystals. It is. 5... Pulled single crystal 7... Radiation screen a.
... Diameter of the truncated part of the radiation screen b ... Height of the radiation screen C ... Diameter of the pulled single crystal Fig. 600 700 800 900 100011001
200 Inner wall skin ('C) 00 600 800 000 120°400 Temperature at the center of the crystal (°C)
Claims (2)
錐形の輻射スクリーンを具備した単結晶引上げ装置であ
って、前記輻射スクリーンの裁頭部の直径をａ、同輻射
スクリーンの高さをｂ、引上げ単結晶の直径をｃとした
ときに、ａ／ｃ＝１．１〜２．０であり、且つｂ／ｃ≧
２．０であることを特徴とする単結晶引上げ装置。(1) A single crystal pulling apparatus equipped with an inverted truncated cone-shaped radiation screen positioned around the pulled single crystal, wherein the diameter of the truncated part of the radiation screen is a, and the height of the radiation screen is b, when the diameter of the pulled single crystal is c, a/c = 1.1 to 2.0, and b/c≧
2.0.
錐形の輻射スクリーンであって、当該輻射スクリーンの
外周部を積層構造としたことを特徴とする第１項記載の
単結晶引上げ装置。(2) The single crystal pulling apparatus according to item 1, characterized in that the radiation screen has an inverted truncated conical shape and is placed around the pulled single crystal, and the outer peripheral portion of the radiation screen has a laminated structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1293705A JP2709310B2 (en) | 1989-11-11 | 1989-11-11 | Single crystal pulling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1293705A JP2709310B2 (en) | 1989-11-11 | 1989-11-11 | Single crystal pulling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03153595A true JPH03153595A (en) | 1991-07-01 |
| JP2709310B2 JP2709310B2 (en) | 1998-02-04 |
Family
ID=17798170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1293705A Expired - Lifetime JP2709310B2 (en) | 1989-11-11 | 1989-11-11 | Single crystal pulling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2709310B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997021853A1 (en) * | 1995-12-08 | 1997-06-19 | Shin-Etsu Handotai Co., Ltd. | Single crystal production apparatus and process |
| EP0811707A1 (en) * | 1996-06-05 | 1997-12-10 | Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft | Process and apparatus for making single crystals |
| EP0781866A3 (en) * | 1995-12-27 | 1998-08-12 | Shin-Etsu Handotai Company Limited | An apparatus and a method for growing a single crystal |
| WO2000050671A1 (en) * | 1999-02-26 | 2000-08-31 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal puller |
| US6251184B1 (en) | 1997-02-13 | 2001-06-26 | Samsung Electronics Co., Ltd. | Insulating-containing ring-shaped heat shields for czochralski pullers |
| US6340392B1 (en) | 1997-10-24 | 2002-01-22 | Samsung Electronics Co., Ltd. | Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface |
| US6482263B1 (en) | 2000-10-06 | 2002-11-19 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal pulling apparatus |
| US6485807B1 (en) | 1997-02-13 | 2002-11-26 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects, and methods of preparing the same |
| US6503594B2 (en) | 1997-02-13 | 2003-01-07 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects and slip |
| US6797062B2 (en) | 2002-09-20 | 2004-09-28 | Memc Electronic Materials, Inc. | Heat shield assembly for a crystal puller |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5645894A (en) * | 1979-09-25 | 1981-04-25 | Nippon Telegr & Teleph Corp <Ntt> | Reducing method for defect of silicon single crystal |
| JPS5750759A (en) * | 1980-09-10 | 1982-03-25 | Hitachi Ltd | Charged particle irradiator |
| JPS62138386A (en) * | 1985-12-11 | 1987-06-22 | Shin Etsu Handotai Co Ltd | Device for pulling single crystal |
| JPS63315589A (en) * | 1987-06-16 | 1988-12-23 | Osaka Titanium Seizo Kk | Single crystal production apparatus |
| JPS6472984A (en) * | 1987-09-11 | 1989-03-17 | Shinetsu Handotai Kk | Apparatus for producing single crystal |
-
1989
- 1989-11-11 JP JP1293705A patent/JP2709310B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5645894A (en) * | 1979-09-25 | 1981-04-25 | Nippon Telegr & Teleph Corp <Ntt> | Reducing method for defect of silicon single crystal |
| JPS5750759A (en) * | 1980-09-10 | 1982-03-25 | Hitachi Ltd | Charged particle irradiator |
| JPS62138386A (en) * | 1985-12-11 | 1987-06-22 | Shin Etsu Handotai Co Ltd | Device for pulling single crystal |
| JPS63315589A (en) * | 1987-06-16 | 1988-12-23 | Osaka Titanium Seizo Kk | Single crystal production apparatus |
| JPS6472984A (en) * | 1987-09-11 | 1989-03-17 | Shinetsu Handotai Kk | Apparatus for producing single crystal |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997021853A1 (en) * | 1995-12-08 | 1997-06-19 | Shin-Etsu Handotai Co., Ltd. | Single crystal production apparatus and process |
| US5972106A (en) * | 1995-12-08 | 1999-10-26 | Shin-Etsu Handotai Co., Ltd. | Device and method for producing single crystal |
| EP0781866A3 (en) * | 1995-12-27 | 1998-08-12 | Shin-Etsu Handotai Company Limited | An apparatus and a method for growing a single crystal |
| EP0811707A1 (en) * | 1996-06-05 | 1997-12-10 | Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft | Process and apparatus for making single crystals |
| US6503594B2 (en) | 1997-02-13 | 2003-01-07 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects and slip |
| US6251184B1 (en) | 1997-02-13 | 2001-06-26 | Samsung Electronics Co., Ltd. | Insulating-containing ring-shaped heat shields for czochralski pullers |
| US6409833B2 (en) | 1997-02-13 | 2002-06-25 | Samsung Electronics Co., Ltd. | Insulating-containing ring-shaped heat shields and support members for Czochralski pullers |
| US6472040B1 (en) | 1997-02-13 | 2002-10-29 | Samsung Electronics Co., Ltd. | Semi-pure and pure monocrystalline silicon ingots and wafers |
| US6485807B1 (en) | 1997-02-13 | 2002-11-26 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects, and methods of preparing the same |
| US6676753B2 (en) | 1997-02-13 | 2004-01-13 | Samsung Electronics Co., Ltd. | Czochralski pullers for manufacturing monocrystalline silicon ingots, including heat shield having sloped portions |
| US6780238B2 (en) | 1997-02-13 | 2004-08-24 | Samsung Electronics Co., Ltd. | Argon/ammonia rapid thermal annealing for silicon wafers |
| US6340392B1 (en) | 1997-10-24 | 2002-01-22 | Samsung Electronics Co., Ltd. | Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface |
| US6197111B1 (en) | 1999-02-26 | 2001-03-06 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal puller |
| WO2000050671A1 (en) * | 1999-02-26 | 2000-08-31 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal puller |
| US6482263B1 (en) | 2000-10-06 | 2002-11-19 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal pulling apparatus |
| US6797062B2 (en) | 2002-09-20 | 2004-09-28 | Memc Electronic Materials, Inc. | Heat shield assembly for a crystal puller |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2709310B2 (en) | 1998-02-04 |
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