CH414552A - Process for crucible-free zone melting of bars - Google Patents

Process for crucible-free zone melting of bars

Info

Publication number
CH414552A
CH414552A CH1366563A CH1366563A CH414552A CH 414552 A CH414552 A CH 414552A CH 1366563 A CH1366563 A CH 1366563A CH 1366563 A CH1366563 A CH 1366563A CH 414552 A CH414552 A CH 414552A
Authority
CH
Switzerland
Prior art keywords
crucible
bars
free zone
zone melting
melting
Prior art date
Application number
CH1366563A
Other languages
German (de)
Inventor
Rummel Theodor Dr Prof
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH414552A publication Critical patent/CH414552A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH1366563A 1962-12-07 1963-11-07 Process for crucible-free zone melting of bars CH414552A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0082750 1962-12-07

Publications (1)

Publication Number Publication Date
CH414552A true CH414552A (en) 1966-06-15

Family

ID=7510570

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1366563A CH414552A (en) 1962-12-07 1963-11-07 Process for crucible-free zone melting of bars

Country Status (4)

Country Link
CH (1) CH414552A (en)
DE (1) DE1248614B (en)
GB (1) GB1008299A (en)
NL (1) NL299517A (en)

Also Published As

Publication number Publication date
NL299517A (en)
GB1008299A (en) 1965-10-27
DE1248614B (en) 1967-08-31

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