US3342970A - Apparatus for crucible-free zone melting - Google Patents

Apparatus for crucible-free zone melting Download PDF

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US3342970A
US3342970A US430361A US43036165A US3342970A US 3342970 A US3342970 A US 3342970A US 430361 A US430361 A US 430361A US 43036165 A US43036165 A US 43036165A US 3342970 A US3342970 A US 3342970A
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rod
concentrator
coil
melting
crucible
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Emeis Reimer
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Siemens Schuckertwerke AG
Siemens AG
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Definitions

  • Apparatus for crucible-free zone melting of a crystalline rod includes an induction heating coil for forming a melting zone in the rod.
  • the coil surrounds and is spaced from the rod and is energizable to produce an inductive heating field around the rod.
  • the coil and rod are relatively movable in the direction of the rod axis so as to pass the melting zone along the rod.
  • the rod extends through an opening of a concentrator device which is located in the field between the heating coil and the melting zone and comprises a plurality of parts movable relative to each other within the field for varying the size of the opening so as to accommodate rods of respectively varying cross section therein.
  • the concentrator device can be a subdivided ring with a silver surface, the subdivision of the ring being radially movable, or can comprise a pair of silvered metal strips aligned end to end and formed 3,,34Z,9 70 Patented Sept. '19, 1967 ticularly of semiconductor material, having two holders gripping the ends of the body and an induction coil surrounding and spaced from the rod for producing the melting zone in the rod, the induction coil being movable relative to the longitudinal axis of the rod.
  • a concentrator device surrounding the rod is arranged in the field between the heating coil and the melting zone.
  • the concentrator is divided into a plurality of parts adjustable with respect to each other so as to vary the area encompassed thereby.
  • My invention relates to apparatus for crucible-free zone melting of a rod-shaped member of crystalline material.
  • Such apparatus is known in diiferent embodiments.
  • a crystalline rod that is to be processed is located in an evacuated vessel or in a vessel filled with protective gas.
  • the rod consists, for example, of a semiconductor material such as germanium orsilicon, or a metal, such as tungsten or molybdenum.
  • the ends of the rod are gripped by holders and the rod is usually located in a vertical position.
  • a heating device heats the rod along a narrow length thereof and thus forms a melting zone. This melting zone is passed along the length of the rod through relative movement of the heating device and the rod with respect to the longitudinal axis of the rod.
  • an induction heating coil which surrounds and is spaced from the rod, serves as a heating device for the production of the melting zone.
  • the heating coil can be energized with a current having a frequency of 1-5 MHz.
  • the semiconductor body can thus be melted by inductive heating produced by the coil.
  • the heating coil must surround the semiconductor rod relatively closely, in order to provide good coupling. This, of course, limits the growth diameter of the rod.
  • a further object of the invention is to provide a device which would aid also in producing crystalline rods whose cross-sectional dimensions vary along the rod length.
  • FIG. 1 is an elevational view of an embodiment of my invention showing a concentrator and induction heating coil in position around the molten zone of a crystalline rod.
  • FIG. 2 is a top plan view of FIG. 1 with the induction heating coil removed.
  • FIGS. 3 and 4 areplan and elevational views, respectively, of an additional embodiment of a concentrator constructed in accordance with my invention.
  • a melting zone 4 produced in a rod-shaped body 2, which may, for example, have a circular cross section.
  • the melting zone 4 is produced by heating with an induction heating coil 3, which may be in the form of a fiat, helically wound coil.
  • the field of the heat-' ing coil 3 is concentrated by a concentrator device consisting of the parts 5a, 5b, 5c and 5d (FIG. 2).
  • Concentrators per se are known from the inductive heating arts. They constitute divided or split rings of electrically conductive material which are located in the field of an induction coil.
  • a closed ring does not constitute a concentrator, because, with a closed ring, a field opposite to the field of the heating coil is produced, and the heating effect is completely nullified.
  • a concentrator is used for crucible-free zone melting
  • it can consist, preferably, of silver or of a copper component provided with a silver coating and connected preferably to a cooling loop, for example a water cooling system.
  • the German published patent application No. 1,094,710 discloses a method by means of which monocrystals are produced byseed crystals 'having a diameter considerably smaller than that of the semiconductor rod being processed.
  • FIG. 1 shows such a crystal seed 6.
  • the narrow crystal seed may have a diameter of approximately 3 to 5 mm.
  • the semiconductor rod 2 may have a diameter of 12 to 40 mm.
  • FIG. 2 indicates by the double-headed arrows the directions of motion of the parts 5a-5d of the concentrator 5,
  • the device of my invention is also especially employable in cases where a desired change in the cross section of the rod, i.e. an enlargement or reduction, is tobe effected by means of the crucible-free zone melting process.
  • FIGS. 1 and 2 illustrate a concentrator which has a circular ring-shaped cross section and which is subdivided into four parts. It is, of course, understood that the concentrator may also be divided into two or three or more than four parts.
  • the shape of the opening in the concentrator may also conform to the cross sectional shape of the rod being treated which can be square or rectangular, for example.
  • FIGS. 3 and 4 show another embodiment of a concentrator according to the invention pnd consisting of two strips 11 and 12, aligned end to end and formed with V- shaped notches at the mutually adjacent ends.
  • the strips 11, 12 are movable in the directions of the two-headed arrows.
  • the concentrator can be made tolie completely inside the winding of the heating coil and be movable only from the outside of the heating coil. It is also possible to provide a concentrator above or below or both above and below the heating coil.
  • the device of my invention it is advisable to have all parts of the device of my invention enclosed by a relatively large vessel, which serves for maintaining the necessary vacuum, or the protective gas atmosphere, respectively as shown with related equipment, for example, in my Patent No. 2,972,525.
  • the concentrator may also be placed in a relatively narrow vessel, for example a quartz tube, while the heating coil in located outside of the vessel, for example surrounding the quartz tube.
  • Relative motion between the heating coil and the treated rod may be effected by movement of the heating coil while the rod is tightly gripped inside the vessel, or by moving the rod while the heating coil is held fixed.
  • Movement of the parts 5a-5c can be effected by suitably manipulating the holder rods 7 secured thereto.
  • Movement of the strips 11, 12 can be effected by suitably manipulating the distant ends thereof.
  • an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator device having an opening through which the rod extends, said concentrator device being located in the field between the heating coil and the melting zone and comprising a plurality of parts movable relative to each other within said field for varying the size of said opening so as to accommodate rods of respectively varying cross section therein.
  • an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator device having an opening through which the rod extends, said concentrator device being locate-d below the heating coil in the field between the heating coil and the melting Zone and comprising a plurality of parts movable relative to each other within said field for varying the size of said opening so as to accommodate rods of respectively varying cross section therein.
  • an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator having an opening through which the rod extends, said concentrator being located in the field between the heating coil and the melting zone and comprising a subdivided ring having a silver surface, the subdivisions of said ring being radially movable for varying the inner diameter of said ring whereby rods of varying cross-sectional area or shape can be accommodated by said concentrator.
  • an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator comprising a pair of metal strips aligned end to end each formed with a V-shaped notch at mutually adjacent ends thereof defining an aperture through which the rod extends, said concentrator being located in the field between the heating coil and the melting zone, and the metal strips of said concentrator having a silver surface and being movable toward and away from each other for varying the size of said aperture whereby rods of varying cross-sectional area or shape can be accommodated by said concentrator.

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)

Description

Sept. 19, 1967 R. EMEIS 3,342,970
APPARATUS FOR CRUCIBLE-FREE ZONE MELTING Filed Feb. 4, 1965 a 1. Fig? Fig. 1
United. States Patent Germany Filed Feb. 4, 1965, Ser. No. 430,361 Claims priority, appligatigrzGermany, Feb. 8, 1964,
6 Claims. (31. 219-1043 ABSTRACT OF THE DISCLOSURE Apparatus for crucible-free zone melting of a crystalline rod includes an induction heating coil for forming a melting zone in the rod. The coil surrounds and is spaced from the rod and is energizable to produce an inductive heating field around the rod. The coil and rod are relatively movable in the direction of the rod axis so as to pass the melting zone along the rod. The rod extends through an opening of a concentrator device which is located in the field between the heating coil and the melting zone and comprises a plurality of parts movable relative to each other within the field for varying the size of the opening so as to accommodate rods of respectively varying cross section therein. The concentrator device can be a subdivided ring with a silver surface, the subdivision of the ring being radially movable, or can comprise a pair of silvered metal strips aligned end to end and formed 3,,34Z,9 70 Patented Sept. '19, 1967 ticularly of semiconductor material, having two holders gripping the ends of the body and an induction coil surrounding and spaced from the rod for producing the melting zone in the rod, the induction coil being movable relative to the longitudinal axis of the rod. A concentrator device surrounding the rod is arranged in the field between the heating coil and the melting zone. The concentrator is divided into a plurality of parts adjustable with respect to each other so as to vary the area encompassed thereby.
Other features which are considered as characteristic for the invention are set forth in the appended claims.
Although the invention is illustrated and described herein as embodied in a device for crucible-free zone melting, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following with a V-shaped notch at mutually adjacent ends thereof defining an aperture through which the rod extends.
My invention relates to apparatus for crucible-free zone melting of a rod-shaped member of crystalline material. Such apparatus is known in diiferent embodiments. Usually, a crystalline rod that is to be processed is located in an evacuated vessel or in a vessel filled with protective gas. The rod consists, for example, of a semiconductor material such as germanium orsilicon, or a metal, such as tungsten or molybdenum. The ends of the rod are gripped by holders and the rod is usually located in a vertical position. A heating device heats the rod along a narrow length thereof and thus forms a melting zone. This melting zone is passed along the length of the rod through relative movement of the heating device and the rod with respect to the longitudinal axis of the rod.
In heretofore known apparatus, an induction heating coil which surrounds and is spaced from the rod, serves as a heating device for the production of the melting zone. Thus, in the case of silicon, for example, the heating coil can be energized with a current having a frequency of 1-5 MHz. The semiconductor body can thus be melted by inductive heating produced by the coil. As a rule, the heating coil must surround the semiconductor rod relatively closely, in order to provide good coupling. This, of course, limits the growth diameter of the rod.
It is accordingly an object of my invention to provide a device for crucible-free zone melting which avoids the coupling difficulties encountered heretofore.
It is an additional object of my invention to provide apparatus for crucible-free zone melting which will make it possible to process crystalline rods of various cross sections and with various cross-sectional dimensions, without having to change the heating coil.
A further object of the invention is to provide a device which would aid also in producing crystalline rods whose cross-sectional dimensions vary along the rod length.
With the foregoing objects in view, I provide apparatus for crucible-free zone melting of a crystalline rod, pardescription of specific embodiments when read in connec tion with the accompanying drawings, in which:
FIG. 1 is an elevational view of an embodiment of my invention showing a concentrator and induction heating coil in position around the molten zone of a crystalline rod.
FIG. 2 is a top plan view of FIG. 1 with the induction heating coil removed.
FIGS. 3 and 4 areplan and elevational views, respectively, of an additional embodiment of a concentrator constructed in accordance with my invention.
Referring now to the drawings, and first, particularly, to FIG. 1, there is shown a melting zone 4 produced in a rod-shaped body 2, which may, for example, have a circular cross section. The melting zone 4 is produced by heating with an induction heating coil 3, which may be in the form of a fiat, helically wound coil. The field of the heat-' ing coil 3 is concentrated by a concentrator device consisting of the parts 5a, 5b, 5c and 5d (FIG. 2). Concentrators per se are known from the inductive heating arts. They constitute divided or split rings of electrically conductive material which are located in the field of an induction coil. Due to the division of the concentrator, only such eddy currents are produced respectively within the individual parts as would ultimately concentrate the field in the area of the opening inside the concentrator. A closed ring, on the other hand, does not constitute a concentrator, because, with a closed ring, a field opposite to the field of the heating coil is produced, and the heating effect is completely nullified.
In the case at hand, where a concentrator is used for crucible-free zone melting, it can consist, preferably, of silver or of a copper component provided with a silver coating and connected preferably to a cooling loop, for example a water cooling system.
The German published patent application No. 1,094,710 discloses a method by means of which monocrystals are produced byseed crystals 'having a diameter considerably smaller than that of the semiconductor rod being processed. FIG. 1 shows such a crystal seed 6. With the device of my invention, no difficulties whatsoever are encountered in the processing of such a semiconductor rod since, by adjusting the concentrator, a type of concentration of the electromagnetic field may be obtained which makes the coupling of the heating coil 3 equally satisfactory in all positions. Thus, for example, the narrow crystal seed may have a diameter of approximately 3 to 5 mm., while the semiconductor rod 2 may have a diameter of 12 to 40 mm.
FIG. 2 indicates by the double-headed arrows the directions of motion of the parts 5a-5d of the concentrator 5,
which permit adjustment of the concentrator to the varying cross sections of the rod-shaped body to be processed. The device of my invention is also especially employable in cases where a desired change in the cross section of the rod, i.e. an enlargement or reduction, is tobe effected by means of the crucible-free zone melting process.
FIGS. 1 and 2 illustrate a concentrator which has a circular ring-shaped cross section and which is subdivided into four parts. It is, of course, understood that the concentrator may also be divided into two or three or more than four parts. The shape of the opening in the concentrator may also conform to the cross sectional shape of the rod being treated which can be square or rectangular, for example.
FIGS. 3 and 4 show another embodiment of a concentrator according to the invention pnd consisting of two strips 11 and 12, aligned end to end and formed with V- shaped notches at the mutually adjacent ends. The strips 11, 12 are movable in the directions of the two-headed arrows.
If necessary, the concentrator can be made tolie completely inside the winding of the heating coil and be movable only from the outside of the heating coil. It is also possible to provide a concentrator above or below or both above and below the heating coil.
It is advisable to have all parts of the device of my invention enclosed by a relatively large vessel, which serves for maintaining the necessary vacuum, or the protective gas atmosphere, respectively as shown with related equipment, for example, in my Patent No. 2,972,525. The concentrator may also be placed in a relatively narrow vessel, for example a quartz tube, while the heating coil in located outside of the vessel, for example surrounding the quartz tube.
Relative motion between the heating coil and the treated rod may be effected by movement of the heating coil while the rod is tightly gripped inside the vessel, or by moving the rod while the heating coil is held fixed.
In the device of my invention, movement of the rod holder while the heating coil and the adjustment concentrator are fixedly mounted, appears to be more advantageous.
Movement of the parts 5a-5c (FIGS. 1 and 2) can be effected by suitably manipulating the holder rods 7 secured thereto.
Movement of the strips 11, 12 (FIGS. 3 and 4) can be effected by suitably manipulating the distant ends thereof.
I claim:
1. In apparatus for crucible-free zone melting of a crystalline 'rod, an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator device having an opening through which the rod extends, said concentrator device being located in the field between the heating coil and the melting zone and comprising a plurality of parts movable relative to each other within said field for varying the size of said opening so as to accommodate rods of respectively varying cross section therein.
2. In apparatus for crucible-free zone melting of a crystalline rod, an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator device having an opening through which the rod extends, said concentrator device being locate-d below the heating coil in the field between the heating coil and the melting Zone and comprising a plurality of parts movable relative to each other within said field for varying the size of said opening so as to accommodate rods of respectively varying cross section therein.
3. Apparatus according to claim 1 wherein said plurality of parts is greater than two.
4. In apparatus for crucible-free zone melting of a crystalline rod, an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator having an opening through which the rod extends, said concentrator being located in the field between the heating coil and the melting zone and comprising a subdivided ring having a silver surface, the subdivisions of said ring being radially movable for varying the inner diameter of said ring whereby rods of varying cross-sectional area or shape can be accommodated by said concentrator.
5. In apparatus for crucible-free zone melting of a crystalline rod, an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator comprising a pair of metal strips aligned end to end each formed with a V-shaped notch at mutually adjacent ends thereof defining an aperture through which the rod extends, said concentrator being located in the field between the heating coil and the melting zone, and the metal strips of said concentrator having a silver surface and being movable toward and away from each other for varying the size of said aperture whereby rods of varying cross-sectional area or shape can be accommodated by said concentrator.
6. Apparatus according to claim 1 wherein said concentrator device is fixed with respect to said coil and relatively movable with respect to said rod in the direction of the rod axis.
References Cited UNITED STATES PATENTS 2,537,289 1/1951 Van Embden 219l0.79 X
3,100,250 8/1963 Herczog et a1. 219l0.79 X
3,232,716 2/1966 Quast et a1. 21910.97 X
FOREIGN PATENTS 1,358,425 3/ 1964 France.
RICHARD M. WOOD, Primary Examiner.
L. H. BENDER, Assistant Examiner.

Claims (1)

1. IN APPARATUS FOR CRUCIBLE-FREE ZONE MELTING OF A CRYSTALLINE ROD, AN INDUCTION HEATING COIL FOR FORMING A MELTING ZONE IN THE ROD, SAID COIL SURROUNDING AND SPACED FROM THE ROD AND BEING ENERGIZABLE TO PRODUCE AN INDUCTIVE HEATING FIELD AROUND THE ROD, SAID COIL AND ROD BEING RELATIVELY MOVABLE IN THE DIRECTION OF THE ROD AXIS SO AS TO MOVE THE MELTING ZONE ALONG THE ROD, AND A CONCENTRATOR DEVICE HAVING AN OPENING THROUGH WHICH THE ROD EXTENDS,
US430361A 1964-02-08 1965-02-04 Apparatus for crucible-free zone melting Expired - Lifetime US3342970A (en)

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BE (1) BE659252A (en)
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DE (1) DE1260439B (en)
FR (1) FR1445481A (en)
GB (1) GB1022427A (en)
SE (1) SE302116B (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660062A (en) * 1968-02-29 1972-05-02 Siemens Ag Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material
US3935059A (en) * 1969-07-21 1976-01-27 U.S. Philips Corporation Method of producing single crystals of semiconductor material by floating-zone melting
US4109128A (en) * 1975-09-01 1978-08-22 Wacker-Chemitronik Gesellschaft Fur Elektronik-Grundstoffe Mbh Method for the production of semiconductor rods of large diameter and device for making the same
US4184135A (en) * 1978-04-10 1980-01-15 Monsanto Company Breakapart single turn RF induction apparatus
DE3143146A1 (en) * 1981-10-30 1983-05-11 Siemens AG, 1000 Berlin und 8000 München INDUCTION HEATING COIL DESIGNED AS A FLAT COIL FOR POT-FREE ZONE MELTING
DE3226713A1 (en) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München INDUCTION HEATING COIL DESIGNED AS A FLAT COIL FOR POT-FREE ZONE MELTING
DE3229461A1 (en) * 1982-08-06 1984-02-09 Siemens AG, 1000 Berlin und 8000 München DEVICE FOR POT-FREE ZONE MELTING OF A SEMICONDUCTOR STICK, PARTICULARLY MADE OF SILICON
US4458127A (en) * 1981-05-26 1984-07-03 Park-Ohio Industries, Inc. Inductor for annealing work hardened portions of structural beams
US4549051A (en) * 1984-02-15 1985-10-22 Ness Richard A Induction heating device for nozzles of containers
US5009860A (en) * 1987-05-25 1991-04-23 Shin-Etsu Handotai Co., Ltd. Semiconductor rod zone melting apparatus
US5089082A (en) * 1989-11-24 1992-02-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process and apparatus for producing silicon ingots having high oxygen content by crucible-free zone pulling, silicon ingots obtainable thereby and silicon wafers produced therefrom
US20110073591A1 (en) * 2008-07-17 2011-03-31 Seiichi Sawatsubashi Guide Chip Structure for High-Frequency Induction Heating Coil

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2537289A (en) * 1944-04-26 1951-01-09 Hartford Nat Bank & Trust Co Device for heating pieces of work by means of high-frequency alternating currents
US3100250A (en) * 1961-04-07 1963-08-06 Herczog Andrew Zone melting apparatus
FR1358425A (en) * 1963-01-22 1964-04-17 Traitements Electrolytiques & High Frequency Plasma Torch Improvement
US3232716A (en) * 1959-12-23 1966-02-01 Siemens Halske Ag Device for pulling monocrystalline semiconductor rods

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE532054A (en) * 1953-09-25 1900-01-01

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2537289A (en) * 1944-04-26 1951-01-09 Hartford Nat Bank & Trust Co Device for heating pieces of work by means of high-frequency alternating currents
US3232716A (en) * 1959-12-23 1966-02-01 Siemens Halske Ag Device for pulling monocrystalline semiconductor rods
US3100250A (en) * 1961-04-07 1963-08-06 Herczog Andrew Zone melting apparatus
FR1358425A (en) * 1963-01-22 1964-04-17 Traitements Electrolytiques & High Frequency Plasma Torch Improvement

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660062A (en) * 1968-02-29 1972-05-02 Siemens Ag Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material
US3935059A (en) * 1969-07-21 1976-01-27 U.S. Philips Corporation Method of producing single crystals of semiconductor material by floating-zone melting
US4109128A (en) * 1975-09-01 1978-08-22 Wacker-Chemitronik Gesellschaft Fur Elektronik-Grundstoffe Mbh Method for the production of semiconductor rods of large diameter and device for making the same
US4184135A (en) * 1978-04-10 1980-01-15 Monsanto Company Breakapart single turn RF induction apparatus
US4458127A (en) * 1981-05-26 1984-07-03 Park-Ohio Industries, Inc. Inductor for annealing work hardened portions of structural beams
DE3143146A1 (en) * 1981-10-30 1983-05-11 Siemens AG, 1000 Berlin und 8000 München INDUCTION HEATING COIL DESIGNED AS A FLAT COIL FOR POT-FREE ZONE MELTING
DE3226713A1 (en) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München INDUCTION HEATING COIL DESIGNED AS A FLAT COIL FOR POT-FREE ZONE MELTING
DE3229461A1 (en) * 1982-08-06 1984-02-09 Siemens AG, 1000 Berlin und 8000 München DEVICE FOR POT-FREE ZONE MELTING OF A SEMICONDUCTOR STICK, PARTICULARLY MADE OF SILICON
US4549051A (en) * 1984-02-15 1985-10-22 Ness Richard A Induction heating device for nozzles of containers
US5009860A (en) * 1987-05-25 1991-04-23 Shin-Etsu Handotai Co., Ltd. Semiconductor rod zone melting apparatus
US5089082A (en) * 1989-11-24 1992-02-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process and apparatus for producing silicon ingots having high oxygen content by crucible-free zone pulling, silicon ingots obtainable thereby and silicon wafers produced therefrom
US20110073591A1 (en) * 2008-07-17 2011-03-31 Seiichi Sawatsubashi Guide Chip Structure for High-Frequency Induction Heating Coil

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BE659252A (en) 1965-08-04
FR1445481A (en) 1966-07-15
SE302116B (en) 1968-07-08
DE1260439B (en) 1968-02-08
CH414553A (en) 1966-06-15
GB1022427A (en) 1966-03-16

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