GB1312884A - Zone refining process - Google Patents

Zone refining process

Info

Publication number
GB1312884A
GB1312884A GB3789071A GB3789071A GB1312884A GB 1312884 A GB1312884 A GB 1312884A GB 3789071 A GB3789071 A GB 3789071A GB 3789071 A GB3789071 A GB 3789071A GB 1312884 A GB1312884 A GB 1312884A
Authority
GB
United Kingdom
Prior art keywords
zone refining
zone
monocrystalline
rod
refining process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3789071A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Publication of GB1312884A publication Critical patent/GB1312884A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1312884 Zone-melting MONSANTO CO 12 Aug 1971 [13 Aug 1970] 37890/71 Heading B1S In a process comprising converting a polycrystalline rod of silicon to monocrystalline by seeding and zone refining, or comprising the zone refining of a monocrystalline rod of silicon, the process is carried out in an atmosphere of between 0.1% and 5% hydrogen and between 99.9% and 95% inert gas. The inert gas may be argon, krypton or helium and is passed, mixed with the hydrogen continuously through the chamber in which the zone refining is being carried out. This mixture of gases is said to remove "swirls" from the monocrystalline rod, and melting is, in the described embodiment, by electric induction.
GB3789071A 1970-08-13 1971-08-12 Zone refining process Expired GB1312884A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6338170A 1970-08-13 1970-08-13

Publications (1)

Publication Number Publication Date
GB1312884A true GB1312884A (en) 1973-04-11

Family

ID=22048823

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3789071A Expired GB1312884A (en) 1970-08-13 1971-08-12 Zone refining process

Country Status (6)

Country Link
US (1) US3734695A (en)
JP (1) JPS5543433B1 (en)
BE (1) BE771238A (en)
DE (1) DE2140510A1 (en)
GB (1) GB1312884A (en)
NL (1) NL7111057A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2356376A1 (en) * 1973-11-12 1975-05-15 Siemens Ag PROCESS FOR PRODUCING HOMOGENOUS DOPED SILICON CRYSTALS WITH N-CONDUCTIVITY BY NEUTRON RADIATION
DE4105910A1 (en) * 1991-02-26 1992-08-27 Bayer Ag METHOD FOR PRODUCING METAL FILMS AND THE USE THEREOF

Also Published As

Publication number Publication date
NL7111057A (en) 1972-02-15
DE2140510A1 (en) 1972-02-17
JPS5543433B1 (en) 1980-11-06
US3734695A (en) 1973-05-22
BE771238A (en) 1972-02-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee