JPS5688899A - Growth of artificial rock crystal - Google Patents

Growth of artificial rock crystal

Info

Publication number
JPS5688899A
JPS5688899A JP16713379A JP16713379A JPS5688899A JP S5688899 A JPS5688899 A JP S5688899A JP 16713379 A JP16713379 A JP 16713379A JP 16713379 A JP16713379 A JP 16713379A JP S5688899 A JPS5688899 A JP S5688899A
Authority
JP
Japan
Prior art keywords
crystal
rock crystal
growing
seed crystal
rock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16713379A
Other languages
Japanese (ja)
Inventor
Shogo Maeda
Norihiro Sano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP16713379A priority Critical patent/JPS5688899A/en
Publication of JPS5688899A publication Critical patent/JPS5688899A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: In growing an artificial rock crystal by synthetic hydrothermal reaction, to improve more extremely a yield for preparing a seed crystal than in a conventional method, by growing the rock crystal using an alkali solution which contains a rock crystal previously.
CONSTITUTION: In growing an artificial rock crystal by packing an autoclave with an alkali solution, feeding a rock crystal of a raw material to the dissolving part at its bottom, and hanging a seed crystal in a growing part at its top, an alkali solution in which a rock crystal is previously dissolved to a saturation state is used, so that the dissolution of the seed crystal is hardly progressed, and a thin seed crystal can be used. About one-third of a conventional thickness is usable, and the yield for preparing the seed crystal can be extremely improved.
COPYRIGHT: (C)1981,JPO&Japio
JP16713379A 1979-12-21 1979-12-21 Growth of artificial rock crystal Pending JPS5688899A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16713379A JPS5688899A (en) 1979-12-21 1979-12-21 Growth of artificial rock crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16713379A JPS5688899A (en) 1979-12-21 1979-12-21 Growth of artificial rock crystal

Publications (1)

Publication Number Publication Date
JPS5688899A true JPS5688899A (en) 1981-07-18

Family

ID=15844034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16713379A Pending JPS5688899A (en) 1979-12-21 1979-12-21 Growth of artificial rock crystal

Country Status (1)

Country Link
JP (1) JPS5688899A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006069838A (en) * 2004-09-01 2006-03-16 Kyocera Kinseki Corp Method of manufacturing artificial quartz crystal
CN109137074A (en) * 2018-10-23 2019-01-04 梁维嘉 The artificial culture growing method of quartzy embryo

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006069838A (en) * 2004-09-01 2006-03-16 Kyocera Kinseki Corp Method of manufacturing artificial quartz crystal
CN109137074A (en) * 2018-10-23 2019-01-04 梁维嘉 The artificial culture growing method of quartzy embryo

Similar Documents

Publication Publication Date Title
JPS5792591A (en) Production of single crystal
JPS5688899A (en) Growth of artificial rock crystal
JPS52125686A (en) Process for growing yeast in high yield
JPS5435899A (en) Production of rare earth element gallium garnet single crystal
JPS5551795A (en) Artificial rock crystal and growing method therefor
JPS52138095A (en) Growth of sapphire single crystal
JPS5413477A (en) Continuous growing apparatus for single crystal
JPS549171A (en) Single crystal pulling method
JPS5252870A (en) Continuous crystallization apparatus
JPS5722199A (en) Method for growing single crystal
JPS53139970A (en) Liquid phase epitaxial growth method of gaas crystal
JPS549173A (en) Method of producing single crystal
JPS5571698A (en) Production of gadolinium gallium garnet single crystal
JPS5387985A (en) Gaseous phase epitaxial growth method for compound semiconductor crystal
JPS54128990A (en) Growing method for single crystal of gallium phosphide
JPS52155189A (en) Multiple layer crystal growth
JPS5663899A (en) Growing method of artificial rock crystal
JPS5250164A (en) Process for production of semiconductor single crystal
JPS51148087A (en) Process for cultivating basidiomycetes
JPS5756397A (en) Manufacture of single crystal
JPS5316400A (en) Production of piezoelectric oxide single crystal
JPS57166393A (en) Preparation of single crystal
JPS52149065A (en) Liquid phase epitaxial growth method
JPS5267571A (en) Crystallization method for semiconductor
JPS51120984A (en) Single crystal growing method