JPS5688899A - Growth of artificial rock crystal - Google Patents
Growth of artificial rock crystalInfo
- Publication number
- JPS5688899A JPS5688899A JP16713379A JP16713379A JPS5688899A JP S5688899 A JPS5688899 A JP S5688899A JP 16713379 A JP16713379 A JP 16713379A JP 16713379 A JP16713379 A JP 16713379A JP S5688899 A JPS5688899 A JP S5688899A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- rock crystal
- growing
- seed crystal
- rock
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: In growing an artificial rock crystal by synthetic hydrothermal reaction, to improve more extremely a yield for preparing a seed crystal than in a conventional method, by growing the rock crystal using an alkali solution which contains a rock crystal previously.
CONSTITUTION: In growing an artificial rock crystal by packing an autoclave with an alkali solution, feeding a rock crystal of a raw material to the dissolving part at its bottom, and hanging a seed crystal in a growing part at its top, an alkali solution in which a rock crystal is previously dissolved to a saturation state is used, so that the dissolution of the seed crystal is hardly progressed, and a thin seed crystal can be used. About one-third of a conventional thickness is usable, and the yield for preparing the seed crystal can be extremely improved.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16713379A JPS5688899A (en) | 1979-12-21 | 1979-12-21 | Growth of artificial rock crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16713379A JPS5688899A (en) | 1979-12-21 | 1979-12-21 | Growth of artificial rock crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5688899A true JPS5688899A (en) | 1981-07-18 |
Family
ID=15844034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16713379A Pending JPS5688899A (en) | 1979-12-21 | 1979-12-21 | Growth of artificial rock crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5688899A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006069838A (en) * | 2004-09-01 | 2006-03-16 | Kyocera Kinseki Corp | Method of manufacturing artificial quartz crystal |
CN109137074A (en) * | 2018-10-23 | 2019-01-04 | 梁维嘉 | The artificial culture growing method of quartzy embryo |
-
1979
- 1979-12-21 JP JP16713379A patent/JPS5688899A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006069838A (en) * | 2004-09-01 | 2006-03-16 | Kyocera Kinseki Corp | Method of manufacturing artificial quartz crystal |
CN109137074A (en) * | 2018-10-23 | 2019-01-04 | 梁维嘉 | The artificial culture growing method of quartzy embryo |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5792591A (en) | Production of single crystal | |
JPS5688899A (en) | Growth of artificial rock crystal | |
JPS52125686A (en) | Process for growing yeast in high yield | |
JPS5435899A (en) | Production of rare earth element gallium garnet single crystal | |
JPS5551795A (en) | Artificial rock crystal and growing method therefor | |
JPS52138095A (en) | Growth of sapphire single crystal | |
JPS5413477A (en) | Continuous growing apparatus for single crystal | |
JPS549171A (en) | Single crystal pulling method | |
JPS5252870A (en) | Continuous crystallization apparatus | |
JPS5722199A (en) | Method for growing single crystal | |
JPS53139970A (en) | Liquid phase epitaxial growth method of gaas crystal | |
JPS549173A (en) | Method of producing single crystal | |
JPS5571698A (en) | Production of gadolinium gallium garnet single crystal | |
JPS5387985A (en) | Gaseous phase epitaxial growth method for compound semiconductor crystal | |
JPS54128990A (en) | Growing method for single crystal of gallium phosphide | |
JPS52155189A (en) | Multiple layer crystal growth | |
JPS5663899A (en) | Growing method of artificial rock crystal | |
JPS5250164A (en) | Process for production of semiconductor single crystal | |
JPS51148087A (en) | Process for cultivating basidiomycetes | |
JPS5756397A (en) | Manufacture of single crystal | |
JPS5316400A (en) | Production of piezoelectric oxide single crystal | |
JPS57166393A (en) | Preparation of single crystal | |
JPS52149065A (en) | Liquid phase epitaxial growth method | |
JPS5267571A (en) | Crystallization method for semiconductor | |
JPS51120984A (en) | Single crystal growing method |