JPS5571698A - Production of gadolinium gallium garnet single crystal - Google Patents
Production of gadolinium gallium garnet single crystalInfo
- Publication number
- JPS5571698A JPS5571698A JP14385278A JP14385278A JPS5571698A JP S5571698 A JPS5571698 A JP S5571698A JP 14385278 A JP14385278 A JP 14385278A JP 14385278 A JP14385278 A JP 14385278A JP S5571698 A JPS5571698 A JP S5571698A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- garnet
- production
- crystal
- garnet single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Adornments (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtaine the title single crystal for a jewel stable to the sunlight in a high yield by previously adding a predetermined amt. of one or more out of Ti, Zr, Hf and Th to a melt having a compsn. of Gd.Ga.garnet for pulling the single crystal.
CONSTITUTION: 6Wless than 80ppm of one or more out of Ti, Zr, Hf and Th are added to Ga.Gd.garnet (Gd3Ga5O12) pulverized and mixed. They are charged into an iridium crucible and melted in a high frequency furnace to grow a single crystal through a seed crystal by the Czochralski method as usual. Thus, a colorless transparent Gd.Ga.garnet single crystal is obtd. in a high yield, and this crystal has stable properties like diamond's and does not discolor even when exposed to the sunlight.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14385278A JPS5571698A (en) | 1978-11-21 | 1978-11-21 | Production of gadolinium gallium garnet single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14385278A JPS5571698A (en) | 1978-11-21 | 1978-11-21 | Production of gadolinium gallium garnet single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5571698A true JPS5571698A (en) | 1980-05-29 |
JPS5652879B2 JPS5652879B2 (en) | 1981-12-15 |
Family
ID=15348451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14385278A Granted JPS5571698A (en) | 1978-11-21 | 1978-11-21 | Production of gadolinium gallium garnet single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5571698A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6439705A (en) * | 1987-08-06 | 1989-02-10 | Shinetsu Chemical Co | Single crystal of oxide garnet |
CN104471023A (en) * | 2012-10-25 | 2015-03-25 | 株式会社孚士丰 | Thorium-doped garnet-based phosphor, and light-emitting device using same |
-
1978
- 1978-11-21 JP JP14385278A patent/JPS5571698A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6439705A (en) * | 1987-08-06 | 1989-02-10 | Shinetsu Chemical Co | Single crystal of oxide garnet |
CN104471023A (en) * | 2012-10-25 | 2015-03-25 | 株式会社孚士丰 | Thorium-doped garnet-based phosphor, and light-emitting device using same |
Also Published As
Publication number | Publication date |
---|---|
JPS5652879B2 (en) | 1981-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5457498A (en) | Gallium phosphide single crystal of low defect density and production thereof | |
IT1170715B (en) | PROCEDURE FOR PRODUCING PURE MONOCRYSTALS BY CRUCIBLE DRAFT ACCORDING TO CZOCHRALSKI | |
JPS5792591A (en) | Production of single crystal | |
JPS5571698A (en) | Production of gadolinium gallium garnet single crystal | |
JPS549174A (en) | Method of producing seingle crystal | |
JPS5562887A (en) | Production of hexagonal system barium magnesium aluminate (bamga 10o17) single crystal | |
JPS5571699A (en) | Production of gadolinium gallium garnet single crystal | |
JPS5595885A (en) | Crystal for scintillator | |
JPS5532717A (en) | Jewelly material | |
JPS5560089A (en) | Production of gadolinium-gallium-garnet single crystal | |
JPS5276277A (en) | Producing long and narrow crystal | |
JPS5435899A (en) | Production of rare earth element gallium garnet single crystal | |
JPS5722199A (en) | Method for growing single crystal | |
JPS5413477A (en) | Continuous growing apparatus for single crystal | |
JPS57135794A (en) | Method of growing crystal of low-melting oxide | |
JPS57135797A (en) | Production of gadolinium-gallium-garnet single crystal | |
JPS5435898A (en) | Growing method for rare earth element gallium garnet single crystal | |
Pikunov et al. | Growing Single Crystals of Samarium--Cobalt Alloys | |
JPS5532718A (en) | Jewelly material | |
JPS5684397A (en) | Single crystal growing method | |
CISZEK | Method of synthesizing and growing copper-indium-diselenide(CuInSe 2) crystals(Patent Application) | |
JPS56109900A (en) | Growing method for rare earth element aluminate single crystal | |
EP0261647A3 (en) | High resistivity cdte crystal and process for producing the same | |
JPS52138095A (en) | Growth of sapphire single crystal | |
JPS5542238A (en) | Production of lithium tantalate single crystal |