JPS5365300A - Method of growing single crystal epitaxial layer on substrate and basic holder used in this method - Google Patents

Method of growing single crystal epitaxial layer on substrate and basic holder used in this method

Info

Publication number
JPS5365300A
JPS5365300A JP13904077A JP13904077A JPS5365300A JP S5365300 A JPS5365300 A JP S5365300A JP 13904077 A JP13904077 A JP 13904077A JP 13904077 A JP13904077 A JP 13904077A JP S5365300 A JPS5365300 A JP S5365300A
Authority
JP
Japan
Prior art keywords
substrate
single crystal
epitaxial layer
holder used
growing single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13904077A
Other languages
Japanese (ja)
Inventor
Baruterusu Gunteru
Patsushigu Geruto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5365300A publication Critical patent/JPS5365300A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/062—Vertical dipping system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP13904077A 1976-11-23 1977-11-21 Method of growing single crystal epitaxial layer on substrate and basic holder used in this method Pending JPS5365300A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762653049 DE2653049C3 (en) 1976-11-23 1976-11-23 Device for liquid phase epitaxy

Publications (1)

Publication Number Publication Date
JPS5365300A true JPS5365300A (en) 1978-06-10

Family

ID=5993712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13904077A Pending JPS5365300A (en) 1976-11-23 1977-11-21 Method of growing single crystal epitaxial layer on substrate and basic holder used in this method

Country Status (4)

Country Link
JP (1) JPS5365300A (en)
DE (1) DE2653049C3 (en)
FR (1) FR2378562A1 (en)
GB (1) GB1553495A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190683A (en) * 1978-08-28 1980-02-26 International Business Machines Corporation Method for forming a liquid phase epitaxial film on a wafer
US4801436A (en) * 1986-12-19 1989-01-31 Living Water Corporation Crystallizing apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915686A (en) * 1972-06-05 1974-02-12
JPS4939222A (en) * 1972-08-23 1974-04-12

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3804060A (en) * 1970-03-27 1974-04-16 Sperry Rand Corp Liquid epitaxy apparatus
JPS53271B1 (en) * 1971-03-05 1978-01-06

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915686A (en) * 1972-06-05 1974-02-12
JPS4939222A (en) * 1972-08-23 1974-04-12

Also Published As

Publication number Publication date
DE2653049C3 (en) 1979-10-04
DE2653049B2 (en) 1979-02-08
GB1553495A (en) 1979-09-26
FR2378562A1 (en) 1978-08-25
DE2653049A1 (en) 1978-05-24

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