GB1279538A - A manufacturing method of a monocrystal of a compound semiconductor - Google Patents

A manufacturing method of a monocrystal of a compound semiconductor

Info

Publication number
GB1279538A
GB1279538A GB1477270A GB1477270A GB1279538A GB 1279538 A GB1279538 A GB 1279538A GB 1477270 A GB1477270 A GB 1477270A GB 1477270 A GB1477270 A GB 1477270A GB 1279538 A GB1279538 A GB 1279538A
Authority
GB
United Kingdom
Prior art keywords
atoms
deposited
compound semiconductor
gaas
march
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1477270A
Inventor
Masami Yokozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of GB1279538A publication Critical patent/GB1279538A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1279538 Depositing semi-conductor compounds MATSUSHITA ELECTRONICS CORP 26 March 1970 [28 March 1969] 14772/70 Heading C1A [Also in Division H1] A monocrystalline layer of a compound semiconductor such as GaAs, InAs, ZnTe or CdTe is deposited epitaxially on a substrate of, for example, Ge or Si, the surface of which has first been doped with one of the component elements of the compound semi-conductor to a surface concentration of at least 5 x 10<SP>19</SP> atoms/cm.<SP>3</SP>, the mode of growth of the epitaxial layer being thereby controlled. In particular, when GaAs is epitaxially deposited from elemental Ga and As in a carrier gas of nitrogen containing iodine on to a (111) surface of a Ge substrate, the upper surface of the deposited layer can be made to comprise exposed atoms of either Ga or As by firstly doping the Ge surface with atoms of the component element which is not to be thus exposed to a surface concentration of the order of 10<SP>20</SP> atoms cm.<SP>3</SP>
GB1477270A 1969-03-28 1970-03-26 A manufacturing method of a monocrystal of a compound semiconductor Expired GB1279538A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2403069A JPS5123471B1 (en) 1969-03-28 1969-03-28

Publications (1)

Publication Number Publication Date
GB1279538A true GB1279538A (en) 1972-06-28

Family

ID=12127104

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1477270A Expired GB1279538A (en) 1969-03-28 1970-03-26 A manufacturing method of a monocrystal of a compound semiconductor

Country Status (3)

Country Link
JP (1) JPS5123471B1 (en)
FR (1) FR2040075A5 (en)
GB (1) GB1279538A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2314672A1 (en) * 1973-03-23 1974-10-03 Siemens Ag METHOD OF HETEROEPITACTIC GROWING OF III-V COMPOUND SEMICONDUCTOR MATERIAL

Also Published As

Publication number Publication date
DE2014509B2 (en) 1972-10-26
JPS5123471B1 (en) 1976-07-16
FR2040075A5 (en) 1971-01-15
DE2014509A1 (en) 1970-10-01

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee