GB1319560A - Epitaxial composite and method of making - Google Patents

Epitaxial composite and method of making

Info

Publication number
GB1319560A
GB1319560A GB1319560DA GB1319560A GB 1319560 A GB1319560 A GB 1319560A GB 1319560D A GB1319560D A GB 1319560DA GB 1319560 A GB1319560 A GB 1319560A
Authority
GB
United Kingdom
Prior art keywords
film
substrate
group iii
epitaxial
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
North American Rockwell Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North American Rockwell Corp filed Critical North American Rockwell Corp
Publication of GB1319560A publication Critical patent/GB1319560A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1319560 Epitaxial III-V film NORTH AMERICAN ROCKWELL CORP 4 June 1970 7566/73 Divided out of 1139311 Heading C1A An epitaxial film of a Group III-V compound on a monocrystalline sapphire (α-Al 2 O 3 ) substrate whose surface orientation is (0001), (1123), (0112), 1125), or (1126), or is about 10‹ from the (0112) plane, may be produced by introducing one or more gaseous Group V hydrides or alkyls and one or more gaseous Group III alkyls into a reactor containing the heated substrate. The orientation of the film may be (111) or (110). Binary and mixed compounds are exemplified. The reactants may be Me 3 Ga, Et 3 Ga, Me 3 Al, Et 3 Al, Me 3 In, Et 3 In, Ph 3 , Me 3 P, AsH 3 , Me 3 As, SbH 3 , Me 3 Sb, and may be introduced under reduced pressure in a carrier gas, e.g. H 2 , He, Ar, N 2 , with the Group V compound in excess. Small amounts of e.g. AsCl 3 and/or HCl may be present. The substrate may be placed on a SiC-coated C pedestal heated by RF induction to 650-800‹ C. The film may be doped during formation by introducing e.g. H 2 Se or H 2 S (n-type), Me 2 Zn, Et 2 Zn or Me 2 Cd (p-type). Multilayers of different Group III-V compounds may be formed.
GB1319560D 1970-06-04 1970-06-04 Epitaxial composite and method of making Expired GB1319560A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB756673 1970-06-04
GB2708770 1970-06-04

Publications (1)

Publication Number Publication Date
GB1319560A true GB1319560A (en) 1973-06-06

Family

ID=33161205

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1319560D Expired GB1319560A (en) 1970-06-04 1970-06-04 Epitaxial composite and method of making

Country Status (1)

Country Link
GB (1) GB1319560A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4214926A (en) * 1976-07-02 1980-07-29 Tdk Electronics Co., Ltd. Method of doping IIb or VIb group elements into a boron phosphide semiconductor
EP0097772A2 (en) * 1982-06-30 1984-01-11 International Business Machines Corporation Structure comprising a monocrystalline substrate supporting a device layer of semiconductor material
DE3635279A1 (en) * 1985-10-16 1987-05-07 Japan Res Dev Corp GAS PHASE EPITAXIAL METHOD FOR A CONNECTION SEMICONDUCTOR SINGLE CRYSTAL AND DEVICE FOR CARRYING OUT THE METHOD
US4716130A (en) * 1984-04-26 1987-12-29 American Telephone And Telegraph Company, At&T Bell Laboratories MOCVD of semi-insulating indium phosphide based compositions
US5064684A (en) * 1989-08-02 1991-11-12 Eastman Kodak Company Waveguides, interferometers, and methods of their formation
CN109119530A (en) * 2017-06-23 2019-01-01 松下知识产权经营株式会社 Thin-film structure and its manufacturing method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4214926A (en) * 1976-07-02 1980-07-29 Tdk Electronics Co., Ltd. Method of doping IIb or VIb group elements into a boron phosphide semiconductor
EP0097772A2 (en) * 1982-06-30 1984-01-11 International Business Machines Corporation Structure comprising a monocrystalline substrate supporting a device layer of semiconductor material
EP0097772A3 (en) * 1982-06-30 1986-06-04 International Business Machines Corporation Structure comprising a monocrystalline substrate supporting a device layer of semiconductor material
US4716130A (en) * 1984-04-26 1987-12-29 American Telephone And Telegraph Company, At&T Bell Laboratories MOCVD of semi-insulating indium phosphide based compositions
DE3635279A1 (en) * 1985-10-16 1987-05-07 Japan Res Dev Corp GAS PHASE EPITAXIAL METHOD FOR A CONNECTION SEMICONDUCTOR SINGLE CRYSTAL AND DEVICE FOR CARRYING OUT THE METHOD
US5064684A (en) * 1989-08-02 1991-11-12 Eastman Kodak Company Waveguides, interferometers, and methods of their formation
CN109119530A (en) * 2017-06-23 2019-01-01 松下知识产权经营株式会社 Thin-film structure and its manufacturing method
US10697090B2 (en) * 2017-06-23 2020-06-30 Panasonic Intellectual Property Management Co., Ltd. Thin-film structural body and method for fabricating thereof
CN109119530B (en) * 2017-06-23 2023-10-17 松下知识产权经营株式会社 Film structure and method for manufacturing same

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years