NL168892B - PROCESS FOR GROWING AN EPITAXIAL THIN COATING OF A TYPE III (A) - V (A) COMPOUND OF THE PERIODIC SYSTEM OF THE ELEMENTS AND SEMICONDUCTOR DEVICE, USING THIS PROCESS, UNDER REDUCED PRESSURE. - Google Patents

PROCESS FOR GROWING AN EPITAXIAL THIN COATING OF A TYPE III (A) - V (A) COMPOUND OF THE PERIODIC SYSTEM OF THE ELEMENTS AND SEMICONDUCTOR DEVICE, USING THIS PROCESS, UNDER REDUCED PRESSURE.

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Publication number
NL168892B
NL168892B NL6919180.A NL6919180A NL168892B NL 168892 B NL168892 B NL 168892B NL 6919180 A NL6919180 A NL 6919180A NL 168892 B NL168892 B NL 168892B
Authority
NL
Netherlands
Prior art keywords
elements
growing
compound
semiconductor device
reduced pressure
Prior art date
Application number
NL6919180.A
Other languages
Dutch (nl)
Other versions
NL168892C (en
NL6919180A (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of NL6919180A publication Critical patent/NL6919180A/xx
Publication of NL168892B publication Critical patent/NL168892B/en
Application granted granted Critical
Publication of NL168892C publication Critical patent/NL168892C/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/084—Ion implantation of compound devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

1,270,550. Semi-conductor device manufacture. WESTERN ELECTRIC CO. Inc. 22 Dec., 1969 [27 Dec., 1968], No. 62287/69. Heading H1K. [Also in Divisions C1 and C7] An epitaxial film of Group III(a) and V(a) elements (Mendelyeev Table given in the Handbook of Chemistry and Physics) is deposited on a substrate of e.g. Si, Ge, gallium arsenide, phosphide or arsenic phosphide, indium arsenide or phosphide or sapphire. Examples of the film are (1) gallium arsenide, (2) gallium phosphide, (3) Ga.As 0 . 25 P 0 . 75 , (4) gallium arsenide with Zn, 'and (5) Gallium arsenide with Te.
NLAANVRAGE6919180,A 1968-12-27 1969-12-22 PROCESS FOR GROWING AN EPITAXIAL THIN COATING OF A COMPONENT TYPE COMPONENT AND SEMICONDUCTOR DEVICE UNDER REDUCED PRESSURE USING THIS METHOD. NL168892C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78747068A 1968-12-27 1968-12-27

Publications (3)

Publication Number Publication Date
NL6919180A NL6919180A (en) 1970-06-30
NL168892B true NL168892B (en) 1981-12-16
NL168892C NL168892C (en) 1982-05-17

Family

ID=25141584

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE6919180,A NL168892C (en) 1968-12-27 1969-12-22 PROCESS FOR GROWING AN EPITAXIAL THIN COATING OF A COMPONENT TYPE COMPONENT AND SEMICONDUCTOR DEVICE UNDER REDUCED PRESSURE USING THIS METHOD.

Country Status (8)

Country Link
US (1) US3615931A (en)
JP (1) JPS4930557B1 (en)
BE (1) BE743687A (en)
DE (1) DE1965258C3 (en)
FR (1) FR2027188A1 (en)
GB (1) GB1270550A (en)
NL (1) NL168892C (en)
SE (1) SE361828B (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3751310A (en) * 1971-03-25 1973-08-07 Bell Telephone Labor Inc Germanium doped epitaxial films by the molecular beam method
US3865646A (en) * 1972-09-25 1975-02-11 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US3865625A (en) * 1972-10-13 1975-02-11 Bell Telephone Labor Inc Molecular beam epitaxy shadowing technique for fabricating dielectric optical waveguides
US3839084A (en) * 1972-11-29 1974-10-01 Bell Telephone Labor Inc Molecular beam epitaxy method for fabricating magnesium doped thin films of group iii(a)-v(a) compounds
US3862857A (en) * 1972-12-26 1975-01-28 Ibm Method for making amorphous semiconductor thin films
FR2265872B1 (en) * 1974-03-27 1977-10-14 Anvar
US3928092A (en) * 1974-08-28 1975-12-23 Bell Telephone Labor Inc Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices
US4028146A (en) * 1975-03-11 1977-06-07 Bell Telephone Laboratories, Incorporated LPE Technique for fabricating tapered optical couplers
US4126930A (en) * 1975-06-19 1978-11-28 Varian Associates, Inc. Magnesium doping of AlGaAs
JPS524447U (en) * 1975-06-24 1977-01-12
US4063974A (en) * 1975-11-14 1977-12-20 Hughes Aircraft Company Planar reactive evaporation method for the deposition of compound semiconducting films
JPS5318623A (en) * 1976-08-05 1978-02-21 Nobuyuki Toyoda Method of producing dry readyymixed concrete from waste readyymixed concrete
JPS53123659A (en) * 1977-04-05 1978-10-28 Futaba Denshi Kogyo Kk Method of producing compound semiconductor wafer
GB1574525A (en) * 1977-04-13 1980-09-10 Philips Electronic Associated Method of manufacturing semiconductor devices and semiconductor devices manufactured by the method
CA1102013A (en) * 1977-05-26 1981-05-26 Chin-An Chang Molecular-beam epitaxy system and method including hydrogen treatment
US4116733A (en) * 1977-10-06 1978-09-26 Rca Corporation Vapor phase growth technique of III-V compounds utilizing a preheating step
GB2030551B (en) * 1978-09-22 1982-08-04 Philips Electronic Associated Growing a gaas layer doped with s se or te
US4239584A (en) * 1978-09-29 1980-12-16 International Business Machines Corporation Molecular-beam epitaxy system and method including hydrogen treatment
EP0031180A3 (en) * 1979-12-19 1983-07-20 Philips Electronics Uk Limited Method of growing a doped iii-v alloy layer by molecular beam epitaxy and a semiconductor device comprising a semiconductor substrate bearing an epitaxial layer of a doped iii-v alloy grown by such a method
NL8300780A (en) * 1983-03-03 1984-10-01 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH A MOLECULAR BUNDLE TECHNIQUE
US4550411A (en) * 1983-03-30 1985-10-29 Vg Instruments Group Limited Sources used in molecular beam epitaxy
US4622093A (en) * 1983-07-27 1986-11-11 At&T Bell Laboratories Method of selective area epitaxial growth using ion beams
US4523051A (en) * 1983-09-27 1985-06-11 The Boeing Company Thin films of mixed metal compounds
US4833100A (en) * 1985-12-12 1989-05-23 Kozo Iizuka, Director-General Of Agency Of Industrial Science And Technology Method for producing a silicon thin film by MBE using silicon beam precleaning
JP2792423B2 (en) * 1994-01-14 1998-09-03 日本電気株式会社 Crystal growth method and apparatus
JP2001522141A (en) 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド Wafer processing method using low mass support
US9885123B2 (en) 2011-03-16 2018-02-06 Asm America, Inc. Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow

Also Published As

Publication number Publication date
FR2027188A1 (en) 1970-09-25
BE743687A (en) 1970-05-28
NL168892C (en) 1982-05-17
DE1965258B2 (en) 1978-10-26
DE1965258A1 (en) 1970-07-16
GB1270550A (en) 1972-04-12
US3615931A (en) 1971-10-26
NL6919180A (en) 1970-06-30
JPS4930557B1 (en) 1974-08-14
SE361828B (en) 1973-11-19
DE1965258C3 (en) 1979-06-21

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Legal Events

Date Code Title Description
V4 Discontinued because of reaching the maximum lifetime of a patent