NL168892C - PROCESS FOR GROWING AN EPITAXIAL THIN COATING OF A COMPONENT TYPE COMPONENT AND SEMICONDUCTOR DEVICE UNDER REDUCED PRESSURE USING THIS METHOD. - Google Patents
PROCESS FOR GROWING AN EPITAXIAL THIN COATING OF A COMPONENT TYPE COMPONENT AND SEMICONDUCTOR DEVICE UNDER REDUCED PRESSURE USING THIS METHOD.Info
- Publication number
- NL168892C NL168892C NLAANVRAGE6919180,A NL6919180A NL168892C NL 168892 C NL168892 C NL 168892C NL 6919180 A NL6919180 A NL 6919180A NL 168892 C NL168892 C NL 168892C
- Authority
- NL
- Netherlands
- Prior art keywords
- growing
- semiconductor device
- reduced pressure
- under reduced
- component
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/017—Clean surfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/084—Ion implantation of compound devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/158—Sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
1,270,550. Semi-conductor device manufacture. WESTERN ELECTRIC CO. Inc. 22 Dec., 1969 [27 Dec., 1968], No. 62287/69. Heading H1K. [Also in Divisions C1 and C7] An epitaxial film of Group III(a) and V(a) elements (Mendelyeev Table given in the Handbook of Chemistry and Physics) is deposited on a substrate of e.g. Si, Ge, gallium arsenide, phosphide or arsenic phosphide, indium arsenide or phosphide or sapphire. Examples of the film are (1) gallium arsenide, (2) gallium phosphide, (3) Ga.As 0 . 25 P 0 . 75 , (4) gallium arsenide with Zn, 'and (5) Gallium arsenide with Te.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78747068A | 1968-12-27 | 1968-12-27 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL6919180A NL6919180A (en) | 1970-06-30 |
NL168892B NL168892B (en) | 1981-12-16 |
NL168892C true NL168892C (en) | 1982-05-17 |
Family
ID=25141584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE6919180,A NL168892C (en) | 1968-12-27 | 1969-12-22 | PROCESS FOR GROWING AN EPITAXIAL THIN COATING OF A COMPONENT TYPE COMPONENT AND SEMICONDUCTOR DEVICE UNDER REDUCED PRESSURE USING THIS METHOD. |
Country Status (8)
Country | Link |
---|---|
US (1) | US3615931A (en) |
JP (1) | JPS4930557B1 (en) |
BE (1) | BE743687A (en) |
DE (1) | DE1965258C3 (en) |
FR (1) | FR2027188A1 (en) |
GB (1) | GB1270550A (en) |
NL (1) | NL168892C (en) |
SE (1) | SE361828B (en) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3751310A (en) * | 1971-03-25 | 1973-08-07 | Bell Telephone Labor Inc | Germanium doped epitaxial films by the molecular beam method |
US3865646A (en) * | 1972-09-25 | 1975-02-11 | Bell Telephone Labor Inc | Dielectric optical waveguides and technique for fabricating same |
US3865625A (en) * | 1972-10-13 | 1975-02-11 | Bell Telephone Labor Inc | Molecular beam epitaxy shadowing technique for fabricating dielectric optical waveguides |
US3839084A (en) * | 1972-11-29 | 1974-10-01 | Bell Telephone Labor Inc | Molecular beam epitaxy method for fabricating magnesium doped thin films of group iii(a)-v(a) compounds |
US3862857A (en) * | 1972-12-26 | 1975-01-28 | Ibm | Method for making amorphous semiconductor thin films |
FR2265872B1 (en) * | 1974-03-27 | 1977-10-14 | Anvar | |
US3928092A (en) * | 1974-08-28 | 1975-12-23 | Bell Telephone Labor Inc | Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices |
US4028146A (en) * | 1975-03-11 | 1977-06-07 | Bell Telephone Laboratories, Incorporated | LPE Technique for fabricating tapered optical couplers |
US4126930A (en) * | 1975-06-19 | 1978-11-28 | Varian Associates, Inc. | Magnesium doping of AlGaAs |
JPS524447U (en) * | 1975-06-24 | 1977-01-12 | ||
US4063974A (en) * | 1975-11-14 | 1977-12-20 | Hughes Aircraft Company | Planar reactive evaporation method for the deposition of compound semiconducting films |
JPS5318623A (en) * | 1976-08-05 | 1978-02-21 | Nobuyuki Toyoda | Method of producing dry readyymixed concrete from waste readyymixed concrete |
JPS53123659A (en) * | 1977-04-05 | 1978-10-28 | Futaba Denshi Kogyo Kk | Method of producing compound semiconductor wafer |
GB1574525A (en) * | 1977-04-13 | 1980-09-10 | Philips Electronic Associated | Method of manufacturing semiconductor devices and semiconductor devices manufactured by the method |
CA1102013A (en) * | 1977-05-26 | 1981-05-26 | Chin-An Chang | Molecular-beam epitaxy system and method including hydrogen treatment |
US4116733A (en) * | 1977-10-06 | 1978-09-26 | Rca Corporation | Vapor phase growth technique of III-V compounds utilizing a preheating step |
GB2030551B (en) * | 1978-09-22 | 1982-08-04 | Philips Electronic Associated | Growing a gaas layer doped with s se or te |
US4239584A (en) * | 1978-09-29 | 1980-12-16 | International Business Machines Corporation | Molecular-beam epitaxy system and method including hydrogen treatment |
EP0031180A3 (en) * | 1979-12-19 | 1983-07-20 | Philips Electronics Uk Limited | Method of growing a doped iii-v alloy layer by molecular beam epitaxy and a semiconductor device comprising a semiconductor substrate bearing an epitaxial layer of a doped iii-v alloy grown by such a method |
NL8300780A (en) * | 1983-03-03 | 1984-10-01 | Philips Nv | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH A MOLECULAR BUNDLE TECHNIQUE |
US4550411A (en) * | 1983-03-30 | 1985-10-29 | Vg Instruments Group Limited | Sources used in molecular beam epitaxy |
US4622093A (en) * | 1983-07-27 | 1986-11-11 | At&T Bell Laboratories | Method of selective area epitaxial growth using ion beams |
US4523051A (en) * | 1983-09-27 | 1985-06-11 | The Boeing Company | Thin films of mixed metal compounds |
US4833100A (en) * | 1985-12-12 | 1989-05-23 | Kozo Iizuka, Director-General Of Agency Of Industrial Science And Technology | Method for producing a silicon thin film by MBE using silicon beam precleaning |
JP2792423B2 (en) * | 1994-01-14 | 1998-09-03 | 日本電気株式会社 | Crystal growth method and apparatus |
KR100551980B1 (en) * | 1997-11-03 | 2006-02-20 | 에이에스엠 아메리카, 인코포레이티드 | Method and Apparatus of Processing Wafers with Low Mass Support |
US9885123B2 (en) | 2011-03-16 | 2018-02-06 | Asm America, Inc. | Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow |
-
1968
- 1968-12-27 US US787470A patent/US3615931A/en not_active Expired - Lifetime
-
1969
- 1969-12-18 SE SE17494/69A patent/SE361828B/xx unknown
- 1969-12-22 GB GB62287/69A patent/GB1270550A/en not_active Expired
- 1969-12-22 FR FR6944378A patent/FR2027188A1/fr active Pending
- 1969-12-22 NL NLAANVRAGE6919180,A patent/NL168892C/en not_active IP Right Cessation
- 1969-12-23 JP JP44103106A patent/JPS4930557B1/ja active Pending
- 1969-12-24 BE BE743687D patent/BE743687A/xx not_active IP Right Cessation
- 1969-12-29 DE DE1965258A patent/DE1965258C3/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1270550A (en) | 1972-04-12 |
NL168892B (en) | 1981-12-16 |
DE1965258C3 (en) | 1979-06-21 |
DE1965258A1 (en) | 1970-07-16 |
DE1965258B2 (en) | 1978-10-26 |
SE361828B (en) | 1973-11-19 |
FR2027188A1 (en) | 1970-09-25 |
NL6919180A (en) | 1970-06-30 |
US3615931A (en) | 1971-10-26 |
JPS4930557B1 (en) | 1974-08-14 |
BE743687A (en) | 1970-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
V4 | Discontinued because of reaching the maximum lifetime of a patent |