GB802842A - Improvements in or relating to processes for the production of alloy single crystals and semi-conductor arrangements produced by such processes - Google Patents

Improvements in or relating to processes for the production of alloy single crystals and semi-conductor arrangements produced by such processes

Info

Publication number
GB802842A
GB802842A GB21811/56A GB2181156A GB802842A GB 802842 A GB802842 A GB 802842A GB 21811/56 A GB21811/56 A GB 21811/56A GB 2181156 A GB2181156 A GB 2181156A GB 802842 A GB802842 A GB 802842A
Authority
GB
United Kingdom
Prior art keywords
germanium
silicon
deposited
processes
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21811/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB802842A publication Critical patent/GB802842A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)

Abstract

In a process for the production of semiconductor single crystals of an alloy having a predetermined composition, the components of the alloy are deposited from the gas or vapour phase on the surface of a seed crystal of one component, and the ratio of the components deposited is gradually changed from an initial composition consisting almost exclusively of the same component as the seed crystal to the predetermined composition. The seed crystal may be silicon on which silicon with a small amount of germanium is deposited from a gas mixture, the proportion of germanium being increased as the deposition progresses, until the desired composition is reached; the proportion of silicon deposited may then be reduced until a zone of the crystal consisting only of germanium is obtained. The gas mixture may consist of silicon chloride and germanium chloride, the proportions being varied as required, the silicon and germanium being obtained by thermal decomposition and/or reduction with hydrogen. Donor and acceptor material may be added to the gas mixture for inclusion in the growing crystals to obtain zones of different type or degree of conductivity. Acceptor material may be added to the first part of the crystal to obtain a strong p-conductivity zone, followed by donor material and then by acceptor material to obtain a P-N-P-junction, the strongly-conductive zone serving as an emitter. Crystals may be grown having a middle zone of a material or alloy of desired band-width, diffusion length and carrier mobility, as a base with adjacent layers of different materials or alloys as emitters or collectors or intermediate layers such as hook or intrinsic zones.
GB21811/56A 1955-07-13 1956-07-13 Improvements in or relating to processes for the production of alloy single crystals and semi-conductor arrangements produced by such processes Expired GB802842A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE802842X 1955-07-13

Publications (1)

Publication Number Publication Date
GB802842A true GB802842A (en) 1958-10-15

Family

ID=6719994

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21811/56A Expired GB802842A (en) 1955-07-13 1956-07-13 Improvements in or relating to processes for the production of alloy single crystals and semi-conductor arrangements produced by such processes

Country Status (3)

Country Link
FR (1) FR1171320A (en)
GB (1) GB802842A (en)
NL (1) NL208892A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3188182A (en) * 1961-06-29 1965-06-08 Gen Electric Use of the working material as part of the crystal making apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL121135C (en) * 1960-01-29
US3118794A (en) * 1960-09-06 1964-01-21 Bell Telephone Labor Inc Composite tunnel diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3188182A (en) * 1961-06-29 1965-06-08 Gen Electric Use of the working material as part of the crystal making apparatus

Also Published As

Publication number Publication date
NL208892A (en) 1900-01-01
FR1171320A (en) 1959-01-23

Similar Documents

Publication Publication Date Title
US2957789A (en) Semiconductor devices and methods of preparing the same
GB1056919A (en) Process for growing semiconductor crystals
GB923801A (en) Improvements in methods of producing semi-conductor arrangements
GB1329041A (en) Method of manufacturing semiconductor elements by a liquid phase growing method
US3729348A (en) Method for the solution growth of more perfect semiconductor crystals
GB925106A (en) A process for producing a rod of low-resistance semi-conductor material
US3089788A (en) Epitaxial deposition of semiconductor materials
GB802842A (en) Improvements in or relating to processes for the production of alloy single crystals and semi-conductor arrangements produced by such processes
US3669769A (en) Method for minimizing autodoping in epitaxial deposition
GB936832A (en) Improvements relating to the production of p.n. junctions in semi-conductor material
GB1134964A (en) Improvements in or relating to the production of layers of a silicon or germanium nitrogen compound on semiconductor crystals
US3623905A (en) Gallium compounds with reduced silicon contamination and a method of manufacturing them
Berkenblit et al. Epitaxial Growth of Mirror Smooth Ge on GaAs and Ge by the Low Temperature GeI2 Disproportionate Reaction
US3823043A (en) Method of manufacturing semiconductor body
GB995911A (en) A process for use in the production of a semi-conductor device
US2887453A (en) Semi-conductor activated with dissociated ammonia
US3473980A (en) Significant impurity sources for solid state diffusion
GB813841A (en) Improvements in or relating to processes for producing zones having different impurity contents in semi-conductor crystals
GB1075555A (en) Process for the formation of a layer of a semiconductor material on a crystalline base
GB1056720A (en) Improved method of epitaxially vapour depositing semiconductor material
GB737527A (en) A method for the manufacture of semi-conductors having excess-conductive and deficitconductive regions with sharp borders
US3375146A (en) Method for producing a p-n junction in a monocrystalline semiconductor member by etching and diffusion
US3796614A (en) Method for controlling intermetallic semiconductor diffusions
SU107450A1 (en) The method of obtaining single crystals of germanium and silicon with a given content of impurities
JPS5618413A (en) Apparatus for vapor growth of compound semiconductor