GB975840A - Semiconductors - Google Patents

Semiconductors

Info

Publication number
GB975840A
GB975840A GB6605/62A GB660562A GB975840A GB 975840 A GB975840 A GB 975840A GB 6605/62 A GB6605/62 A GB 6605/62A GB 660562 A GB660562 A GB 660562A GB 975840 A GB975840 A GB 975840A
Authority
GB
United Kingdom
Prior art keywords
germanium
tetrachloride
single crystal
gaseous mixture
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6605/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck and Co Inc
Original Assignee
Merck and Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck and Co Inc filed Critical Merck and Co Inc
Publication of GB975840A publication Critical patent/GB975840A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A germanium single crystal semi-conductor is formed by heating a single crystal germanium substrate to 750-900 DEG C. in a gaseous mixture <PICT:0975840/C6-C7/1> of germanium tetrachloride and hydrogen containing 0.001-0.2% by volume of germanium tetrachloride. Boron trichloride or phosphorus trichloride may be added to the gaseous mixture to form either a P or N type conductivity deposit. As shown in the Figure a germanium wafer 7 supported on a carbon or silicon support 6 in a quartz reaction chamber 1 is heated to 850 DEG C. in hydrogen and the tetrachloride vapour is then admitted.
GB6605/62A 1961-02-27 1962-02-20 Semiconductors Expired GB975840A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9204261A 1961-02-27 1961-02-27

Publications (1)

Publication Number Publication Date
GB975840A true GB975840A (en) 1964-11-18

Family

ID=22231094

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6605/62A Expired GB975840A (en) 1961-02-27 1962-02-20 Semiconductors

Country Status (5)

Country Link
BE (1) BE614058A (en)
CH (1) CH438230A (en)
DE (1) DE1444504A1 (en)
GB (1) GB975840A (en)
NL (1) NL275317A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117107357A (en) * 2023-10-23 2023-11-24 中铝科学技术研究院有限公司 Germanium rod for vapor deposition, preparation method thereof and germanium tetrachloride reduction device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117107357A (en) * 2023-10-23 2023-11-24 中铝科学技术研究院有限公司 Germanium rod for vapor deposition, preparation method thereof and germanium tetrachloride reduction device
CN117107357B (en) * 2023-10-23 2024-04-19 中铝科学技术研究院有限公司 Germanium rod for vapor deposition, preparation method thereof and germanium tetrachloride reduction device

Also Published As

Publication number Publication date
DE1444504A1 (en) 1968-11-07
NL275317A (en) 1900-01-01
BE614058A (en) 1962-08-16
CH438230A (en) 1967-06-30

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