GB1118631A - Process for the manufacture, purification and/or doping of monocrystalline or polycrystalline semiconductor comp ounds - Google Patents

Process for the manufacture, purification and/or doping of monocrystalline or polycrystalline semiconductor comp ounds

Info

Publication number
GB1118631A
GB1118631A GB28300/65A GB2830065A GB1118631A GB 1118631 A GB1118631 A GB 1118631A GB 28300/65 A GB28300/65 A GB 28300/65A GB 2830065 A GB2830065 A GB 2830065A GB 1118631 A GB1118631 A GB 1118631A
Authority
GB
United Kingdom
Prior art keywords
inert gas
monocrystalline
doping
purification
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB28300/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Publication of GB1118631A publication Critical patent/GB1118631A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y10S117/907—Refluxing atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/041—Doping control in crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,118,631. Crystal-pulling gallium arsenide. WACKER-CHEMIE G.m.b.H. 5 July, 1965 [3 July, 1964], No. 28300/65. Heading BIS. A crystal of gallium arsenide 13 is pulled from a crucible 14 in a vessel 8 heated by a resistance coil 15 and containing arsenic vapour from a source 16. A slow current of inert gas is passed under pressure from an inlet 4, through the narrow annular space between a neck 7 and a pulling rod 5, the narrow annular space between the pulling rod and a sleeve 9, a capillary tube 11, and an outlet tube 12. Arsenic entrained in the inert gas is condensed out in the outlet tube 12. The pressure difference may be 0.1-3 mm of Hg, corresponding to a flow of 0.002-0.02 1/hr. The inert gas may be hydrogen (to remove an oxide film), nitrogen or a noble gas.
GB28300/65A 1964-07-03 1965-07-05 Process for the manufacture, purification and/or doping of monocrystalline or polycrystalline semiconductor comp ounds Expired GB1118631A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEW37104A DE1233828B (en) 1964-07-03 1964-07-03 Process for the production, cleaning and / or doping of monocrystalline or polycrystalline semiconductor compounds

Publications (1)

Publication Number Publication Date
GB1118631A true GB1118631A (en) 1968-07-03

Family

ID=7601387

Family Applications (1)

Application Number Title Priority Date Filing Date
GB28300/65A Expired GB1118631A (en) 1964-07-03 1965-07-05 Process for the manufacture, purification and/or doping of monocrystalline or polycrystalline semiconductor comp ounds

Country Status (5)

Country Link
US (1) US3488157A (en)
BE (1) BE666309A (en)
DE (1) DE1233828B (en)
GB (1) GB1118631A (en)
NL (1) NL6508554A (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3661599A (en) * 1969-03-25 1972-05-09 Martin Marietta Corp HIGH TEMPERATURE TiC-VC STRUCTURAL MATERIALS
BE795938A (en) * 1972-03-01 1973-08-27 Siemens Ag METHOD OF MANUFACTURING A DISLOCATION-FREE MONOCRISTALLINE GALLIUM ARSENIDE BAR
FR2175595B1 (en) * 1972-03-15 1974-09-13 Radiotechnique Compelec
US3902860A (en) * 1972-09-28 1975-09-02 Sumitomo Electric Industries Thermal treatment of semiconducting compounds having one or more volatile components
DE2420899A1 (en) * 1974-04-30 1975-12-11 Wacker Chemitronic METHOD FOR PRODUCING SINGLE CRYSTALLINE GALLIUM ARSENIDE
US4093781A (en) * 1975-05-27 1978-06-06 Rockwell International Corporation Epitaxial, sodium-substituted lithium ferrite films
DE2548046C3 (en) * 1975-10-27 1982-12-02 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Method of pulling single crystal silicon rods
FR2526449B1 (en) * 1982-05-04 1985-07-05 Commissariat Energie Atomique METHOD AND DEVICE FOR MANUFACTURING A SINGLE CRYSTAL, FREE OF ANY CONSTRAINT, OF A FERROELECTRIC COMPOUND WITH A CRYSTALLINE STRUCTURE
JPS6041639B2 (en) * 1982-07-08 1985-09-18 財団法人 半導体研究振興会 GaAs single crystal pulling equipment
JPS6096596A (en) * 1983-10-28 1985-05-30 Sumitomo Electric Ind Ltd Shaft for pulling single crystal
US5256381A (en) * 1984-02-21 1993-10-26 Sumitomo Electric Industries, Ltd. Apparatus for growing single crystals of III-V compound semiconductors
JPH0699217B2 (en) * 1989-07-31 1994-12-07 信越半導体株式会社 Single crystal growth equipment

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
US2962363A (en) * 1957-07-09 1960-11-29 Pacific Semiconductors Inc Crystal pulling apparatus and method
US3036888A (en) * 1959-12-29 1962-05-29 Norton Co Process for producing titanium nitride
US3154384A (en) * 1960-04-13 1964-10-27 Texas Instruments Inc Apparatus for growing compound semiconductor crystal
US3260573A (en) * 1963-06-26 1966-07-12 Siemens Ag Zone melting gallium in a recycling arsenic atmosphere
US3338761A (en) * 1965-03-31 1967-08-29 Texas Instruments Inc Method and apparatus for making compound materials

Also Published As

Publication number Publication date
NL6508554A (en) 1966-01-04
DE1233828B (en) 1967-02-09
BE666309A (en) 1966-01-03
US3488157A (en) 1970-01-06

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