JPS57188497A - Container for pulling up silicon single crystal - Google Patents

Container for pulling up silicon single crystal

Info

Publication number
JPS57188497A
JPS57188497A JP7047681A JP7047681A JPS57188497A JP S57188497 A JPS57188497 A JP S57188497A JP 7047681 A JP7047681 A JP 7047681A JP 7047681 A JP7047681 A JP 7047681A JP S57188497 A JPS57188497 A JP S57188497A
Authority
JP
Japan
Prior art keywords
single crystal
container
silicon nitride
molten
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7047681A
Other languages
Japanese (ja)
Other versions
JPS5950626B2 (en
Inventor
Yukitoshi Matsuo
Yasuhiro Imanishi
Hideo Nagashima
Masaharu Watanabe
Toshiro Usami
Hisashi Muraoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd, Toshiba Ceramics Co Ltd filed Critical Toshiba Corp
Priority to JP7047681A priority Critical patent/JPS5950626B2/en
Priority to US06/368,440 priority patent/US4515755A/en
Priority to DE8282103457T priority patent/DE3280107D1/en
Priority to EP82103457A priority patent/EP0065122B1/en
Publication of JPS57188497A publication Critical patent/JPS57188497A/en
Publication of JPS5950626B2 publication Critical patent/JPS5950626B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To obtain the titled container capable of pulling up a high purity Si single crystal by regulating the Fe and Cu contents of a silicon nitride substrate to prescribed values or below, prescribing the porosity, and coating the face of the substrate contacting with molten Si with a silicon nitride film deposited from a gaseous phase.
CONSTITUTION: A container used to pull up and Si single crystal from molten Si is manufactured by coating the face of a sintered silicon nitride substrate contacting with the molten Si with a silicon nitride film deposited from a gaseous phase. The amounts of Fe and Cu contained in the substrate are prescribed to ≤250ppm and ≤50ppm, respectively, and the porosity of the substrate is specified to 10W40%. This container for pulling up an Si single crystal prevents impurities from entering molten Si from the silicon nitride. Accordingly, using the container a high purity fine Si single crystal with a very low oxygen concn. such as ≤2×1016atom/cm3 can be pulled up.
COPYRIGHT: (C)1982,JPO&Japio
JP7047681A 1981-05-11 1981-05-11 Container for pulling silicon single crystals Expired JPS5950626B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP7047681A JPS5950626B2 (en) 1981-05-11 1981-05-11 Container for pulling silicon single crystals
US06/368,440 US4515755A (en) 1981-05-11 1982-04-14 Apparatus for producing a silicon single crystal from a silicon melt
DE8282103457T DE3280107D1 (en) 1981-05-11 1982-04-23 DEVICE PART FROM SILICON NITRIDE FOR DRAWING SINGLE CRYSTALLINE SILICON AND METHOD FOR THE PRODUCTION THEREOF.
EP82103457A EP0065122B1 (en) 1981-05-11 1982-04-23 Device made of silicon nitride for pulling single crystal of silicon and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7047681A JPS5950626B2 (en) 1981-05-11 1981-05-11 Container for pulling silicon single crystals

Publications (2)

Publication Number Publication Date
JPS57188497A true JPS57188497A (en) 1982-11-19
JPS5950626B2 JPS5950626B2 (en) 1984-12-10

Family

ID=13432610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7047681A Expired JPS5950626B2 (en) 1981-05-11 1981-05-11 Container for pulling silicon single crystals

Country Status (1)

Country Link
JP (1) JPS5950626B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59162199A (en) * 1982-12-23 1984-09-13 テキサス・インスツルメンツ・インコ−ポレイテツド Crystal growth using silicon nitride and manufacture of parts therefor
JPH0562869A (en) * 1991-08-30 1993-03-12 Shin Etsu Chem Co Ltd Manufacture of high-integration-level memory structure
JP2005535552A (en) * 2002-08-15 2005-11-24 クルジン アクシエル スカプ Silicon nitride molded part and method for producing the molded part

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63139611A (en) * 1986-12-01 1988-06-11 Niigata Eng Co Ltd Rotary chuck device for long material machining cutting device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59162199A (en) * 1982-12-23 1984-09-13 テキサス・インスツルメンツ・インコ−ポレイテツド Crystal growth using silicon nitride and manufacture of parts therefor
JPH0562869A (en) * 1991-08-30 1993-03-12 Shin Etsu Chem Co Ltd Manufacture of high-integration-level memory structure
JP2005535552A (en) * 2002-08-15 2005-11-24 クルジン アクシエル スカプ Silicon nitride molded part and method for producing the molded part
JP4724419B2 (en) * 2002-08-15 2011-07-13 クルジン アクシエル スカプ Silicon nitride molded part and method for producing the molded part

Also Published As

Publication number Publication date
JPS5950626B2 (en) 1984-12-10

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