JPS57188497A - Container for pulling up silicon single crystal - Google Patents
Container for pulling up silicon single crystalInfo
- Publication number
- JPS57188497A JPS57188497A JP7047681A JP7047681A JPS57188497A JP S57188497 A JPS57188497 A JP S57188497A JP 7047681 A JP7047681 A JP 7047681A JP 7047681 A JP7047681 A JP 7047681A JP S57188497 A JPS57188497 A JP S57188497A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- container
- silicon nitride
- molten
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain the titled container capable of pulling up a high purity Si single crystal by regulating the Fe and Cu contents of a silicon nitride substrate to prescribed values or below, prescribing the porosity, and coating the face of the substrate contacting with molten Si with a silicon nitride film deposited from a gaseous phase.
CONSTITUTION: A container used to pull up and Si single crystal from molten Si is manufactured by coating the face of a sintered silicon nitride substrate contacting with the molten Si with a silicon nitride film deposited from a gaseous phase. The amounts of Fe and Cu contained in the substrate are prescribed to ≤250ppm and ≤50ppm, respectively, and the porosity of the substrate is specified to 10W40%. This container for pulling up an Si single crystal prevents impurities from entering molten Si from the silicon nitride. Accordingly, using the container a high purity fine Si single crystal with a very low oxygen concn. such as ≤2×1016atom/cm3 can be pulled up.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7047681A JPS5950626B2 (en) | 1981-05-11 | 1981-05-11 | Container for pulling silicon single crystals |
US06/368,440 US4515755A (en) | 1981-05-11 | 1982-04-14 | Apparatus for producing a silicon single crystal from a silicon melt |
DE8282103457T DE3280107D1 (en) | 1981-05-11 | 1982-04-23 | DEVICE PART FROM SILICON NITRIDE FOR DRAWING SINGLE CRYSTALLINE SILICON AND METHOD FOR THE PRODUCTION THEREOF. |
EP82103457A EP0065122B1 (en) | 1981-05-11 | 1982-04-23 | Device made of silicon nitride for pulling single crystal of silicon and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7047681A JPS5950626B2 (en) | 1981-05-11 | 1981-05-11 | Container for pulling silicon single crystals |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57188497A true JPS57188497A (en) | 1982-11-19 |
JPS5950626B2 JPS5950626B2 (en) | 1984-12-10 |
Family
ID=13432610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7047681A Expired JPS5950626B2 (en) | 1981-05-11 | 1981-05-11 | Container for pulling silicon single crystals |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5950626B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59162199A (en) * | 1982-12-23 | 1984-09-13 | テキサス・インスツルメンツ・インコ−ポレイテツド | Crystal growth using silicon nitride and manufacture of parts therefor |
JPH0562869A (en) * | 1991-08-30 | 1993-03-12 | Shin Etsu Chem Co Ltd | Manufacture of high-integration-level memory structure |
JP2005535552A (en) * | 2002-08-15 | 2005-11-24 | クルジン アクシエル スカプ | Silicon nitride molded part and method for producing the molded part |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63139611A (en) * | 1986-12-01 | 1988-06-11 | Niigata Eng Co Ltd | Rotary chuck device for long material machining cutting device |
-
1981
- 1981-05-11 JP JP7047681A patent/JPS5950626B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59162199A (en) * | 1982-12-23 | 1984-09-13 | テキサス・インスツルメンツ・インコ−ポレイテツド | Crystal growth using silicon nitride and manufacture of parts therefor |
JPH0562869A (en) * | 1991-08-30 | 1993-03-12 | Shin Etsu Chem Co Ltd | Manufacture of high-integration-level memory structure |
JP2005535552A (en) * | 2002-08-15 | 2005-11-24 | クルジン アクシエル スカプ | Silicon nitride molded part and method for producing the molded part |
JP4724419B2 (en) * | 2002-08-15 | 2011-07-13 | クルジン アクシエル スカプ | Silicon nitride molded part and method for producing the molded part |
Also Published As
Publication number | Publication date |
---|---|
JPS5950626B2 (en) | 1984-12-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5587444A (en) | Method of forming insulating film on semiconductor surface | |
MY107784A (en) | Method for growing multiple single crystals and apparatus for use therein | |
JPS5792591A (en) | Production of single crystal | |
JPS57188497A (en) | Container for pulling up silicon single crystal | |
JPS54157779A (en) | Production of silicon single crystal | |
JPS56160400A (en) | Growing method for gallium nitride | |
JPS57188498A (en) | Quartz crucible for pulling up silicon single crystal | |
JPS57188495A (en) | High density silicon nitride-base container for pulling up silicon single crystal | |
JPS57160992A (en) | Container for growing silicon single crystal | |
JPS52138095A (en) | Growth of sapphire single crystal | |
JPS57188496A (en) | High density silicon nitride-base container for pulling up silicon single crystal | |
JPS5751192A (en) | Preparation of single crystal of compound semiconductor having high decomposition pressure | |
JPS5771894A (en) | Preparation of single crystal of semiconductor | |
JPS57155346A (en) | Fe-si sintered alloy | |
JPS54141389A (en) | Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible | |
JPS56100196A (en) | Preventing method for harmful matter from mixing into molten crystal material in growth of crystal by pulling | |
JPS57188500A (en) | Manufacturing apparatus for crystal of 3-5 group compound semiconductor | |
JPS5562782A (en) | Preparation of znse-gaas photoelectric converting element | |
JPS5316391A (en) | Method and apparatus for growing single crystalline alumina at gaseous phase | |
JPS5777093A (en) | Synthesizing method for compound semiconductor | |
Bakin et al. | Crystals of Pb sub 1--x Sn sub x Te Grown From the Gas Phase | |
JPS5678496A (en) | Quartz glass crucible for pulling silicon single crystal | |
JPS5399881A (en) | Manufacture of dielectric separation substrate | |
JPS56114900A (en) | Preparation of insb single crystal | |
JPS55109293A (en) | Production of semiconductor crystal of group 3-5 compound |