JPS57188498A - Quartz crucible for pulling up silicon single crystal - Google Patents

Quartz crucible for pulling up silicon single crystal

Info

Publication number
JPS57188498A
JPS57188498A JP7233581A JP7233581A JPS57188498A JP S57188498 A JPS57188498 A JP S57188498A JP 7233581 A JP7233581 A JP 7233581A JP 7233581 A JP7233581 A JP 7233581A JP S57188498 A JPS57188498 A JP S57188498A
Authority
JP
Japan
Prior art keywords
single crystal
film
crucible
pulling
quartz crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7233581A
Other languages
Japanese (ja)
Inventor
Hideyasu Matsuo
Yasuhiro Imanishi
Tatsuo Nozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP7233581A priority Critical patent/JPS57188498A/en
Publication of JPS57188498A publication Critical patent/JPS57188498A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

PURPOSE: To obtain an Si single crystal with few defects in the crystal structure in a high yield by coating the surface of a quartz crucible used in a device for pulling up an si single crystal with a silicon nitride film to prevent chips of quartz glass from peeling off the crucible.
CONSTITUTION: A quartz crucible 12 for pulling up an Si single crystal is manufactured by coating the inner wall 2a of an ordinary quartz crucible 2 with a high purity dense silicon nitride film 19 by vapor deposition. By regulating the thickness of the film 19 to ≤0.5μm, the amount of suspended foreign matter is reduced when an Si single crystal is pulled up, and the single crystal yield is enhanced considerably. The effect of the film 19 is independent to the crystalline or amorphous state. The crucible 2 is mounted on a support stand 18 in a quartz reaction tube 14, and the deposition of the film 19 is carried out while rotating the stand 18 so as to make the film 19 uniform. The deposition is carried out at 950W1,350°C under low pressure in an atmosphere contg. SiCl4, H2 and NH3.
COPYRIGHT: (C)1982,JPO&Japio
JP7233581A 1981-05-15 1981-05-15 Quartz crucible for pulling up silicon single crystal Pending JPS57188498A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7233581A JPS57188498A (en) 1981-05-15 1981-05-15 Quartz crucible for pulling up silicon single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7233581A JPS57188498A (en) 1981-05-15 1981-05-15 Quartz crucible for pulling up silicon single crystal

Publications (1)

Publication Number Publication Date
JPS57188498A true JPS57188498A (en) 1982-11-19

Family

ID=13486312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7233581A Pending JPS57188498A (en) 1981-05-15 1981-05-15 Quartz crucible for pulling up silicon single crystal

Country Status (1)

Country Link
JP (1) JPS57188498A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58161991A (en) * 1982-03-17 1983-09-26 Toshiba Corp Production of molding of semiconductor blank material
JPS59217700A (en) * 1983-05-20 1984-12-07 Sumitomo Electric Ind Ltd Device for producing compound semiconductor and method for manufacturing thereof
JPS59227800A (en) * 1983-05-20 1984-12-21 Sumitomo Electric Ind Ltd Member for producing compound semiconductor
JPS6143274U (en) * 1984-08-20 1986-03-20 科学技術庁無機材質研究所長 Single crystal growth equipment
JPH01112450U (en) * 1988-01-22 1989-07-28
KR20030050334A (en) * 2001-12-18 2003-06-25 주식회사 실트론 Apparatus of growing a single silicon ingot
KR20030052467A (en) * 2001-12-21 2003-06-27 주식회사 실트론 Graphite Crucible
JP2006124230A (en) * 2004-10-28 2006-05-18 Tosoh Quartz Corp Vessel for melting silicon
JP2007534590A (en) * 2004-04-29 2007-11-29 ベスビウス クルーシブル カンパニー Silicon crystallization crucible

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58161991A (en) * 1982-03-17 1983-09-26 Toshiba Corp Production of molding of semiconductor blank material
JPH0329750B2 (en) * 1982-03-17 1991-04-25
JPS59217700A (en) * 1983-05-20 1984-12-07 Sumitomo Electric Ind Ltd Device for producing compound semiconductor and method for manufacturing thereof
JPS59227800A (en) * 1983-05-20 1984-12-21 Sumitomo Electric Ind Ltd Member for producing compound semiconductor
JPS6143274U (en) * 1984-08-20 1986-03-20 科学技術庁無機材質研究所長 Single crystal growth equipment
JPH0410224Y2 (en) * 1984-08-20 1992-03-13
JPH01112450U (en) * 1988-01-22 1989-07-28
KR20030050334A (en) * 2001-12-18 2003-06-25 주식회사 실트론 Apparatus of growing a single silicon ingot
KR20030052467A (en) * 2001-12-21 2003-06-27 주식회사 실트론 Graphite Crucible
JP2007534590A (en) * 2004-04-29 2007-11-29 ベスビウス クルーシブル カンパニー Silicon crystallization crucible
JP2006124230A (en) * 2004-10-28 2006-05-18 Tosoh Quartz Corp Vessel for melting silicon
JP4712347B2 (en) * 2004-10-28 2011-06-29 東ソー・クォーツ株式会社 Silicon melting container

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