JPS57159015A - Film growing device - Google Patents

Film growing device

Info

Publication number
JPS57159015A
JPS57159015A JP4458481A JP4458481A JPS57159015A JP S57159015 A JPS57159015 A JP S57159015A JP 4458481 A JP4458481 A JP 4458481A JP 4458481 A JP4458481 A JP 4458481A JP S57159015 A JPS57159015 A JP S57159015A
Authority
JP
Japan
Prior art keywords
tube
quartz
reaction tube
filled
stainless steel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4458481A
Other languages
Japanese (ja)
Inventor
Yasuhiko Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4458481A priority Critical patent/JPS57159015A/en
Publication of JPS57159015A publication Critical patent/JPS57159015A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To enable reduced pressure vapor phase growth in a quartz reaction tube which can be readily cleaned by enabling to remove only the inside quartz reaction tube having double reaction tube structure. CONSTITUTION:A semiconductor vwafer 1 is stood on a quartz boat 2, and is filled in the inside quartz reaction tube 3. Temperature is adjusted by a heater 4, and the pressure is reduced by an evacuation pump 5. The reduced pressure state is maintained by a quartz furnace core tube 6, a stainless steel front cap 7 and a stainless steel end cap 9. When reaction gas is filled from a gas guide tube 11, a desired thin film is formed on the surface of the wafer 1. Such a film growth is repeated to produce a crack at the thin film thus formed thickly on the inner wall of the tube 3, and an exit 8 of the boat 2 is opened before it falls, and only the tube 3 is pulled out, and is cleaned.
JP4458481A 1981-03-26 1981-03-26 Film growing device Pending JPS57159015A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4458481A JPS57159015A (en) 1981-03-26 1981-03-26 Film growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4458481A JPS57159015A (en) 1981-03-26 1981-03-26 Film growing device

Publications (1)

Publication Number Publication Date
JPS57159015A true JPS57159015A (en) 1982-10-01

Family

ID=12695528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4458481A Pending JPS57159015A (en) 1981-03-26 1981-03-26 Film growing device

Country Status (1)

Country Link
JP (1) JPS57159015A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0143697A2 (en) * 1983-11-16 1985-06-05 B T U Engineering Corporation Modular V-CVD diffusion furnace
JPS61121734U (en) * 1985-01-18 1986-07-31
JPH04180619A (en) * 1990-11-15 1992-06-26 Nec Yamagata Ltd Horizontal type reactor for semiconductor manufacturing
US6294228B1 (en) 1998-11-04 2001-09-25 Nec Corporation Method for forming thin films

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5398775A (en) * 1977-02-09 1978-08-29 Hitachi Ltd Gas phase growth unit
JPS55110033A (en) * 1979-02-19 1980-08-25 Fujitsu Ltd Epitaxial layer-growing device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5398775A (en) * 1977-02-09 1978-08-29 Hitachi Ltd Gas phase growth unit
JPS55110033A (en) * 1979-02-19 1980-08-25 Fujitsu Ltd Epitaxial layer-growing device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0143697A2 (en) * 1983-11-16 1985-06-05 B T U Engineering Corporation Modular V-CVD diffusion furnace
EP0143697A3 (en) * 1983-11-16 1987-07-15 B T U Engineering Corporation Modular v-cvd diffusion furnace
JPS61121734U (en) * 1985-01-18 1986-07-31
JPH0539624Y2 (en) * 1985-01-18 1993-10-07
JPH04180619A (en) * 1990-11-15 1992-06-26 Nec Yamagata Ltd Horizontal type reactor for semiconductor manufacturing
US6294228B1 (en) 1998-11-04 2001-09-25 Nec Corporation Method for forming thin films

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