JPS5571616A - Vapor phase growing treatment method - Google Patents
Vapor phase growing treatment methodInfo
- Publication number
- JPS5571616A JPS5571616A JP14309978A JP14309978A JPS5571616A JP S5571616 A JPS5571616 A JP S5571616A JP 14309978 A JP14309978 A JP 14309978A JP 14309978 A JP14309978 A JP 14309978A JP S5571616 A JPS5571616 A JP S5571616A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- film
- heating element
- vapor phase
- phase growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To form a uniform-thickness film on the inside of a reaction tube with a simple device by heating the outside of the tube with a heating element moving along the longitudinal direction while feeding a desired film forming gas into the tube. CONSTITUTION:The vapor phase growing device is composed of reaction tube 31 made of quartz or silicon carbide, heating element 37, heating element support 38, driving unit 40, rotary shaft 41, etc. Tube 31 is evacuated with an exhaust unit and heated by moving element 37 along the outside of tube 31 in the longitudinal direction by the action of unit 40, shaft 41, support 38, etc. while feeding a desired reaction gas from gas source 34 through valve 33, thereby uniformly forming a silicon dioxide film, a silicon nitride film, a phosphosilicate glass film, a polycrystal silicon film, or other film on the inside of tube 31.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14309978A JPS5571616A (en) | 1978-11-20 | 1978-11-20 | Vapor phase growing treatment method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14309978A JPS5571616A (en) | 1978-11-20 | 1978-11-20 | Vapor phase growing treatment method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5571616A true JPS5571616A (en) | 1980-05-29 |
Family
ID=15330880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14309978A Pending JPS5571616A (en) | 1978-11-20 | 1978-11-20 | Vapor phase growing treatment method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5571616A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6390828U (en) * | 1986-12-03 | 1988-06-13 | ||
KR100864258B1 (en) * | 2007-02-27 | 2008-10-17 | (주)지원테크 | Method of cleaning glassy material product and cleaning apparatus for glassy material product |
-
1978
- 1978-11-20 JP JP14309978A patent/JPS5571616A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6390828U (en) * | 1986-12-03 | 1988-06-13 | ||
KR100864258B1 (en) * | 2007-02-27 | 2008-10-17 | (주)지원테크 | Method of cleaning glassy material product and cleaning apparatus for glassy material product |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT1234946B (en) | Impurity diffusion for semiconductor substrate mfr. | |
JPS5137915B2 (en) | ||
JPS5571616A (en) | Vapor phase growing treatment method | |
JPS5694751A (en) | Vapor growth method | |
GB979467A (en) | Improvements in or relating to methods of coating a molybdenum wire with a layer of carbon | |
JPS5275177A (en) | Vapor growth device | |
JPS5398775A (en) | Gas phase growth unit | |
JPS5623736A (en) | Vapor phase growing method | |
JPS51118104A (en) | Pumping apparatus | |
JPS5350844A (en) | Heating roller | |
JPS5713746A (en) | Vapor-phase growing apparatus | |
JPS57159015A (en) | Film growing device | |
GB1031833A (en) | Process for treating tungsten | |
JPS5275176A (en) | Method for vapor phase epitaxial growth | |
JPS55136199A (en) | Vapor phase growing method for magnesia spinel | |
JPS5251133A (en) | High-frequency heating device | |
JPS54139482A (en) | Manufacture of semiconductor device | |
JPS537171A (en) | Vapor phase growth apparatus | |
JPS56120600A (en) | Vapor phase growing method | |
JPS5666029A (en) | Manufacture of silicon semiconductor device | |
JPS5656640A (en) | Device for vapor phase growth | |
KRAVCHENKO et al. | Growth kinetics and morphology of autoepitaxial germanium films in the chloride method(Flow velocity, GeCl 4 concentration, and temperature effects on growth and morphology of autoepitaxial Ge films) | |
JPS57157530A (en) | Forming method for insulator thin-film | |
JPS572527A (en) | Reduced-pressure vapor phase growing apparatus | |
JPS57132543A (en) | Horizontal type reaction tube with rotary type sample holding and heating table |